L. Shterengas

2.4k total citations
140 papers, 1.8k citations indexed

About

L. Shterengas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, L. Shterengas has authored 140 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 135 papers in Electrical and Electronic Engineering, 109 papers in Atomic and Molecular Physics, and Optics and 60 papers in Spectroscopy. Recurrent topics in L. Shterengas's work include Semiconductor Quantum Structures and Devices (97 papers), Semiconductor Lasers and Optical Devices (89 papers) and Spectroscopy and Laser Applications (60 papers). L. Shterengas is often cited by papers focused on Semiconductor Quantum Structures and Devices (97 papers), Semiconductor Lasers and Optical Devices (89 papers) and Spectroscopy and Laser Applications (60 papers). L. Shterengas collaborates with scholars based in United States, Russia and Germany. L. Shterengas's co-authors include Gregory Belenky, G. Kipshidze, Takashi Hosoda, D. Donetsky, Wendy L. Sarney, Stefan P. Svensson, Ramon U. Martinelli, Youxi Lin, Sergey Suchalkin and Mikhail V. Kisin and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. Shterengas

132 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Shterengas United States 25 1.7k 1.4k 659 241 90 140 1.8k
H. C. Liu Canada 18 1.3k 0.8× 1.1k 0.8× 894 1.4× 178 0.7× 72 0.8× 51 1.7k
Yu. P. Yakovlev Russia 14 903 0.5× 794 0.6× 199 0.3× 248 1.0× 43 0.5× 214 1.1k
S. Tsao United States 17 1.0k 0.6× 679 0.5× 620 0.9× 244 1.0× 42 0.5× 33 1.2k
R. H. Miles United States 25 1.5k 0.9× 1.3k 0.9× 322 0.5× 408 1.7× 36 0.4× 55 1.6k
C. Alibert France 18 1.1k 0.7× 1.2k 0.9× 298 0.5× 225 0.9× 81 0.9× 70 1.5k
M. Yamanishi Japan 23 1.2k 0.7× 1.1k 0.8× 423 0.6× 223 0.9× 45 0.5× 92 1.6k
J. Abell United States 17 992 0.6× 515 0.4× 799 1.2× 135 0.6× 143 1.6× 47 1.3k
J. Walker United States 17 1.1k 0.7× 1.4k 1.0× 472 0.7× 177 0.7× 95 1.1× 35 1.6k
M. J. Steer United Kingdom 22 1.3k 0.8× 1.5k 1.1× 284 0.4× 607 2.5× 107 1.2× 61 1.7k
L. E. Vorobjev Russia 13 521 0.3× 517 0.4× 170 0.3× 141 0.6× 106 1.2× 98 717

Countries citing papers authored by L. Shterengas

Since Specialization
Citations

This map shows the geographic impact of L. Shterengas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Shterengas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Shterengas more than expected).

Fields of papers citing papers by L. Shterengas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Shterengas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Shterengas. The network helps show where L. Shterengas may publish in the future.

Co-authorship network of co-authors of L. Shterengas

This figure shows the co-authorship network connecting the top 25 collaborators of L. Shterengas. A scholar is included among the top collaborators of L. Shterengas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Shterengas. L. Shterengas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Shterengas, L., et al.. (2024). Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers. IEEE Journal of Selected Topics in Quantum Electronics. 31(2: Pwr. and Effic. Scaling in). 1–7.
3.
Liu, Jinghe, D. Donetsky, G. Kipshidze, et al.. (2020). Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures. Journal of Applied Physics. 128(8). 5 indexed citations
4.
Shterengas, L., et al.. (2019). Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m. Semiconductor Science and Technology. 35(2). 25016–25016. 3 indexed citations
5.
6.
Panevin, V. Yu., D. A. Firsov, L. E. Vorobjev, et al.. (2016). Polarization anisotropy of interband electroluminescence in narrow gap Sb-based semiconductors. 3. 1–2.
7.
Hosoda, Takashi, L. Shterengas, Aaron Stein, et al.. (2015). Narrow Ridge $\lambda \approx 3$ - $\mu \text{m}$ Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature. IEEE Photonics Technology Letters. 27(23). 2425–2428. 7 indexed citations
8.
Lin, Youxi, D. Donetsky, Ding Wang, et al.. (2015). Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors. Journal of Electronic Materials. 44(10). 3360–3366. 28 indexed citations
9.
Lin, Youxi, Ding Wang, D. Donetsky, et al.. (2014). Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors. Semiconductor Science and Technology. 29(11). 112002–112002. 9 indexed citations
10.
Liang, Rui, L. Shterengas, Takashi Hosoda, et al.. (2014). Diffraction limited 3.15μm cascade diode lasers. Semiconductor Science and Technology. 29(11). 115016–115016. 3 indexed citations
11.
Lin, Youxi, Ding Wang, D. Donetsky, et al.. (2013). Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices. Journal of Electronic Materials. 42(5). 918–926. 25 indexed citations
12.
Svensson, Stefan P., Wendy L. Sarney, H. Hier, et al.. (2012). Band gap of InAs1xSbxwith native lattice constant. Physical Review B. 86(24). 70 indexed citations
13.
Liang, Rui, Jianfeng Chen, G. Kipshidze, et al.. (2011). High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region. IEEE Photonics Technology Letters. 23(10). 603–605. 21 indexed citations
14.
Forouhar, Siamak, Clifford Frez, Kale J. Franz, et al.. (2010). Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7945. 79450M–79450M. 1 indexed citations
15.
Chen, Jiuhua, G. Kipshidze, L. Shterengas, et al.. (2009). 2.7-$\mu$m GaSb-Based Diode Lasers With Quinary Waveguide. IEEE Photonics Technology Letters. 21(16). 1112–1114. 7 indexed citations
16.
Okishev, A. V., David Westerfeld, L. Shterengas, & Gregory Belenky. (2009). A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility. Optics Express. 17(18). 15760–15760. 3 indexed citations
17.
Suchalkin, Sergey, L. Shterengas, Mikhail V. Kisin, et al.. (2005). Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers. Applied Physics Letters. 87(4). 7 indexed citations
18.
Shterengas, L., Jeng-Ya Yeh, L. J. Mawst, Nelson Tansu, & Gregory Belenky. (2004). Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers. Conference on Lasers and Electro-Optics. 1. 1 indexed citations
19.
Shterengas, L., et al.. (2004). Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with   > 2.5 µm. Semiconductor Science and Technology. 19(5). 655–658. 69 indexed citations
20.
Shterengas, L., et al.. (2003). High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers. Applied Physics Letters. 83(10). 1926–1928. 50 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026