H. Wirth

729 total citations
25 papers, 287 citations indexed

About

H. Wirth is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, H. Wirth has authored 25 papers receiving a total of 287 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 5 papers in Computational Mechanics and 5 papers in Materials Chemistry. Recurrent topics in H. Wirth's work include Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (12 papers) and Ion-surface interactions and analysis (5 papers). H. Wirth is often cited by papers focused on Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (12 papers) and Ion-surface interactions and analysis (5 papers). H. Wirth collaborates with scholars based in Germany, United Kingdom and Hong Kong. H. Wirth's co-authors include W. Skorupa, D. Panknin, Steffen Oswald, E. Niemann, G. Bräuer, R. Repnow, S. Fung, Ming Gong, C. D. Beling and E. Jaeschke and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

H. Wirth

23 papers receiving 275 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Wirth Germany	9	194	77	64	62	36	25	287
Maria-Guglielmina Pelizzo Italy	9	117 0.6×	63 0.8×	48 0.8×	37 0.6×	31 0.9×	34	246
C. Paolini Italy	11	172 0.9×	55 0.7×	168 2.6×	78 1.3×	48 1.3×	27	335
N. Itoh United Kingdom	3	126 0.6×	56 0.7×	161 2.5×	127 2.0×	36 1.0×	4	285
A. Nehari France	13	140 0.7×	88 1.1×	199 3.1×	45 0.7×	31 0.9×	30	337
D. J. Bonser United States	9	326 1.7×	138 1.8×	210 3.3×	50 0.8×	22 0.6×	11	416
Н.В. Абросимов Germany	10	268 1.4×	156 2.0×	205 3.2×	33 0.5×	61 1.7×	38	423
S. B. Hyder United States	12	257 1.3×	210 2.7×	92 1.4×	13 0.2×	32 0.9×	28	363
A. I. Belyaeva Ukraine	12	88 0.5×	67 0.9×	166 2.6×	77 1.2×	6 0.2×	59	353
D. V. Stevanovic Canada	9	182 0.9×	55 0.7×	77 1.2×	165 2.7×	23 0.6×	18	266
Gary J. Linford United States	9	295 1.5×	300 3.9×	44 0.7×	36 0.6×	16 0.4×	30	454

Countries citing papers authored by H. Wirth

Since Specialization

Citations

This map shows the geographic impact of H. Wirth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Wirth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Wirth more than expected).

Fields of papers citing papers by H. Wirth

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Wirth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Wirth. The network helps show where H. Wirth may publish in the future.

Co-authorship network of co-authors of H. Wirth

This figure shows the co-authorship network connecting the top 25 collaborators of H. Wirth. A scholar is included among the top collaborators of H. Wirth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Wirth. H. Wirth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Anwand, W., G. Bräuer, H. Wirth, W. Skorupa, & P. G. Coleman. (2002). The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H–SiC. Applied Surface Science. 194(1-4). 127–130. 7 indexed citations

Panknin, D., H. Wirth, A. Mücklich, & W. Skorupa. (2001). Electrical and microstructural properties of highly boron-implantation doped 6H–SiC. Journal of Applied Physics. 89(6). 3162–3167. 18 indexed citations

Panknin, D., H. Wirth, W. Anwand, G. Bräuer, & W. Skorupa. (2000). High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing. Materials science forum. 338-342. 877–880. 4 indexed citations

Zappe, Stefan, Ε. Obermeier, J. Stoëmenos, et al.. (1999). Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer. Materials Science and Engineering B. 61-62. 522–525. 6 indexed citations

Liechtenstein, V.Kh., Alexander Baranov, R. Repnow, et al.. (1999). Preparation and comparative testing of advanced diamond-like carbon foils for tandem accelerators and time-of-flight spectrometers. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 438(1). 79–85. 27 indexed citations

Panknin, D., H. Wirth, A. Mücklich, & W. Skorupa. (1999). Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H–SiC. Materials Science and Engineering B. 61-62. 363–367. 7 indexed citations

Gong, Ming, S. Fung, C. D. Beling, et al.. (1999). Gallium implantation induced deep levels in n-type 6H–SIC. Journal of Applied Physics. 85(1). 105–107. 14 indexed citations

Panknin, D., W. Skorupa, H. Wirth, et al.. (1999). Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 391–396. 1 indexed citations

Fung, S., Ming Gong, C. D. Beling, et al.. (1998). Aluminum-implantation-induced deep levels in n-type 6H–SiC. Journal of Applied Physics. 84(2). 1152–1154. 12 indexed citations

10.

Wirth, H., W. Anwand, G. Bräuer, et al.. (1998). Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS. Materials science forum. 264-268. 729–732. 5 indexed citations

11.

Gong, Ming, C. D. Beling, S. Fung, et al.. (1998). Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC. Applied Physics Letters. 72(21). 2739–2741. 23 indexed citations

12.

Akhperjanian, A. G., et al.. (1998). The Optical Layout Of The HEGRA Cherenkov Telescopes. Experimental Astronomy. 8(2). 135–152. 3 indexed citations

13.

Bräuer, G., W. Anwand, P. G. Coleman, et al.. (1997). Experimental determination of positronic and electronic characteristics of 3C-SiC. Applied Surface Science. 116. 19–22. 5 indexed citations

14.

Pérez‐Rodríguez, A., L. Calvo‐Barrio, J.R. Morante, et al.. (1997). Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation. Materials science forum. 258-263. 727–732.

15.

Fomin, V. P., et al.. (1995). The angular resolution and the brightness contrast of sources for ground-based γ-ray Cherenkov telescopes. Astroparticle Physics. 4(2). 113–118. 1 indexed citations

16.

Grötzschel, R., et al.. (1995). Slow, highly charged ions from a 7.25 GHz ECR ion source. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 98(1-4). 528–531. 7 indexed citations

17.

Hofmann, W., T. Kihm, M. Panter, et al.. (1992). Measurement of the angular distributions of particles in air showers. Physical review. D. Particles, fields, gravitation, and cosmology/Physical review. D. Particles and fields. 46(7). 2831–2845. 2 indexed citations

18.

Wirth, H., et al.. (1991). Cobalt-60 source on thin self-supporting carbon foil prepared by molecular plating. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 303(1). 106–114.

19.

Baumann, H., Κ. Bethge, & H. Wirth. (1980). Lifetime increase of a pig ion source. Nuclear Instruments and Methods. 171(3). 621–622. 4 indexed citations

20.

Baumann, H. & H. Wirth. (1979). Preparation of isotopic targets by ion beam sputtering. Nuclear Instruments and Methods. 167(1). 71–72. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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