J. Stephen

490 total citations
34 papers, 327 citations indexed

About

J. Stephen is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Pulmonary and Respiratory Medicine. According to data from OpenAlex, J. Stephen has authored 34 papers receiving a total of 327 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 7 papers in Hardware and Architecture and 6 papers in Pulmonary and Respiratory Medicine. Recurrent topics in J. Stephen's work include Radiation Effects in Electronics (14 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Silicon and Solar Cell Technologies (8 papers). J. Stephen is often cited by papers focused on Radiation Effects in Electronics (14 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Silicon and Solar Cell Technologies (8 papers). J. Stephen collaborates with scholars based in United Kingdom, Netherlands and United States. J. Stephen's co-authors include D. Mapper, C. S. Dyer, Andrew Sims, R. Harboe-Sørensen, L. Adams, G.A. Gard, I.M. Buckley-Golder, M.R. Hayns, P. G. LeComber and R.C. Piller and has published in prestigious journals such as Nature, Journal of Physics Condensed Matter and Electronics Letters.

In The Last Decade

J. Stephen

33 papers receiving 295 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Stephen United Kingdom 11 219 104 54 52 38 34 327
G. Farrell United Kingdom 13 221 1.0× 113 1.1× 102 1.9× 31 0.6× 75 2.0× 26 397
Thierry Nuns France 15 423 1.9× 38 0.4× 69 1.3× 34 0.7× 24 0.6× 50 483
M. Huhtinen Switzerland 13 434 2.0× 116 1.1× 250 4.6× 28 0.5× 41 1.1× 32 646
L.J. Lorence United States 9 164 0.7× 77 0.7× 92 1.7× 20 0.4× 15 0.4× 27 285
D.E. Beutler United States 10 260 1.2× 67 0.6× 97 1.8× 17 0.3× 16 0.4× 26 370
M. Muschitiello Netherlands 12 375 1.7× 20 0.2× 40 0.7× 38 0.7× 23 0.6× 46 426
Mikko Rossi Finland 9 185 0.8× 58 0.6× 62 1.1× 22 0.4× 33 0.9× 24 270
G. J. Brucker United States 16 564 2.6× 73 0.7× 163 3.0× 45 0.9× 19 0.5× 83 724
G. Parrini Italy 10 93 0.4× 133 1.3× 70 1.3× 8 0.2× 83 2.2× 36 343
I. Riihimäki Finland 11 236 1.1× 75 0.7× 66 1.2× 18 0.3× 45 1.2× 27 344

Countries citing papers authored by J. Stephen

Since Specialization
Citations

This map shows the geographic impact of J. Stephen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Stephen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Stephen more than expected).

Fields of papers citing papers by J. Stephen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Stephen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Stephen. The network helps show where J. Stephen may publish in the future.

Co-authorship network of co-authors of J. Stephen

This figure shows the co-authorship network connecting the top 25 collaborators of J. Stephen. A scholar is included among the top collaborators of J. Stephen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Stephen. J. Stephen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Stephen, J., et al.. (1992). Dielectric dispersions in pentakis methyl ammonium bismuthate single crystals. I. (CH3NH3)5Bi2Br11. Journal of Physics Condensed Matter. 4(10). 2687–2694. 18 indexed citations
2.
Dyer, C. S., et al.. (1991). Radiation environment measurements and single event upset observations in sun-synchronous orbit. IEEE Transactions on Nuclear Science. 38(6). 1700–1707. 11 indexed citations
3.
Dyer, C. S., et al.. (1990). Measurements of solar flare enhancements to the single event upset environment in the upper atmosphere (avionics). IEEE Transactions on Nuclear Science. 37(6). 1929–1937. 26 indexed citations
4.
Dyer, C. S., et al.. (1989). The cosmic radiation effects and activation monitor. AIP conference proceedings. 186. 343–349. 2 indexed citations
5.
Dyer, C. S., et al.. (1988). The cosmic radiation effects and activation monitor. OpenGrey (Institut de l'Information Scientifique et Technique). 90. 13318. 1 indexed citations
6.
Mapper, D., et al.. (1987). The Effects of Total Dose on the SEU Sensitivity of CMOS Static RAMs. 2 indexed citations
7.
Mapper, D., et al.. (1987). SEU Measurements Using 252Cf Fission Particles, on CMOS Static RAMs, Subjected to a Continuous Period of Low Dose Rate 60Co Irradiation. IEEE Transactions on Nuclear Science. 34(6). 1287–1291. 3 indexed citations
8.
Stephen, J.. (1986). Low Noise Junction Field Effect Transistors Exposed to Intense Ionizing Radiation. IEEE Transactions on Nuclear Science. 33(6). 1465–1470. 13 indexed citations
9.
Stephen, J., et al.. (1984). Investigation of Heavy Particle Induced Latch-Up, Using a Californium-252 Source, in CMOS SRAMs and PROMs. IEEE Transactions on Nuclear Science. 31(6). 1207–1211. 9 indexed citations
10.
French, I. D., A.J. Snell, P. G. LeComber, & J. Stephen. (1983). The effect of?-irradiation on amorphous silicon field effect transistors. Applied Physics A. 31(1). 19–22. 20 indexed citations
11.
Stephen, J., et al.. (1983). Cosmic Ray Simulation Experiments for the Study of Single Event Upsets and Latch-Up in CMOS Memories. IEEE Transactions on Nuclear Science. 30(6). 4464–4469. 28 indexed citations
12.
Stephen, J., et al.. (1979). Pulsed laser annealing of ion implanted silicon. AIP conference proceedings. 50. 337–343. 1 indexed citations
13.
Stephen, J., et al.. (1977). A fully automated technique for the rapid assessment of uniformity of doped layers by the four point probe method. Revue de Physique Appliquée. 12(3). 493–501. 2 indexed citations
14.
Stephen, J., et al.. (1977). The effect of argon implantation on the conductivity of boron implanted silicon. Solid-State Electronics. 20(8). 703–707. 10 indexed citations
15.
Stephen, J., et al.. (1975). Doping centres in partially annealed carbon implanted silicon. Radiation Effects. 26(1-2). 17–21. 2 indexed citations
16.
Nicholas, K. H., et al.. (1972). The evaluation of the Harwell-Lintott industrial ion implantation machine by making silicon planar resistors. Journal of Physics E Scientific Instruments. 5(4). 309–310. 4 indexed citations
17.
Stephen, J.. (1972). Ion implantation in semiconductor device technology. Radio and Electronic Engineer. 42(6). 265–265. 8 indexed citations
18.
Stephen, J., et al.. (1972). Computer calculations of sheet resistance of n- and p-type implantations in silicon. Radiation Effects. 14(3-4). 181–184. 12 indexed citations
19.
Stephen, J., et al.. (1956). A transistor digital computer. ˜The œproceedings of the Institution of Electrical Engineers. Part B, Radio and electronic engineering, including communication engineering. 103(3S). 364–370. 2 indexed citations
20.
Stephen, J., et al.. (1954). Irradiation of Transistors. Nature. 173(4400). 397–398. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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