H. Mejri

573 total citations
39 papers, 473 citations indexed

About

H. Mejri is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. Mejri has authored 39 papers receiving a total of 473 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Atomic and Molecular Physics, and Optics, 26 papers in Electrical and Electronic Engineering and 15 papers in Materials Chemistry. Recurrent topics in H. Mejri's work include Semiconductor Quantum Structures and Devices (24 papers), GaN-based semiconductor devices and materials (13 papers) and Semiconductor materials and interfaces (9 papers). H. Mejri is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), GaN-based semiconductor devices and materials (13 papers) and Semiconductor materials and interfaces (9 papers). H. Mejri collaborates with scholars based in Tunisia, France and Algeria. H. Mejri's co-authors include H. Mâaref, Nejeh Jaba, S. Alaya, L. Bouzaı̈ene, M. Saïd, Hafedh Belmabrouk, Fraj Echouchene, A. Selmi, N. Bouarissa and J.‐L. Lazzari and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics Condensed Matter and Journal of Alloys and Compounds.

In The Last Decade

H. Mejri

38 papers receiving 458 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Mejri Tunisia	13	245	228	216	183	81	39	473
J. Rennie Japan	11	269 1.1×	224 1.0×	197 0.9×	226 1.2×	39 0.5×	35	462
D. Moutonnet France	9	174 0.7×	432 1.9×	499 2.3×	257 1.4×	43 0.5×	25	691
D. Eisert Germany	12	189 0.8×	262 1.1×	249 1.2×	189 1.0×	30 0.4×	26	444
G. V. Kozlov Russia	6	106 0.4×	114 0.5×	169 0.8×	123 0.7×	37 0.5×	16	360
J. Dazord France	12	181 0.7×	271 1.2×	124 0.6×	34 0.2×	64 0.8×	47	416
F. Saidi Tunisia	15	566 2.3×	535 2.3×	339 1.6×	98 0.5×	44 0.5×	77	791
M. Razeghi France	10	246 1.0×	266 1.2×	144 0.7×	191 1.0×	9 0.1×	32	471
T.W. Kim South Korea	12	149 0.6×	296 1.3×	336 1.6×	37 0.2×	40 0.5×	63	485
H. Weibel Switzerland	9	126 0.5×	132 0.6×	294 1.4×	77 0.4×	79 1.0×	14	381
Hisashi Katahama Japan	13	278 1.1×	423 1.9×	186 0.9×	43 0.2×	38 0.5×	37	521

Countries citing papers authored by H. Mejri

Since Specialization

Citations

This map shows the geographic impact of H. Mejri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Mejri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Mejri more than expected).

Fields of papers citing papers by H. Mejri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Mejri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Mejri. The network helps show where H. Mejri may publish in the future.

Co-authorship network of co-authors of H. Mejri

This figure shows the co-authorship network connecting the top 25 collaborators of H. Mejri. A scholar is included among the top collaborators of H. Mejri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Mejri. H. Mejri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Echouchene, Fraj, et al.. (2015). Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. Materials Science in Semiconductor Processing. 40. 424–428. 33 indexed citations

Mejri, H., et al.. (2015). Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors. Superlattices and Microstructures. 84. 113–125. 18 indexed citations

Mejri, H., et al.. (2010). The electronic states calculated using the sinusoidal potential for Cd1−xZnxS quantum dot superlattices. Journal of Alloys and Compounds. 509(5). 2493–2495. 11 indexed citations

Gassoumi, M., et al.. (2009). Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors. Journal of Applied Physics. 106(5). 25 indexed citations

Bouzaı̈ene, L., et al.. (2007). Refractive index changes in AlGaN/GaN heterostructure field-effect transistors. Materials Science and Engineering C. 28(5-6). 831–834. 13 indexed citations

Bouzaı̈ene, L., et al.. (2006). Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors. Solid State Communications. 140(6). 308–312. 22 indexed citations

Mejri, H., et al.. (2006). Electronic and optical properties of Cd1-xZnxS nanocrystals. The European Physical Journal B. 51(1). 75–78. 10 indexed citations

Ajjel, Ridha, et al.. (2004). Excitonic recombination processes in GaAs grown by close-space vapour transport. Microelectronics Journal. 35(7). 577–580. 1 indexed citations

Mejri, H., et al.. (2002). Electronic band parameters for zinc-blende Al1$minus$xGaxN. Journal of Physics Condensed Matter. 14(29). 7017–7026. 23 indexed citations

10.

Jaba, Nejeh, et al.. (2001). Effects of Activator Ion Concentration on the Upconversion Processes in Er3+-Doped TeO2-ZnO Glass. physica status solidi (a). 188(3). 1145–1151. 20 indexed citations

11.

Hjiri, M., H. Mejri, F. Hassen, et al.. (2000). Growth temperature effects on the optical properties of Si modulation-doped InxGa1−xAs/InyAl1−yAs/InP heterostructures. Microelectronic Engineering. 51-52. 461–467. 1 indexed citations

12.

Jaba, Nejeh, et al.. (2000). Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses. Journal of Physics Condensed Matter. 12(20). 4523–4534. 73 indexed citations

13.

Mejri, H., et al.. (2000). Statistical analysis in the negative-U model of donors in AlxGa1−xAs:Si. Journal of Applied Physics. 88(5). 2583–2587. 8 indexed citations

14.

Mejri, H., et al.. (1997). Effects of the DX center multiplicity on the transport properties of AlxGa1−xAs:Si. Journal of Applied Physics. 82(11). 5509–5512. 4 indexed citations

15.

Mejri, H., et al.. (1997). Stark effect studied in -doped GaAs structures. Semiconductor Science and Technology. 12(11). 1388–1395. 49 indexed citations

16.

Mejri, H., S. Alaya, H. Mâaref, et al.. (1995). Intrinsic and extrinsic radiative recombination processes in quantum wells. Journal of Luminescence. 65(1). 11–17. 1 indexed citations

17.

Mâaref, H., H. Mejri, C. Priester, et al.. (1993). Photocurrent and photoluminescence from quantum-confined electrons in periodically δ-doped Si-GaAs. Journal of Applied Physics. 74(3). 1987–1991. 5 indexed citations

18.

Mejri, H., et al.. (1991). The DX center in Si-planar-doped AlxGa1−xAs (x=0.32). Journal of Applied Physics. 69(7). 4060–4063. 7 indexed citations

19.

Mejri, H., S. Alaya, H. Mâaref, J. C. Bourgoin, & B. Etienne. (1990). Photoluminescence studies of planar-doped Al_xGa_1-xAs. Semiconductor Science and Technology. 5(8). 900–904. 4 indexed citations

20.

Mejri, H. & H. Mâaref. (1990). Time-resolved spectra of the 1.55-eV band in Ge-doped AlxGa1−xAs. Journal of Applied Physics. 67(7). 3485–3489. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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