Huajun Sun

1.9k total citations
47 papers, 1.6k citations indexed

About

Huajun Sun is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, Huajun Sun has authored 47 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 19 papers in Cellular and Molecular Neuroscience and 17 papers in Materials Chemistry. Recurrent topics in Huajun Sun's work include Advanced Memory and Neural Computing (37 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Neuroscience and Neural Engineering (15 papers). Huajun Sun is often cited by papers focused on Advanced Memory and Neural Computing (37 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Neuroscience and Neural Engineering (15 papers). Huajun Sun collaborates with scholars based in China, Taiwan and United States. Huajun Sun's co-authors include Lei Xu, Yi Li, Xiangshui Miao, Jinjian Zhang, Xiangshui Miao, Kan‐Hao Xue, Xiaohua Xu, Hao Tong, Qing Wang and Xiaoming Cheng and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Huajun Sun

41 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Huajun Sun China 19 1.5k 714 338 295 209 47 1.6k
Rongrong Cao China 18 1.5k 1.0× 502 0.7× 600 1.8× 202 0.7× 224 1.1× 30 1.6k
Yimao Cai China 18 1.6k 1.0× 735 1.0× 294 0.9× 362 1.2× 182 0.9× 47 1.7k
Elia Ambrosi Italy 17 1.3k 0.9× 547 0.8× 215 0.6× 209 0.7× 209 1.0× 34 1.4k
Nirmal Ramaswamy United States 22 1.6k 1.1× 586 0.8× 188 0.6× 194 0.7× 286 1.4× 38 1.7k
Alessandro Bricalli Italy 17 1.3k 0.9× 519 0.7× 192 0.6× 201 0.7× 201 1.0× 32 1.4k
Jihang Lee United States 15 1.5k 1.0× 555 0.8× 349 1.0× 444 1.5× 167 0.8× 16 1.6k
Vikas Rana Germany 18 1.6k 1.1× 694 1.0× 321 0.9× 291 1.0× 139 0.7× 62 1.8k
Jun Yeong Seok South Korea 25 2.4k 1.5× 893 1.3× 521 1.5× 695 2.4× 180 0.9× 36 2.4k
Yaxiong Zhou China 19 1.1k 0.7× 535 0.7× 161 0.5× 170 0.6× 110 0.5× 24 1.2k
Simone Balatti Italy 26 2.7k 1.7× 978 1.4× 408 1.2× 451 1.5× 295 1.4× 44 2.7k

Countries citing papers authored by Huajun Sun

Since Specialization
Citations

This map shows the geographic impact of Huajun Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huajun Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huajun Sun more than expected).

Fields of papers citing papers by Huajun Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huajun Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huajun Sun. The network helps show where Huajun Sun may publish in the future.

Co-authorship network of co-authors of Huajun Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Huajun Sun. A scholar is included among the top collaborators of Huajun Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Huajun Sun. Huajun Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Xiangxiang, Wenhao Shi, Xinyu Huang, et al.. (2025). 2D materials-based flash memory device: mechanism, structure, application. Materials Horizons. 12(20). 8409–8429. 1 indexed citations
2.
Zhang, Jun, Huajun Sun, Sheng Hu, et al.. (2025). An ion-gating synaptic memristor based on tri-layer HfOx composition regulation. Journal of Materials Chemistry C. 13(10). 5326–5331.
3.
Sun, Huajun, Jun Zhang, Kan‐Hao Xue, et al.. (2025). Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature. Advanced Electronic Materials. 11(13). 1 indexed citations
4.
Sun, Huajun, et al.. (2025). Memristor-Based Circuit Implementation and Circuitry Optimized Algorithm for Mamba Language Network. IEEE Transactions on Circuits and Systems I Regular Papers. 73(1). 425–438.
5.
Jia, He, Huiting Sui, Fuling Wu, et al.. (2024). Tuning ferroelectric domains and polarization properties of flexible BiFeO3 thin films by phase transition engineering. Journal of Alloys and Compounds. 1008. 176756–176756.
6.
Sun, Huajun, Weiming Cheng, Qiang He, et al.. (2024). Synapse Neurotransmitter Channel‐Inspired AlO x Memristor with “V” Type Oxygen Vacancy Distribution. Small Methods. 8(12). e2301657–e2301657. 6 indexed citations
7.
Liu, Xiaoxin, et al.. (2022). Analog Memristor-Based Dynamic Programmable Analog Filter. Journal of Physics Conference Series. 2356(1). 12008–12008. 1 indexed citations
8.
Yuan, Jun‐Hui, Ge‐Qi Mao, Kan‐Hao Xue, et al.. (2022). Ferroelectricity in HfO2 from a Coordination Number Perspective. Chemistry of Materials. 35(1). 94–103. 26 indexed citations
9.
10.
Mao, Ge‐Qi, Kan‐Hao Xue, Tao Wang, et al.. (2021). Homo-layer hafnia-based memristor with large analog switching window. Applied Physics Letters. 118(4). 13 indexed citations
11.
Zhang, Ying, Ge‐Qi Mao, Xiaolong Zhao, et al.. (2021). Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging. Nature Communications. 12(1). 7232–7232. 181 indexed citations
12.
Zhao, Chao, Tianyi Tang, Jiaqian Sun, et al.. (2020). Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials. Progress in Quantum Electronics. 76. 100313–100313. 17 indexed citations
13.
Guo, Jianwei, Xiaoming Su, Wei Luo, et al.. (2020). Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer. ACS Applied Electronic Materials. 2(3). 827–837. 21 indexed citations
14.
Mao, Ge‐Qi, Kan‐Hao Xue, Wei Wu, et al.. (2019). Oxygen migration around the filament region in HfOx memristors. AIP Advances. 9(10). 9 indexed citations
15.
Wang, Biao, Kan‐Hao Xue, Nian Liu, et al.. (2019). Self-compliance characteristics and switching degradation in TaO x -based memristors. Applied Physics Express. 12(10). 104003–104003. 2 indexed citations
16.
Sun, Huajun, et al.. (2017). Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions. Scientific Reports. 7(1). 10070–10070. 54 indexed citations
17.
Liu, Na, et al.. (2015). Charged Defects-Induced Resistive Switching in Sb2Te3 Memristor. Journal of Electronic Materials. 45(2). 1154–1159. 4 indexed citations
18.
19.
Li, Yi, Lei Xu, Jinjian Zhang, et al.. (2013). Ultrafast Synaptic Events in a Chalcogenide Memristor. Scientific Reports. 3(1). 1619–1619. 361 indexed citations
20.
Xu, Lei, et al.. (2013). Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5. Applied Physics Letters. 103(4). 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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