Hiroyuki Handa
About
In The Last Decade
Hiroyuki Handa
74 papers receiving 867 citations
Peers
Comparison fields: 5 of 65
- Materials Chemistry 582
- Electrical and Electronic Engineering 506
- Biomedical Engineering 216
- Atomic and Molecular Physics, and Optics 136
- Condensed Matter Physics 98
Countries citing papers authored by Hiroyuki Handa
This map shows the geographic impact of Hiroyuki Handa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroyuki Handa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroyuki Handa more than expected).
Fields of papers citing papers by Hiroyuki Handa
This network shows the impact of papers produced by Hiroyuki Handa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroyuki Handa. The network helps show where Hiroyuki Handa may publish in the future.
Co-authorship network of co-authors of Hiroyuki Handa
This figure shows the co-authorship network connecting the top 25 collaborators of Hiroyuki Handa. A scholar is included among the top collaborators of Hiroyuki Handa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroyuki Handa. Hiroyuki Handa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) | 2 |
| 3 | 99.3% efficiency of boost-up converter for totem-pole bridgeless PFC using GaN gate injection transistors | 7 |
| 4 | 1 | |
| 5 | Room temperature logic inverter on epitaxial graphene-on-silicon device (Selected topics in applied physics: Technology, physics, and modeling of graphene devices) | 1 |
| 6 | Investigation of Graphene Field Effect Transistors with Al | 5 |
| 7 | 7 | |
| 8 | 3 | |
| 9 | 4 | |
| 10 | 30 | |
| 11 | 3 | |
| 12 | 16 | |
| 13 | 97 | |
| 14 | 1 | |
| 15 | 46 | |
| 16 | 1 | |
| 17 | 2 | |
| 18 | 5 | |
| 19 | 6 | |
| 20 | 0 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.