I. Berdalović

459 total citations
15 papers, 66 citations indexed

About

I. Berdalović is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. Berdalović has authored 15 papers receiving a total of 66 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 8 papers in Electronic, Optical and Magnetic Materials and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. Berdalović's work include GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (8 papers) and Advanced Optical Sensing Technologies (4 papers). I. Berdalović is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (8 papers) and Advanced Optical Sensing Technologies (4 papers). I. Berdalović collaborates with scholars based in Croatia, Switzerland and Germany. I. Berdalović's co-authors include Tomislav Suligoj, Mirko Poljak, F. Piro, Cesar Augusto Marin Tobon, Κωνσταντίνος Μουστάκας, H. Pernegger, W. Snoeys, T. Kugathasan, R. Cardella and H. Krüger and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

In The Last Decade

I. Berdalović

14 papers receiving 64 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Berdalović Croatia 5 53 30 26 26 25 15 66
Dilini Hemakumara United Kingdom 5 35 0.7× 11 0.4× 23 0.9× 50 1.9× 23 0.9× 9 84
F. Münz Czechia 5 20 0.4× 14 0.5× 8 0.3× 16 0.6× 29 1.2× 18 77
Zongzheng Du China 2 38 0.7× 28 0.9× 61 2.3× 24 0.9× 29 1.2× 2 82
Cyndia Yu United States 4 58 1.1× 23 0.8× 45 1.7× 29 1.1× 63 2.5× 13 129
A. Bailly-reyre France 4 30 0.6× 42 1.4× 38 1.5× 6 0.2× 26 1.0× 11 72
J. A. Bonetti United States 6 70 1.3× 25 0.8× 33 1.3× 16 0.6× 18 0.7× 8 90
M. P. Jiang United States 5 25 0.5× 38 1.3× 42 1.6× 25 1.0× 33 1.3× 8 93
Xian Shi China 6 37 0.7× 20 0.7× 71 2.7× 18 0.7× 26 1.0× 27 125
Guojian Qian China 6 38 0.7× 35 1.2× 66 2.5× 20 0.8× 74 3.0× 9 110

Countries citing papers authored by I. Berdalović

Since Specialization
Citations

This map shows the geographic impact of I. Berdalović's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Berdalović with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Berdalović more than expected).

Fields of papers citing papers by I. Berdalović

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Berdalović. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Berdalović. The network helps show where I. Berdalović may publish in the future.

Co-authorship network of co-authors of I. Berdalović

This figure shows the co-authorship network connecting the top 25 collaborators of I. Berdalović. A scholar is included among the top collaborators of I. Berdalović based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Berdalović. I. Berdalović is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Berdalović, I., et al.. (2024). Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process. IEEE Photonics Technology Letters. 36(20). 1241–1244. 1 indexed citations
2.
3.
Berdalović, I., et al.. (2024). Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers. 9–12. 2 indexed citations
4.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2023). Theoretical Prediction of Mobility Improvement in GaN-Based HEMTs at High Carrier Densities. IEEE Transactions on Electron Devices. 70(3). 1425–1429. 13 indexed citations
5.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2023). Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance. 314–317. 3 indexed citations
6.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2023). Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs. IEEE Transactions on Electron Devices. 70(11). 5577–5583. 6 indexed citations
7.
Berdalović, I., R. Cardella, J. Dingfelder, et al.. (2022). Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 1040. 167189–167189. 1 indexed citations
8.
Berdalović, I., et al.. (2022). Layout-Dependent Noise Performance of Single-Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology. 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO). 133–138. 4 indexed citations
9.
10.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2021). Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework. 1–4. 2 indexed citations
11.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2021). Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions. 74–79. 7 indexed citations
12.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2021). A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors. Journal of Applied Physics. 129(6). 18 indexed citations
13.
Berdalović, I., Mirko Poljak, & Tomislav Suligoj. (2020). On the modelling of interface roughness scattering in AlGaN/GaN heterostructures. 22–27. 3 indexed citations
14.
Cardella, R., I. Berdalović, N. Egidos, et al.. (2018). LAPA, a 5 Gb/s modular pseudo-LVDS driver in 180 nm CMOS with capacitively coupled pre-emphasis. CERN Document Server (European Organization for Nuclear Research). 38–38. 1 indexed citations
15.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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