Hailing Guo

648 total citations
31 papers, 519 citations indexed

About

Hailing Guo is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hailing Guo has authored 31 papers receiving a total of 519 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Materials Chemistry, 18 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hailing Guo's work include Diamond and Carbon-based Materials Research (8 papers), Semiconductor materials and devices (8 papers) and Graphene research and applications (7 papers). Hailing Guo is often cited by papers focused on Diamond and Carbon-based Materials Research (8 papers), Semiconductor materials and devices (8 papers) and Graphene research and applications (7 papers). Hailing Guo collaborates with scholars based in China, United Kingdom and France. Hailing Guo's co-authors include Yuzheng Guo, Zhaofu Zhang, Wei Fan, Dian Wu, Dejun Fu, John Robertson, Xiying Fan, Honglei Wu, Hang Zhou and Qiang Lou and has published in prestigious journals such as Advanced Materials, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Hailing Guo

29 papers receiving 510 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hailing Guo China 13 354 278 86 84 57 31 519
Md. Majibul Haque Babu Bangladesh 12 368 1.0× 194 0.7× 37 0.4× 41 0.5× 56 1.0× 21 459
Gopal Sanyal India 15 451 1.3× 248 0.9× 92 1.1× 37 0.4× 67 1.2× 43 607
V. A. Kochubey Russia 6 257 0.7× 231 0.8× 36 0.4× 91 1.1× 75 1.3× 8 395
Apostolos Kordatos United Kingdom 13 246 0.7× 286 1.0× 25 0.3× 59 0.7× 38 0.7× 22 449
Biplab Chatterjee India 12 293 0.8× 226 0.8× 90 1.0× 58 0.7× 51 0.9× 20 505
P. Sanguino Portugal 12 340 1.0× 186 0.7× 41 0.5× 36 0.4× 40 0.7× 40 454
Mohamed Redha Khelladi Algeria 13 322 0.9× 354 1.3× 30 0.3× 49 0.6× 129 2.3× 40 524
Yujue Yang China 14 507 1.4× 356 1.3× 23 0.3× 102 1.2× 71 1.2× 25 650
L. V. Yakovkina Russia 12 280 0.8× 327 1.2× 51 0.6× 87 1.0× 9 0.2× 41 444
Ramazan Esen Türkiye 16 721 2.0× 561 2.0× 64 0.7× 44 0.5× 80 1.4× 31 843

Countries citing papers authored by Hailing Guo

Since Specialization
Citations

This map shows the geographic impact of Hailing Guo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hailing Guo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hailing Guo more than expected).

Fields of papers citing papers by Hailing Guo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hailing Guo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hailing Guo. The network helps show where Hailing Guo may publish in the future.

Co-authorship network of co-authors of Hailing Guo

This figure shows the co-authorship network connecting the top 25 collaborators of Hailing Guo. A scholar is included among the top collaborators of Hailing Guo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hailing Guo. Hailing Guo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cao, Ruyue, Hailing Guo, Jun‐Wei Luo, Yuzheng Guo, & John Robertson. (2025). Density Functional Analysis of Threshold Voltage Control by Oxide Dipole Layers in Si- and MoS2-Based FETs. ACS Applied Electronic Materials. 7(2). 721–728.
2.
Yan, Han, Yan Wang, Yang Li, et al.. (2025). A clean van der Waals interface between the high-k dielectric zirconium oxide and two-dimensional molybdenum disulfide. Nature Electronics. 8(10). 906–912.
3.
Zhang, Xinyang, Yue Li, Hao Yan, et al.. (2025). Zeolite framework confined Cu1-O pairs for enhanced industrial naphtha catalytic cracking. Chemical Engineering Journal. 505. 159289–159289. 1 indexed citations
4.
Tan, Shuang, Francesco Dalena, Igor E. Golub, et al.. (2024). Spectroscopic characterization of black N- and P-doped zeolite templated carbons. Microporous and Mesoporous Materials. 381. 113347–113347. 1 indexed citations
5.
Yu, Wei, Hailing Guo, Xiaoming Zha, et al.. (2024). Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending. Journal of Material Science and Technology. 207. 76–85. 2 indexed citations
6.
Guo, Hailing, Zhaofu Zhang, Chen Shao, et al.. (2024). Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics. Journal of Material Science and Technology. 201. 149–156. 1 indexed citations
7.
Yu, Wei, Hailing Guo, Xiaoming Zha, et al.. (2023). Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric. IEEE Transactions on Electron Devices. 70(11). 5550–5556. 5 indexed citations
8.
Zhang, Zhaofu, Wei Liu, Fengxiang Ma, et al.. (2023). Theoretical insights into the two-dimensional gallium oxide monolayer for adsorption and gas sensing of C4F7N decomposition products. Journal of Materials Chemistry C. 11(35). 11928–11935. 14 indexed citations
9.
Guo, Hailing, Xiting Wang, Ruyue Cao, et al.. (2023). Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study. Journal of Applied Physics. 134(11). 5 indexed citations
10.
Wan, Xuhao, Zeyuan Li, Wei Yu, et al.. (2023). Machine Learning Paves the Way for High Entropy Compounds Exploration: Challenges, Progress, and Outlook. Advanced Materials. 37(31). e2305192–e2305192. 49 indexed citations
11.
Guo, Hailing, Wei Yu, John Robertson, et al.. (2023). Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors. Nanoscale. 15(7). 3496–3503. 15 indexed citations
12.
Lou, Qiang, Hailing Guo, Jiahao Chen, et al.. (2023). Fluorinated Graphene–Lewis-Base Polymer Composites as a Multifunctional Passivation Layer for High-Performance Perovskite Solar Cells. ACS Applied Materials & Interfaces. 15(33). 39374–39383. 10 indexed citations
13.
Yin, Yiheng, Chen Shao, Hailing Guo, et al.. (2022). Negative Differential Resistance Effect in “Cold” Metal Heterostructure Diodes. IEEE Electron Device Letters. 43(3). 498–501. 13 indexed citations
14.
Tan, Shuang, Chunxu Wang, Yann Foucaud, et al.. (2022). Ordered sodium zeolite-templated carbon with high first discharge capacity for sodium battery application. Microporous and Mesoporous Materials. 336. 111853–111853. 10 indexed citations
15.
Guo, Hailing, Zhaofu Zhang, Xiting Wang, et al.. (2020). Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS2and WS2) van der Waals heterostructures. Nanoscale. 12(38). 20025–20032. 58 indexed citations
16.
Guo, Hailing, Zhaofu Zhang, Yuzheng Guo, et al.. (2019). Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces. Applied Surface Science. 505. 144650–144650. 24 indexed citations
17.
Guo, Hailing, et al.. (2013). Coordination mechanism of SaaS service supply chain: Based on compensation contracts. Journal of Industrial Engineering and Management. 6(4). 4 indexed citations
18.
Meng, Xiuqing, Xiying Fan, & Hailing Guo. (1998). A new formula on the thickness of films deposited by planar and cylindrical magnetron sputtering. Thin Solid Films. 335(1-2). 279–283. 8 indexed citations
19.
Wu, Dian, et al.. (1997). Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering. Applied Physics A. 64(6). 593–595. 62 indexed citations
20.
Shi, Ying, et al.. (1996). Structure and electrical characteristics of ICBD C60 films. Applied Physics A. 63(4). 353–357. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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