Heiko Frenzel

28 papers receiving 733 citations

Peers

Heiko Frenzel
Comparison fields: 5 of 30
  • Materials Chemistry 617
  • Electrical and Electronic Engineering 496
  • Electronic, Optical and Magnetic Materials 253
  • Polymers and Plastics 97
  • Atomic and Molecular Physics, and Optics 78
Replace Alexander Lajn with:
Alexander Lajn Germany
K. W. Geng China
Yasube Kashiwaba Japan
Mohan Gangrade India
Hiroyuki Yuji Japan
Ming‐Kwei Lee Taiwan
Gul Rahman Pakistan
Shunsuke Akasaka Japan
B. P. Zhang Japan
Alan Elliot United States
Heiko Frenzel relative to Alexander Lajn Germany Alexander Lajn's profile →
Citations per field
00.5×1.6×
Alexander Lajn · 1×
Citations per year

Countries citing papers authored by Heiko Frenzel

Since Specialization
Citations

This map shows the geographic impact of Heiko Frenzel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Heiko Frenzel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Heiko Frenzel more than expected).

Fields of papers citing papers by Heiko Frenzel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Heiko Frenzel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Heiko Frenzel. The network helps show where Heiko Frenzel may publish in the future.

Co-authorship network of co-authors of Heiko Frenzel

This figure shows the co-authorship network connecting the top 25 collaborators of Heiko Frenzel. A scholar is included among the top collaborators of Heiko Frenzel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Heiko Frenzel. Heiko Frenzel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
#WorkIndexed citations
1 19
2 6
3 45
4 25
5 30
6
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010)
12
7 3
8 4
9 1
10 140
11 121
12 14
13 52
14 26
15 1
16 23
17 2
18 1
19 58
20 27

About Heiko Frenzel

Heiko Frenzel is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 29 papers that have together received 758 indexed citations. Recurring topics across this work include ZnO doping and properties (21 papers), Semiconductor materials and devices (17 papers) and Thin-Film Transistor Technologies (14 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (253 citations), Materials Chemistry (617 citations) and Electrical and Electronic Engineering (496 citations). Heiko Frenzel has collaborated with scholars based in Germany and Portugal. Frequent co-authors include Marius Grundmann, Holger von Wenckstern, Alexander Lajn, Michael Lorenz, Friedrich‐Leonhard Schein, H. Hochmuth, Zhipeng Zhang, G. Biehne, M. Brandt and Florian Schmidt. Their work appears in journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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