Ian Sandall

618 citations

47 papers · 439 indexed · h-index 12

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
Instrumentation

Papers in

Instrumentation 5
- Advanced Optical Sensing Technologies 5
Atomic and Molecular Physics, and Optics 37
- Semiconductor Quantum Structures and Devices 33

Co-authors: M. Hopkinson Peter M. Smowton Chee Hing Tan D. J. Mowbray H.Y. Liu T. J. Badcock C. Perrella Huiyun Liu
Journals: Applied Physics Letters (9 papers)Optics Express (4 papers)IEEE Photonics Technology Letters (3 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United Kingdom Finland Netherlands

In The Last Decade

Ian Sandall

44 papers receiving 425 citations

Peers

Countries citing papers authored by Ian Sandall

Since Specialization

Citations

This map shows the geographic impact of Ian Sandall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ian Sandall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ian Sandall more than expected).

Fields of papers citing papers by Ian Sandall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ian Sandall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ian Sandall. The network helps show where Ian Sandall may publish in the future.

Co-authors

The 25 scholars most cited alongside Ian Sandall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ian Sandall Line = papers co-authored together Ian Sandall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Gamification Approaches for Improving Engagement and Learning in Small and Large Engineering Classes International Journal of Information and Education Technology ·David E. McIntosh, Waleed Al‐Nuaimy, K. Ji Sook, Ian Sandall, Lewis M Lampert, Charles H Ball	2023	3
2	Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers IEEE Transactions on Electron Devices ·Zhongming Cao, Ivona Z. Mitrović, Ian Sandall	2020	1
3	Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors Scientific Reports ·Ezekiel A. Anyebe, Ian Sandall, Zhiming Jin, Ana M. Sánchez, Mohana K. Rajpalke, T. D. Veal, Yuan‐Cheng Cao, Handong Li, Richard D. Harvey, Qiandong Zhuang	2017	20
4	Highly-mismatched InAs/InSe heterojunction diodes Applied Physics Letters ·A. V. Velichko, Z. R. Kudrynskyi, Selda Yetkin, O. Makarovsky, Manoj Kesaria, A. Krier, Ian Sandall, Chee Hing Tan, Z. D. Kovalyuk, A. Patanè	2016	11
5	Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode Electronics Letters ·Kevin Rodríguez Clifford, Peter Vines, Chee Hing Tan, Ian Sandall, Gerald S. Buller	2016	3
6	H-tailored surface conductivity in narrow band gap In(AsN) Applied Physics Letters ·A. V. Velichko, A. Patanè, M. Capizzi, Ian Sandall, D. Giubertoni, O. Makarovsky, A. Polimeni, A. Krier, Qiandong Zhuang, Chee Hing Tan	2015	5
7	Demonstration of InAsBi photoresponse beyond 3.5 μm Applied Physics Letters ·Ian Sandall, F. Bastiman, C. Perrella, Robert D. Richards, M.S. Pawar, J.P.R. David, Chee Hing Tan	2014	41
8	Demonstration of an InAsBi photodiode operating in the MWIR Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ian Sandall, F. Bastiman, (unknown), Robert D. Richards, J.P.R. David, Chee Hing Tan	2014	2
9	Temperature dependence of impact ionization in InAs Optics Express ·Ian Sandall, Jo Shien Ng, Shiyu Xie, Pin Jern Ker, Chee Hing Tan	2013	12
10	Linear array of InAs APDs operating at 2 µm Optics Express ·Ian Sandall, Shiyong Zhang, Chee Hing Tan	2013	15
11	Planar InAs photodiodes fabricated using He ion implantation Optics Express ·Ian Sandall, Chee Hing Tan, Andrew J. Smith, R. Gwilliam	2012	3
12	1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon Optics Express ·Ian Sandall, Jo Shien Ng, J.P.R. David, Chee Hing Tan, Ting Wang, Huiyun Liu	2012	26
13	Planar InAs photodiodes fabricated using He ion implantation View ·Ian Sandall, Chee Hing Tan, Andrew J. Smith, R. Gwilliam	2012	2
14	High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes Optics Letters ·Ian Sandall, Shiyu Xie, Jingjing Xie, Chee Hing Tan	2011	3
15	Origin of Temperature-Dependent Threshold Current in p-Doped and Undoped In(Ga)As Quantum Dot Lasers IEEE Journal of Selected Topics in Quantum Electronics ·Peter M. Smowton, I. Morcrette, Ian Sandall, M. Hopkinson, Huiyun Liu	2008	14
16	Localized Auger Recombination in Quantum-Dot Lasers IEEE Journal of Quantum Electronics ·P. Blood, А. М. Привалихин, Huw D. Summers, Ian Sandall	2007	11
17	Gain in p-doped quantum dot lasers Journal of Applied Physics ·Peter M. Smowton, Ian Sandall, П.Ю. Георгиевский, M. Hopkinson	2007	28
18	Improved performance of 1.3-/spl mu/m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers IEEE Photonics Technology Letters ·Jie Yang, Ian Sandall, Peter M. Smowton, D. J. Mowbray, H.Y. Liu, S. L. Liew, M. Hopkinson	2006	8
19	The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers IEEE Photonics Technology Letters ·Jie Yang, Ian Sandall, Peter M. Smowton, Ian R. Sellers, D. J. Mowbray, H.Y. Liu, M. Hopkinson	2005	16
20	AlGaInP laser diodes incorporating a 3λ∕4 multiple quantum barrier Applied Physics Letters ·A. Sobiesierski, Ian Sandall, Peter M. Smowton, P. Blood, A. B. Krysa, M. Rowan Brown, Kar Seng Teng, S.P. Wilks	2004	5

About Ian Sandall

Ian Sandall is a scholar working on Instrumentation, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy and Biomedical Engineering, having authored 47 papers that have together received 439 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor Lasers and Optical Devices (14 papers), Advanced Semiconductor Detectors and Materials (11 papers), Photonic and Optical Devices (8 papers), Spectroscopy and Laser Applications (7 papers), Nanowire Synthesis and Applications (7 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Advanced Optical Sensing Technologies (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (323 citations), Instrumentation (22 citations), Electrical and Electronic Engineering (367 citations), Spectroscopy (41 citations) and Materials Chemistry (96 citations). Ian Sandall has collaborated with scholars based in United Kingdom, Finland and Netherlands. Frequent co-authors include M. Hopkinson, Peter M. Smowton, Chee Hing Tan, D. J. Mowbray, H.Y. Liu, T. J. Badcock, C. Perrella, Huiyun Liu, J.P.R. David and J.P.R. David. Their work appears in journals such as Applied Physics Letters, Optics Express, IEEE Photonics Technology Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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