J. H. Lee

1.1k total citations
21 papers, 483 citations indexed

About

J. H. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, J. H. Lee has authored 21 papers receiving a total of 483 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in J. H. Lee's work include Semiconductor materials and devices (11 papers), Electronic and Structural Properties of Oxides (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). J. H. Lee is often cited by papers focused on Semiconductor materials and devices (11 papers), Electronic and Structural Properties of Oxides (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). J. H. Lee collaborates with scholars based in South Korea, United States and Russia. J. H. Lee's co-authors include N. I. Lee, Dae‐Hong Ko, K. Fujihara, M.-H. Cho, C. N. Whang, Sahn Nahm, Youngchae Roh, K. Jeong, D. Kim and Kyu‐Hyuck Chung and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

J. H. Lee

19 papers receiving 474 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. H. Lee South Korea	8	440	199	77	25	25	21	483
Xiaolong Wang China	11	157 0.4×	290 1.5×	28 0.4×	13 0.5×	39 1.6×	22	338
V.F. Drobny United States	7	217 0.5×	207 1.0×	51 0.7×	23 0.9×	17 0.7×	19	361
Dongyang Liu China	7	347 0.8×	113 0.6×	38 0.5×	24 1.0×	11 0.4×	22	400
Anne Marie Z. Tan United States	13	138 0.3×	281 1.4×	31 0.4×	56 2.2×	23 0.9×	18	329
P.J. Ribeyron France	14	508 1.2×	248 1.2×	184 2.4×	14 0.6×	14 0.6×	47	552
Francesco Pattini Italy	14	430 1.0×	425 2.1×	41 0.5×	9 0.4×	43 1.7×	32	514
Corinna Grosse Germany	10	160 0.4×	269 1.4×	35 0.5×	27 1.1×	69 2.8×	30	324
Donghyi Koh United States	8	200 0.5×	105 0.5×	39 0.5×	9 0.4×	32 1.3×	17	250
Tomomasa Ueda Japan	11	256 0.6×	164 0.8×	45 0.6×	43 1.7×	28 1.1×	21	343
Yusaku Kashiwagi Japan	10	268 0.6×	247 1.2×	62 0.8×	23 0.9×	35 1.4×	19	352

Countries citing papers authored by J. H. Lee

Since Specialization

Citations

This map shows the geographic impact of J. H. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. H. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. H. Lee more than expected).

Fields of papers citing papers by J. H. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. H. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. H. Lee. The network helps show where J. H. Lee may publish in the future.

Co-authorship network of co-authors of J. H. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of J. H. Lee. A scholar is included among the top collaborators of J. H. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. H. Lee. J. H. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hwang, Taewon, Su‐Hwan Choi, Kie Moon Song, et al.. (2025). Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing. Materials Science in Semiconductor Processing. 191. 109380–109380.

Choi, Su‐Hwan, et al.. (2025). Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume. International Journal of Extreme Manufacturing. 7(5). 55503–55503.

Min, Kyung-Hwan, Soo‐Min Lee, J. H. Lee, et al.. (2024). A 20Gb/s/pin Single-Ended PAM-4 Transceiver with Pre/Post-Channel Switching Jitter Compensation and DQS-Driven Biasing for Low-Power Memory Interfaces. 1–2. 3 indexed citations

Min, Kyung-Hwan, Soo‐Min Lee, J. H. Lee, et al.. (2024). An 8-nm 20-Gb/s/pin Single-Ended PAM-4 Transceiver With Pre/Post-Channel Switching Jitter Compensation and DQS-Driven Biasing. IEEE Solid-State Circuits Letters. 7. 319–322. 1 indexed citations

Lee, Soo‐Min, Kyung-Hwan Min, J. H. Lee, et al.. (2023). A 4-nm 16-Gb/s/pin Single-Ended PAM-4 Parallel Transceiver With Switching-Jitter Compensation and Transmitter Optimization. IEEE Journal of Solid-State Circuits. 59(1). 184–195. 7 indexed citations

Sato, H., Hoeryong Jung, Hagyoul Bae, et al.. (2023). Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM. 1–5. 1 indexed citations

Lee, J. H., et al.. (2016). Assessing mechanical properties of the dissimilar metal welding between P92 steels and alloy 617 at high temperature. Journal of Mechanical Science and Technology. 30(10). 4453–4457. 21 indexed citations

Lee, J. H., et al.. (2013). 3D compositional characterization of Si/SiO2 vertical interface structure by atom probe tomography. Electronic Materials Letters. 9(6). 747–750. 7 indexed citations

Choi, Man‐Sik, J. H. Lee, Nobuyuki Aoki, et al.. (2012). Gate-dependent photoconductivity of single layer graphene grafted with metalloporphyrin molecules. Applied Physics Letters. 100(16). 7 indexed citations

10.

Kang, Moon‐Sung, et al.. (2011). Measurement of femto-farad gate capacitance of a silicon nanowire FET using time-domain pulse response. 49. 234–235. 2 indexed citations

11.

Profatilova, Irina, et al.. (2008). Frequency dependence of conductivity of ethylene carbonate based electrolyte for Li-ion battery. Ionics. 15(1). 35–42. 6 indexed citations

12.

Whang, C. N., et al.. (2006). Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH3)(C2H5)]4 and SiH[N(CH3)2]3 Precursors. Journal of the Korean Physical Society. 48(4). 607–613. 1 indexed citations

13.

Yoshino, Hiroshi, et al.. (2006). Performance evaluation of hybrid ventilation system for residential buildings. 721–729. 1 indexed citations

14.

Chung, Kyu‐Hyuck, et al.. (2006). Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. Applied Physics Letters. 88(20). 28 indexed citations

15.

Gritsenko, V. A., K. A. Nasyrov, Yu. N. Novikov, et al.. (2005). Modeling of a EEPROM device based on silicon quantum dots embedded in high-k dielectrics. Microelectronic Engineering. 81(2-4). 530–534. 9 indexed citations

16.

Chang, Hyo Sik, Dae Won Moon, S. K. Kang, et al.. (2004). Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition. Applied Physics Letters. 84(7). 1171–1173. 46 indexed citations

17.

Lee, J. H., et al.. (2002). Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 20(5). 1828–1830. 23 indexed citations

18.

Cho, M.-H., Youngchae Roh, C. N. Whang, et al.. (2002). Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition. Applied Physics Letters. 81(3). 472–474. 305 indexed citations

19.

Roh, Seulki, et al.. (2000). 42.4: Novel Manufacturing Process of TFT‐LCD Featuring C/F on Array and Its Applications. SID Symposium Digest of Technical Papers. 31(1). 1018–1021. 7 indexed citations

20.

Kim, D., et al.. (1999). A 7‐inch Full‐Color Low‐Temperature Poly‐Si TFT‐LCD. SID Symposium Digest of Technical Papers. 30(1). 184–187. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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