Ijaz Talib

598 total citations
14 papers, 547 citations indexed

About

Ijaz Talib is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Ijaz Talib has authored 14 papers receiving a total of 547 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Ijaz Talib's work include Advanced Memory and Neural Computing (14 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Electronic and Structural Properties of Oxides (11 papers). Ijaz Talib is often cited by papers focused on Advanced Memory and Neural Computing (14 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Electronic and Structural Properties of Oxides (11 papers). Ijaz Talib collaborates with scholars based in Pakistan, Taiwan and China. Ijaz Talib's co-authors include Anwar Manzoor Rana, M.Y. Nadeem, Muhammad Ismail, Ejaz Ahmed, Fayyaz Hussain, Debashis Panda, Nazar Abbas Shah, Umesh Chand, Khalid Iqbal and Muhammad Imran and has published in prestigious journals such as Journal of Applied Physics, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

Ijaz Talib

14 papers receiving 539 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ijaz Talib Pakistan	14	518	198	180	142	14	14	547
S. Z. Rahaman Taiwan	17	830 1.6×	202 1.0×	214 1.2×	233 1.6×	10 0.7×	49	859
Wei-Su Chen Taiwan	15	594 1.1×	138 0.7×	131 0.7×	163 1.1×	9 0.6×	39	612
B. S. Kang South Korea	8	637 1.2×	184 0.9×	247 1.4×	140 1.0×	6 0.4×	11	686
Debanjan Jana Taiwan	13	587 1.1×	172 0.9×	174 1.0×	177 1.2×	6 0.4×	18	612
Hyun Sik Im South Korea	11	406 0.8×	171 0.9×	92 0.5×	123 0.9×	15 1.1×	15	426
Felix Messerschmitt Switzerland	5	326 0.6×	160 0.8×	113 0.6×	133 0.9×	16 1.1×	6	401
Fanju Zeng China	13	527 1.0×	288 1.5×	157 0.9×	64 0.5×	22 1.6×	22	558
Stefan Petzold Germany	12	378 0.7×	111 0.6×	71 0.4×	95 0.7×	6 0.4×	27	408
Chih‐Yi Liu Taiwan	11	460 0.9×	176 0.9×	133 0.7×	87 0.6×	7 0.5×	37	482
Hsin-Lu Chen China	13	520 1.0×	165 0.8×	165 0.9×	112 0.8×	3 0.2×	17	531

Countries citing papers authored by Ijaz Talib

Since Specialization

Citations

This map shows the geographic impact of Ijaz Talib's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ijaz Talib with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ijaz Talib more than expected).

Fields of papers citing papers by Ijaz Talib

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ijaz Talib. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ijaz Talib. The network helps show where Ijaz Talib may publish in the future.

Co-authorship network of co-authors of Ijaz Talib

This figure shows the co-authorship network connecting the top 25 collaborators of Ijaz Talib. A scholar is included among the top collaborators of Ijaz Talib based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ijaz Talib. Ijaz Talib is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Ismail, Muhammad, et al.. (2018). Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. Nanoscale Research Letters. 13(1). 318–318. 27 indexed citations

Ismail, Muhammad, Rehmat Ullah, Riaz Hussain, et al.. (2018). Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature. Applied Physics A. 124(2). 20 indexed citations

Ismail, Muhammad, Ijaz Talib, Fayyaz Hussain, et al.. (2018). Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory. Current Applied Physics. 18(8). 924–932. 18 indexed citations

Rana, Anwar Manzoor, Muhammad Ismail, Ejaz Ahmad, et al.. (2017). Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material. Scientific Reports. 7(1). 39539–39539. 91 indexed citations

Ismail, Muhammad, Anwar Manzoor Rana, Fayyaz Hussain, et al.. (2017). Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices. Current Applied Physics. 17(10). 1303–1309. 15 indexed citations

Ismail, Muhammad, Ejaz Ahmed, Anwar Manzoor Rana, et al.. (2016). Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant. ACS Applied Materials & Interfaces. 8(9). 6127–6136. 85 indexed citations

Rana, Anwar Manzoor, Muhammad Ismail, Ejaz Ahmed, et al.. (2015). Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films. Materials Science in Semiconductor Processing. 39. 211–216. 23 indexed citations

Ismail, Muhammad, Ejaz Ahmed, Anwar Manzoor Rana, et al.. (2015). Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells. Thin Solid Films. 583. 95–101. 24 indexed citations

Ismail, Muhammad, Ejaz Ahmed, Anwar Manzoor Rana, Ijaz Talib, & M.Y. Nadeem. (2015). Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications. Journal of Alloys and Compounds. 646. 662–668. 37 indexed citations

10.

Ismail, Muhammad, Ijaz Talib, Anwar Manzoor Rana, Ejaz Ahmed, & M.Y. Nadeem. (2015). Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices. Journal of Applied Physics. 117(8). 41 indexed citations

11.

Ismail, Muhammad, Chun-Yang Huang, Debashis Panda, et al.. (2014). Forming-free bipolar resistive switching in nonstoichiometric ceria films. Nanoscale Research Letters. 9(1). 45–45. 96 indexed citations

12.

Ismail, Muhammad, Anwar Manzoor Rana, Ijaz Talib, et al.. (2014). Bipolar tri-state resistive switching characteristics in Ti/CeO _x /Pt memory device. Chinese Physics B. 23(12). 126101–126101. 14 indexed citations

13.

Ismail, Muhammad, Ijaz Talib, Chun-Yang Huang, et al.. (2014). Resistive switching characteristics of Pt/CeO_x/TiN memory device. Japanese Journal of Applied Physics. 53(6). 60303–60303. 19 indexed citations

14.

Ismail, Muhammad, Anwar Manzoor Rana, Ijaz Talib, et al.. (2014). Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications. Solid State Communications. 202. 28–34. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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