J. R. Engstrom

2.8k total citations
96 papers, 2.5k citations indexed

About

J. R. Engstrom is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. R. Engstrom has authored 96 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 41 papers in Materials Chemistry and 38 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. R. Engstrom's work include Semiconductor materials and devices (46 papers), Molecular Junctions and Nanostructures (26 papers) and Advanced Chemical Physics Studies (18 papers). J. R. Engstrom is often cited by papers focused on Semiconductor materials and devices (46 papers), Molecular Junctions and Nanostructures (26 papers) and Advanced Chemical Physics Studies (18 papers). J. R. Engstrom collaborates with scholars based in United States, United Kingdom and Taiwan. J. R. Engstrom's co-authors include Thomas Engel, W. H. Weinberg, Li-Qun Xia, Kevin J. Hughes, D. J. Bonser, Mark Nelson, Arthur R. Woll, D. Wayne Goodman, Niladri Maity and Mark Jones and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and The Journal of Chemical Physics.

In The Last Decade

J. R. Engstrom

95 papers receiving 2.4k citations

Peers

Countries citing papers authored by J. R. Engstrom

Since Specialization

Citations

This map shows the geographic impact of J. R. Engstrom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. R. Engstrom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. R. Engstrom more than expected).

Fields of papers citing papers by J. R. Engstrom

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. R. Engstrom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. R. Engstrom. The network helps show where J. R. Engstrom may publish in the future.

Co-authorship network of co-authors of J. R. Engstrom

This figure shows the co-authorship network connecting the top 25 collaborators of J. R. Engstrom. A scholar is included among the top collaborators of J. R. Engstrom based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. R. Engstrom. J. R. Engstrom is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces 2024 ·ACS Applied Materials & Interfaces ·(unknown), (unknown), (unknown), J. R. Engstrom	0
2	Competitive Adsorption as a Route to Area-Selective Deposition 2020 ·ACS Applied Materials & Interfaces ·(unknown), Yan Yang, (unknown), Ka Un Lao, Hsin-Yu Ko, Jonathan W.C. Wong, Robert A. DiStasio, J. R. Engstrom	23
3	Area-selective atomic layer deposition enabled by competitive adsorption 2020 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), Yan Yang, Hae Won Sohn, Robert A. DiStasio, J. R. Engstrom	15
4	Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching 2017 ·The Journal of Chemical Physics ·J. R. Engstrom, Andrew C. Kummel	2
5	Unexpected Effects of the Rate of Deposition on the Mode of Growth and Morphology of Thin Films of Tetracene Grown on SiO₂ 2016 ·The Journal of Physical Chemistry C ·(unknown), J. R. Engstrom	12
6	Initial Stages of Atomic Layer Deposition of Tantalum Nitride on SiO₂ and Porous Low-κ Substrates Modified by a Branched Interfacial Organic Layer: Chemisorption and the Transition to Steady-State Growth 2012 ·The Journal of Physical Chemistry C ·Kevin J. Hughes, Abhishek Dube, Manish Sharma, J. R. Engstrom	3
7	Thin Film Growth of Pentacene on Polymeric Dielectrics: Unexpected Changes in the Evolution of Surface Morphology with Substrate 2012 ·The Journal of Physical Chemistry C ·(unknown), Arthur R. Woll, J. R. Engstrom	19
8	Hyperthermal organic thin film growth on surfaces terminated with self-assembled monolayers. I. The dynamics of trapping 2011 ·The Journal of Chemical Physics ·(unknown), Sukwon Hong, Arthur R. Woll, Kevin J. Hughes, Ananth P. Kaushik, Paulette Clancy, J. R. Engstrom	15
9	Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage 2011 ·Journal of the American Chemical Society ·Joshua J. Choi, Clive Bealing, Kaifu Bian, Kevin J. Hughes, (unknown), Detlef‐M. Smilgies, Richard G. Hennig, J. R. Engstrom, Tobias Hanrath	198
10	Effects of Interfacial Organic Layers on Nucleation, Growth, and Morphological Evolution in Atomic Layer Thin Film Deposition 2007 ·The Journal of Physical Chemistry C ·Abhishek Dube, Manish Sharma, Frédéric Paul, Peter Ercius, David A. Muller, J. R. Engstrom	32
11	A surface modification strategy on silicon nitride for developing biosensors 2005 ·Analytical Biochemistry ·(unknown), Dacheng Ren, J. R. Engstrom, Kelvin H. Lee	69
12	The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing −OH, −NH₂, and −CH₃ Terminal Groups 2005 ·Journal of the American Chemical Society ·(unknown), Frédéric Paul, J. R. Engstrom	62
13	The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition 2004 ·Journal of Applied Physics ·(unknown), J. R. Engstrom	3
14	Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane 2002 ·Applied Physics Letters ·(unknown), (unknown), J. R. Engstrom	11
15	A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition 1998 ·Surface Science ·(unknown), J. R. Engstrom, Paulette Clancy	44
16	Gas—surface reactivity in mixed-crystal systems: the reaction of GeH4 and Ge2H6 on Si surfaces 1997 ·Surface Science ·(unknown), Dan Zheng, J. R. Engstrom	19
17	Supersonic molecular beam scattering as a probe of thin film deposition processes 1995 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Li-Qun Xia, Mark Jones, Niladri Maity, J. R. Engstrom	53
18	Dynamics of the dissociative adsorption of disilane on Si(100): Energy scaling and the effect of corrugation 1993 ·The Journal of Chemical Physics ·J. R. Engstrom, David A. Hansen, (unknown), Li-Qun Xia	40
19	The reaction of atomic oxygen with Si(100) and Si(111) 1991 ·Surface Science ·J. R. Engstrom, D. J. Bonser, Mark Nelson, Thomas Engel	111
20	Analysis of gas–surface reactions by surface temperature modulation: Theoretical formulation 1987 ·The Journal of Chemical Physics ·J. R. Engstrom, W. H. Weinberg	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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