I. Jyothi

630 total citations
41 papers, 552 citations indexed

About

I. Jyothi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, I. Jyothi has authored 41 papers receiving a total of 552 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Atomic and Molecular Physics, and Optics, 33 papers in Electrical and Electronic Engineering and 14 papers in Materials Chemistry. Recurrent topics in I. Jyothi's work include Semiconductor materials and interfaces (34 papers), Semiconductor materials and devices (28 papers) and GaN-based semiconductor devices and materials (13 papers). I. Jyothi is often cited by papers focused on Semiconductor materials and interfaces (34 papers), Semiconductor materials and devices (28 papers) and GaN-based semiconductor devices and materials (13 papers). I. Jyothi collaborates with scholars based in South Korea, India and United States. I. Jyothi's co-authors include Chel‐Jong Choi, V. Janardhanam, V. Rajagopal Reddy, Sung‐Nam Lee, Hyobong Hong, Kyu-Hwan Shim, Kwang‐Soon Ahn, Hyung‐Joong Yun, P.R. Sekhar Reddy and Jae‐chan Jeong and has published in prestigious journals such as Applied Surface Science, Journal of Alloys and Compounds and Thin Solid Films.

In The Last Decade

I. Jyothi

41 papers receiving 538 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Jyothi South Korea 16 430 377 222 101 91 41 552
A. Ashok Kumar India 14 594 1.4× 632 1.7× 195 0.9× 70 0.7× 97 1.1× 45 722
Yuanxun Liao China 10 244 0.6× 194 0.5× 376 1.7× 117 1.2× 112 1.2× 24 538
Gregory Brown United States 9 312 0.7× 176 0.5× 242 1.1× 62 0.6× 135 1.5× 12 485
Yasemin Şafak Türkiye 14 489 1.1× 461 1.2× 241 1.1× 46 0.5× 48 0.5× 19 573
Jong H. Na Japan 13 376 0.9× 118 0.3× 263 1.2× 80 0.8× 87 1.0× 16 530
Zakaria Djebbour France 15 360 0.8× 125 0.3× 305 1.4× 107 1.1× 86 0.9× 40 537
Baoxue Bo China 10 361 0.8× 215 0.6× 156 0.7× 31 0.3× 47 0.5× 80 422
Kadir Ejderha Türkiye 15 553 1.3× 532 1.4× 207 0.9× 30 0.3× 90 1.0× 29 623
Biplab Bhattacharyya India 12 252 0.6× 129 0.3× 363 1.6× 118 1.2× 75 0.8× 14 460
Halit Altuntaş Türkiye 12 315 0.7× 224 0.6× 235 1.1× 119 1.2× 67 0.7× 26 454

Countries citing papers authored by I. Jyothi

Since Specialization
Citations

This map shows the geographic impact of I. Jyothi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Jyothi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Jyothi more than expected).

Fields of papers citing papers by I. Jyothi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Jyothi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Jyothi. The network helps show where I. Jyothi may publish in the future.

Co-authorship network of co-authors of I. Jyothi

This figure shows the co-authorship network connecting the top 25 collaborators of I. Jyothi. A scholar is included among the top collaborators of I. Jyothi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Jyothi. I. Jyothi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Janardhanam, V., I. Jyothi, Suman Pokhrel, & Chel‐Jong Choi. (2024). Fermi-level depinning of Ge surface using hydrogen plasma-immersion ion implantation. Journal of Alloys and Compounds. 1010. 177972–177972. 1 indexed citations
2.
Janardhanam, V., Jong-Hee Kim, I. Jyothi, et al.. (2024). Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment. Colloids and Surfaces A Physicochemical and Engineering Aspects. 693. 134079–134079. 4 indexed citations
3.
Janardhanam, V., et al.. (2023). Self-powered MoS2/n-type GaN heterojunction photodetector with broad spectral response in ultraviolet–visible–near-infrared range. Sensors and Actuators A Physical. 360. 114534–114534. 9 indexed citations
4.
Janardhanam, V., Jong-Hee Kim, I. Jyothi, et al.. (2023). Carrier transport across PtSe2/n-type GaN heterojunction. Vacuum. 218. 112597–112597. 9 indexed citations
5.
Pavani, Mario, et al.. (2023). Electrical, optical and morphological properties of Au/n-Ge heterostructures by using cobalt phthalocyanine (CoPc) interlayer. Materials Today Communications. 35. 106360–106360. 9 indexed citations
6.
Kumar, A. Ashok, et al.. (2023). Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications. Materials Science and Engineering B. 300. 117102–117102. 3 indexed citations
7.
Janardhanam, V., et al.. (2022). Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties. Journal of Alloys and Compounds. 918. 165622–165622. 13 indexed citations
8.
Janardhanam, V., et al.. (2021). Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction. Materials Letters. 296. 129893–129893. 10 indexed citations
9.
Janardhanam, V., et al.. (2021). High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer. Surfaces and Interfaces. 27. 101405–101405. 19 indexed citations
10.
Janardhanam, V., I. Jyothi, Sung‐Nam Lee, V. Rajagopal Reddy, & Chel‐Jong Choi. (2019). Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization. Thin Solid Films. 676. 125–132. 25 indexed citations
11.
Janardhanam, V., I. Jyothi, P.R. Sekhar Reddy, et al.. (2018). Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN. Superlattices and Microstructures. 120. 508–516. 19 indexed citations
12.
Janardhanam, V., I. Jyothi, Jonghee Lee, et al.. (2017). Electrical properties of a Cu-germanide Schottky contact to n-type Ge depending on its microstructural evolution driven by rapid thermal annealing. Thin Solid Films. 632. 23–27. 2 indexed citations
13.
Lee, Hoon-Ki, I. Jyothi, V. Janardhanam, et al.. (2016). Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode. Microelectronic Engineering. 163. 26–31. 23 indexed citations
14.
Janardhanam, V., et al.. (2014). Electrical Properties and Carrier Transport Mechanism of Au/<i>n</i>-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer. MATERIALS TRANSACTIONS. 55(5). 758–762. 12 indexed citations
15.
Jyothi, I., et al.. (2014). Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier. Materials Science in Semiconductor Processing. 30. 420–428. 21 indexed citations
16.
Jyothi, I., et al.. (2014). Electrical and Microstructural Characterization of Cu-Germanide Contacts Formed on p-Type Ge Substrate. ECS Transactions. 64(6). 159–165. 4 indexed citations
17.
Jyothi, I., et al.. (2013). Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator. MATERIALS TRANSACTIONS. 54(9). 1655–1660. 30 indexed citations
18.
Janardhanam, V., I. Jyothi, Kwang‐Soon Ahn, & Chel‐Jong Choi. (2013). Temperature-dependent current–voltage characteristics of Se Schottky contact to n-type Ge. Thin Solid Films. 546. 63–68. 42 indexed citations
19.
Jyothi, I. & V. Rajagopal Reddy. (2010). Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN. Applied Surface Science. 257(1). 67–71. 4 indexed citations
20.
Jyothi, I., V. Rajagopal Reddy, & Chel‐Jong Choi. (2010). Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface. Journal of Materials Science Materials in Electronics. 22(3). 286–291. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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