Hideto Yanagisawa

435 total citations
30 papers, 387 citations indexed

About

Hideto Yanagisawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, Hideto Yanagisawa has authored 30 papers receiving a total of 387 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 10 papers in Mechanics of Materials. Recurrent topics in Hideto Yanagisawa's work include Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (11 papers) and Copper Interconnects and Reliability (10 papers). Hideto Yanagisawa is often cited by papers focused on Semiconductor materials and devices (19 papers), Semiconductor materials and interfaces (11 papers) and Copper Interconnects and Reliability (10 papers). Hideto Yanagisawa collaborates with scholars based in Japan. Hideto Yanagisawa's co-authors include Katsutaka Sasaki, Yoshio Abe, Midori Kawamura, K. Sasaki, Y. Kaga, Akira Sakai, Misao Yamane, Shigeaki Zaima, Masahiro Kudo and Junpei Sakurai and has published in prestigious journals such as Thin Solid Films, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Hideto Yanagisawa

29 papers receiving 386 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hideto Yanagisawa Japan 10 240 190 155 99 62 30 387
L. Ouellet Canada 11 219 0.9× 183 1.0× 79 0.5× 70 0.7× 38 0.6× 19 342
M. C. Hugon France 13 420 1.8× 305 1.6× 232 1.5× 89 0.9× 74 1.2× 52 537
J. A. Mendes Portugal 11 103 0.4× 255 1.3× 151 1.0× 132 1.3× 76 1.2× 36 405
Sa‐Kyun Rha South Korea 13 421 1.8× 265 1.4× 128 0.8× 190 1.9× 87 1.4× 42 562
Y. F. Hsieh Taiwan 13 297 1.2× 124 0.7× 76 0.5× 97 1.0× 170 2.7× 42 448
Kai‐Erik Elers Finland 10 411 1.7× 214 1.1× 150 1.0× 176 1.8× 30 0.5× 11 459
Takaomi Matsutani Japan 13 308 1.3× 290 1.5× 92 0.6× 66 0.7× 26 0.4× 50 508
W. F. A. Besling Netherlands 11 473 2.0× 287 1.5× 111 0.7× 112 1.1× 47 0.8× 23 560
S. Groudeva‐Zotova Germany 10 90 0.4× 250 1.3× 65 0.4× 101 1.0× 94 1.5× 16 355
Antaryami Mohanta Switzerland 14 216 0.9× 332 1.7× 70 0.5× 144 1.5× 60 1.0× 35 476

Countries citing papers authored by Hideto Yanagisawa

Since Specialization
Citations

This map shows the geographic impact of Hideto Yanagisawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hideto Yanagisawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hideto Yanagisawa more than expected).

Fields of papers citing papers by Hideto Yanagisawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hideto Yanagisawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hideto Yanagisawa. The network helps show where Hideto Yanagisawa may publish in the future.

Co-authorship network of co-authors of Hideto Yanagisawa

This figure shows the co-authorship network connecting the top 25 collaborators of Hideto Yanagisawa. A scholar is included among the top collaborators of Hideto Yanagisawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hideto Yanagisawa. Hideto Yanagisawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sasaki, Katsutaka, et al.. (2009). Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films. Japanese Journal of Applied Physics. 48(8). 85504–85504.
2.
Kudo, Masahiro, et al.. (2008). Crystal Orientation of Epitaxial α-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering. Japanese Journal of Applied Physics. 47(7R). 5608–5608. 4 indexed citations
3.
Sasaki, Katsutaka, et al.. (2007). Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film. Japanese Journal of Applied Physics. 46(8R). 5249–5249. 2 indexed citations
4.
Yanagisawa, Hideto, Katsutaka Sasaki, Junpei Sakurai, et al.. (2006). Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies. Journal of Crystal Growth. 297(1). 80–86. 9 indexed citations
5.
Yanagisawa, Hideto, et al.. (2002). Electrical Properties of HfO2Thin Insulating Film Prepared by Anodic Oxidation. Japanese Journal of Applied Physics. 41(Part 1, No. 8). 5284–5287. 14 indexed citations
6.
Yanagisawa, Hideto, et al.. (2001). Initial silicide formation process of Mo/(100) Si system prepared using an ultrahigh-vacuum sputtering system. Electronics and Communications in Japan (Part II Electronics). 84(3). 71–78. 8 indexed citations
7.
Yanagisawa, Hideto, et al.. (2000). Single-Oriented Growth of (111) Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization. Japanese Journal of Applied Physics. 39(10R). 5987–5987. 18 indexed citations
8.
Yanagisawa, Hideto, et al.. (2000). Study on Preparation Conditions of Single-Oriented (002) Zr Thin Films on n-(001) Si. Japanese Journal of Applied Physics. 39(7R). 4110–4110. 6 indexed citations
9.
Yamane, Misao, et al.. (2000). Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability. Electronics and Communications in Japan (Part II Electronics). 83(7). 1–8. 2 indexed citations
10.
Yamane, Misao, et al.. (1999). A study on the thin‐film capacitor with high heatproof property and high reliability by using anodized film of Al3Hf intermetallic compound. Electronics and Communications in Japan (Part II Electronics). 82(4). 17–24. 1 indexed citations
11.
Yamane, Misao, et al.. (1999). A study on the thin-film capacitor with high heatproof property and high reliability by using anodized film of Al3Hf intermetallic compound. Electronics and Communications in Japan (Part II Electronics). 82(4). 17–24. 1 indexed citations
12.
Yanagisawa, Hideto, et al.. (1998). Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization. Japanese Journal of Applied Physics. 37(8R). 4482–4482. 48 indexed citations
13.
Yanagisawa, Hideto, et al.. (1998). A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si. Japanese Journal of Applied Physics. 37(2R). 643–643. 13 indexed citations
14.
Kaga, Y., et al.. (1998). Formation Process and Electrical Property of RuO2 Thin Films Prepared by Reactive Sputtering. Japanese Journal of Applied Physics. 37(6R). 3457–3457. 35 indexed citations
15.
Yanagisawa, Hideto, et al.. (1998). Orientational growth of Al(111) caused by interposing Al3Ti layer on a highly oriented TiN(200) film. Electronics and Communications in Japan (Part II Electronics). 81(9). 46–53. 2 indexed citations
16.
Yanagisawa, Hideto, et al.. (1997). Preparation of Cu 10Zr 7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu 10Zr 7/ZrN/Si Contact System. Japanese Journal of Applied Physics. 36(12R). 7302–7302. 2 indexed citations
17.
Sasaki, Katsutaka, et al.. (1996). Preparation of CuTi‐Cu3Ti compound alloy films and their applications as diffusion barrier in Cu/CuTi‐Cu3Ti/TiN/Si multilayered contact system. Electronics and Communications in Japan (Part II Electronics). 79(8). 49–56. 2 indexed citations
18.
Kawamura, Midori, Yoshio Abe, Hideto Yanagisawa, & K. Sasaki. (1996). Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties. Thin Solid Films. 287(1-2). 115–119. 88 indexed citations
19.
Yanagisawa, Hideto, Atsushi Noya, Katsutaka Sasaki, & Yoshio Abe. (1996). Diffusion barrier effects of Al3Zr/Zr bilayered films interposed between Al and Si. Electronics and Communications in Japan (Part II Electronics). 79(9). 63–69. 1 indexed citations
20.
Yanagisawa, Hideto, et al.. (1983). Three-Line microstrip directional coupler with dielectric overlay. Electronics Letters. 19(22). 911–912. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by L. Ouellet Breakdown of academic impact, for papers by M. C. Hugon Breakdown of academic impact, for papers by J. A. Mendes Breakdown of academic impact, for papers by Sa‐Kyun Rha Breakdown of academic impact, for papers by Y. F. Hsieh Breakdown of academic impact, for papers by Kai‐Erik Elers Breakdown of academic impact, for papers by Takaomi Matsutani Breakdown of academic impact, for papers by W. F. A. Besling Breakdown of academic impact, for papers by S. Groudeva‐Zotova Breakdown of academic impact, for papers by Antaryami Mohanta
Rankless by CCL
2026