Hidetoshi Suzuki

746 total citations
70 papers, 580 citations indexed

About

Hidetoshi Suzuki is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Hidetoshi Suzuki has authored 70 papers receiving a total of 580 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Atomic and Molecular Physics, and Optics, 55 papers in Electrical and Electronic Engineering and 31 papers in Condensed Matter Physics. Recurrent topics in Hidetoshi Suzuki's work include Semiconductor Quantum Structures and Devices (59 papers), GaN-based semiconductor devices and materials (31 papers) and Semiconductor materials and devices (21 papers). Hidetoshi Suzuki is often cited by papers focused on Semiconductor Quantum Structures and Devices (59 papers), GaN-based semiconductor devices and materials (31 papers) and Semiconductor materials and devices (21 papers). Hidetoshi Suzuki collaborates with scholars based in Japan, United States and South Korea. Hidetoshi Suzuki's co-authors include Masafumi Yamaguchi, Yoshio Ohshita, Nobuaki Kojima, Takuo Sasaki, Kenichi Nishimura, Masamitu Takahasi, Koji Arafune, Itaru Kamiya, Tetsuo Ikari and Atsuhiko Fukuyama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solar Energy.

In The Last Decade

Hidetoshi Suzuki

65 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hidetoshi Suzuki Japan 13 435 401 193 124 96 70 580
C. Vannuffel France 10 287 0.7× 237 0.6× 102 0.5× 158 1.3× 60 0.6× 19 444
Takuo Sasaki Japan 9 248 0.6× 185 0.5× 75 0.4× 99 0.8× 98 1.0× 36 355
O. Gürlü Türkiye 11 220 0.5× 394 1.0× 61 0.3× 183 1.5× 113 1.2× 27 547
Giuliano Vescovi Sweden 8 301 0.7× 178 0.4× 186 1.0× 224 1.8× 375 3.9× 11 552
Byungha Shin United States 13 638 1.5× 243 0.6× 63 0.3× 251 2.0× 124 1.3× 21 723
H. Hattab Germany 11 126 0.3× 262 0.7× 75 0.4× 393 3.2× 67 0.7× 20 504
J.H. Mazur United States 7 266 0.6× 224 0.6× 61 0.3× 98 0.8× 51 0.5× 19 351
John A. Carlin United States 17 987 2.3× 605 1.5× 38 0.2× 149 1.2× 310 3.2× 53 1.1k
Ville Polojärvi Finland 13 512 1.2× 371 0.9× 82 0.4× 129 1.0× 191 2.0× 60 607
Arto Aho Finland 14 557 1.3× 428 1.1× 96 0.5× 129 1.0× 227 2.4× 61 674

Countries citing papers authored by Hidetoshi Suzuki

Since Specialization
Citations

This map shows the geographic impact of Hidetoshi Suzuki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hidetoshi Suzuki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hidetoshi Suzuki more than expected).

Fields of papers citing papers by Hidetoshi Suzuki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hidetoshi Suzuki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hidetoshi Suzuki. The network helps show where Hidetoshi Suzuki may publish in the future.

Co-authorship network of co-authors of Hidetoshi Suzuki

This figure shows the co-authorship network connecting the top 25 collaborators of Hidetoshi Suzuki. A scholar is included among the top collaborators of Hidetoshi Suzuki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hidetoshi Suzuki. Hidetoshi Suzuki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Suzuki, Hidetoshi, et al.. (2024). Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy. Journal of Crystal Growth. 649. 127915–127915.
2.
Fukuyama, Atsuhiko, et al.. (2020). Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method. Japanese Journal of Applied Physics. 59(SG). SGGF10–SGGF10. 2 indexed citations
3.
Suzuki, Hidetoshi, Takuo Sasaki, Masamitu Takahasi, et al.. (2017). Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction. Japanese Journal of Applied Physics. 56(8S2). 08MA06–08MA06. 1 indexed citations
4.
5.
Suzuki, Akio, Atsuhiko Fukuyama, Hidetoshi Suzuki, et al.. (2015). Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor–liquid–solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping. Japanese Journal of Applied Physics. 54(3). 35001–35001.
6.
Ohshita, Yoshio, T. Tanaka, M. Inagaki, et al.. (2015). Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy. Japanese Journal of Applied Physics. 54(4). 41001–41001. 10 indexed citations
7.
Sasaki, Takuo, Masamitu Takahasi, Hidetoshi Suzuki, Yoshio Ohshita, & Masafumi Yamaguchi. (2015). In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE. Journal of Crystal Growth. 425. 13–15. 3 indexed citations
8.
Ohshita, Yoshio, Hidetoshi Suzuki, Hideaki Machida, et al.. (2014). N–H related defects in GaAsN grown through chemical beam epitaxy. Japanese Journal of Applied Physics. 53(3). 31001–31001. 10 indexed citations
9.
Fukuyama, Atsuhiko, Ding Wen, Akio Suzuki, et al.. (2014). Microstructure of the nitrogen-induced localized state in GaAsN thin films grown by chemical beam epitaxy. 195. 1148–1151.
10.
Suzuki, Hidetoshi, et al.. (2013). Effects of nitrogen precursor on the Au-assisted vapor–liquid–solid growth of GaAs(N) nanostructures. Journal of Crystal Growth. 386. 100–106. 3 indexed citations
11.
Sasaki, Takuo, Hidetoshi Suzuki, Masamitu Takahasi, et al.. (2012). Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001). Japanese Journal of Applied Physics. 51(2S). 02BP01–02BP01. 1 indexed citations
12.
Sasaki, Takuo, Hidetoshi Suzuki, M. Inagaki, et al.. (2011). Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers. IEEE Journal of Photovoltaics. 2(1). 35–40. 5 indexed citations
13.
Inagaki, M., Hidetoshi Suzuki, Akio Suzuki, et al.. (2011). Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence. Japanese Journal of Applied Physics. 50(4S). 04DP14–04DP14. 2 indexed citations
14.
Suzuki, Hidetoshi, et al.. (2010). Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics. 49(12R). 121001–121001. 13 indexed citations
15.
Suzuki, Hidetoshi, et al.. (2010). Relationship between a nitrogen‐related hole trap and ionized acceptors density in p‐type GaAsN grown by chemical beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(2). 616–618. 3 indexed citations
16.
Suzuki, Hidetoshi, et al.. (2010). A recombination center in p-type GaAsN grown by chemical beam epitaxy. Solar Energy Materials and Solar Cells. 95(1). 281–283. 5 indexed citations
17.
Sasaki, Takuo, Hidetoshi Suzuki, Masamitu Takahasi, et al.. (2010). Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy. Journal of Crystal Growth. 323(1). 13–16. 18 indexed citations
18.
Kojima, Nobuaki, et al.. (2009). Novel materials for high-efficiency solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7518. 75180P–75180P. 1 indexed citations
19.
Nishimura, Kenichi, Hae‐Seok Lee, Hidetoshi Suzuki, Yoshio Ohshita, & Masafumi Yamaguchi. (2007). Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source. Japanese Journal of Applied Physics. 46(5R). 2844–2844. 22 indexed citations
20.
Akimoto, Koichi, Tomohiro Aoyama, Hidetoshi Suzuki, et al.. (2004). Structure of the Si(113) surface studied by surface X-ray diffraction. Applied Surface Science. 237(1-4). 40–44. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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