Hisashi Sato
About
In The Last Decade
Hisashi Sato
234 papers receiving 3.4k citations
Peers
Comparison fields: 5 of 111
- Materials Chemistry 1.5k
- Mechanical Engineering 1.3k
- Condensed Matter Physics 1.2k
- Electronic, Optical and Magnetic Materials 1.0k
- Electrical and Electronic Engineering 685
Countries citing papers authored by Hisashi Sato
This map shows the geographic impact of Hisashi Sato's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisashi Sato with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisashi Sato more than expected).
Fields of papers citing papers by Hisashi Sato
This network shows the impact of papers produced by Hisashi Sato. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisashi Sato. The network helps show where Hisashi Sato may publish in the future.
Co-authorship network of co-authors of Hisashi Sato
This figure shows the co-authorship network connecting the top 25 collaborators of Hisashi Sato. A scholar is included among the top collaborators of Hisashi Sato based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisashi Sato. Hisashi Sato is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 1 | |
| 4 | 0 | |
| 5 | 11 | |
| 6 | 5 | |
| 7 | 9 | |
| 8 | 4 | |
| 9 | 11 | |
| 10 | Aluminum matrix texture in Al–Al | 3 |
| 11 | 結晶可塑性を使った,Cu/絶縁層界面クラック進展シミュレーションの開発 | 2 |
| 12 | Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al₂O₃ Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) | 0 |
| 13 | 3 | |
| 14 | 5 | |
| 15 | 1 | |
| 16 | 1 | |
| 17 | 1 | |
| 18 | 7 | |
| 19 | Tc versus lattice constants in MBE-grown M2CuO4 (M=La, Sr, Ba) | 0 |
| 20 | 6 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.