H. G. Çetinkaya

669 total citations
26 papers, 596 citations indexed

About

H. G. Çetinkaya is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. G. Çetinkaya has authored 26 papers receiving a total of 596 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Atomic and Molecular Physics, and Optics, 22 papers in Electrical and Electronic Engineering and 11 papers in Materials Chemistry. Recurrent topics in H. G. Çetinkaya's work include Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H. G. Çetinkaya is often cited by papers focused on Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H. G. Çetinkaya collaborates with scholars based in Türkiye and Saudi Arabia. H. G. Çetinkaya's co-authors include Ş. Altındal, S. Demirezen, Ş. Altındal, Ahmet Kaya, İ. Uslu, F. Yakuphanoğlu, Habibe Uslu, Mehmet Kara, H. Tecimer and Ömer Sevgi̇li̇ and has published in prestigious journals such as Journal of Alloys and Compounds, Sensors and Actuators A Physical and Applied Physics A.

In The Last Decade

H. G. Çetinkaya

26 papers receiving 587 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. G. Çetinkaya Türkiye 16 487 476 272 86 75 26 596
Esra Erbilen Tanrıkulu Türkiye 15 436 0.9× 441 0.9× 220 0.8× 66 0.8× 74 1.0× 24 535
Yasemin Şafak Türkiye 14 461 0.9× 489 1.0× 241 0.9× 48 0.6× 54 0.7× 19 573
T. Asar Türkiye 12 233 0.5× 311 0.7× 205 0.8× 52 0.6× 64 0.9× 28 382
Hati̇ce Kaçuş Türkiye 14 251 0.5× 310 0.7× 189 0.7× 90 1.0× 94 1.3× 25 387
Hazem K. Khanfar Palestinian Territory 10 129 0.3× 272 0.6× 239 0.9× 56 0.7× 42 0.6× 56 339
Durmuş Ali Aldemir Türkiye 12 321 0.7× 360 0.8× 131 0.5× 48 0.6× 47 0.6× 37 407
I. Jyothi South Korea 16 377 0.8× 430 0.9× 222 0.8× 91 1.1× 43 0.6× 41 552
Hongbin Zhang China 9 276 0.6× 322 0.7× 548 2.0× 110 1.3× 41 0.5× 14 634
M. Terlemezoğlu Türkiye 13 147 0.3× 339 0.7× 302 1.1× 30 0.3× 44 0.6× 36 408
A. Tataroğlu Türkiye 12 602 1.2× 626 1.3× 219 0.8× 46 0.5× 69 0.9× 15 700

Countries citing papers authored by H. G. Çetinkaya

Since Specialization
Citations

This map shows the geographic impact of H. G. Çetinkaya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. G. Çetinkaya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. G. Çetinkaya more than expected).

Fields of papers citing papers by H. G. Çetinkaya

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. G. Çetinkaya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. G. Çetinkaya. The network helps show where H. G. Çetinkaya may publish in the future.

Co-authorship network of co-authors of H. G. Çetinkaya

This figure shows the co-authorship network connecting the top 25 collaborators of H. G. Çetinkaya. A scholar is included among the top collaborators of H. G. Çetinkaya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. G. Çetinkaya. H. G. Çetinkaya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Demirezen, S., A. Dere, H. G. Çetinkaya, Shehab A. Mansour, & F. Yakuphanoğlu. (2025). Interface and dielectric properties of Al/p-Si diode by organic composite interlayer for MOS. Journal of Materials Science Materials in Electronics. 36(14). 2 indexed citations
2.
Çetinkaya, H. G., Yosef Badalı, & Ş. Altındal. (2025). On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures. Journal of Materials Science Materials in Electronics. 36(15). 3 indexed citations
5.
Çetinkaya, H. G., et al.. (2024). The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures. Physica Scripta. 99(2). 25955–25955. 10 indexed citations
6.
Çetinkaya, H. G., et al.. (2023). On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs). Journal of Materials Science Materials in Electronics. 34(9). 20 indexed citations
8.
Demirezen, S., et al.. (2023). Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications. Physica Scripta. 98(11). 115916–115916. 10 indexed citations
9.
Demirezen, S., et al.. (2023). The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures. Journal of Materials Science Materials in Electronics. 34(14). 16 indexed citations
10.
Çetinkaya, H. G., et al.. (2023). Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications. Physica B Condensed Matter. 670. 415338–415338. 6 indexed citations
12.
Çetinkaya, H. G., S. Demirezen, & Seçkin Altındal Yerişkin. (2021). Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes. Physica B Condensed Matter. 621. 413207–413207. 35 indexed citations
13.
Demirezen, S., H. G. Çetinkaya, Mehmet Kara, F. Yakuphanoğlu, & Ş. Altındal. (2020). Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures. Sensors and Actuators A Physical. 317. 112449–112449. 80 indexed citations
14.
Çetinkaya, H. G., Ş. Altındal, İkram Orak, & İ. Uslu. (2017). Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer. Journal of Materials Science Materials in Electronics. 28(11). 7905–7911. 37 indexed citations
15.
Çetinkaya, H. G., et al.. (2017). Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures. Journal of Alloys and Compounds. 728. 896–901. 28 indexed citations
16.
Kaya, Ahmet, H. G. Çetinkaya, Ş. Altındal, & İ. Uslu. (2016). A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer. International Journal of Modern Physics B. 30(16). 1650090–1650090. 18 indexed citations
17.
Çetinkaya, H. G., Ahmet Kaya, Ş. Altındal, & Serhat Koçyığıt. (2015). Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage. Canadian Journal of Physics. 93(10). 1213–1220. 15 indexed citations
18.
Çetinkaya, H. G., et al.. (2015). Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis. Journal of Materials Science Materials in Electronics. 26(5). 3186–3195. 33 indexed citations
19.
Çetinkaya, H. G., Dilber Esra Yıldız, & Ş. Altındal. (2014). On the negative capacitance behavior in the forward bias of Au/n–4HSiC (MS) and comparison between MS and Au/TiO2/n–4HSiC (MIS) type diodes both in dark and under 200 W illumination intensity. International Journal of Modern Physics B. 29(1). 1450237–1450237. 19 indexed citations
20.
Çetinkaya, H. G., H. Tecimer, Habibe Uslu, & Ş. Altındal. (2013). Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures. Current Applied Physics. 13(6). 1150–1156. 64 indexed citations

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