Guoguo Yan

484 total citations
47 papers, 377 citations indexed

About

Guoguo Yan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Guoguo Yan has authored 47 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 23 papers in Electronic, Optical and Magnetic Materials and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Guoguo Yan's work include Silicon Carbide Semiconductor Technologies (42 papers), Semiconductor materials and devices (28 papers) and Copper Interconnects and Reliability (19 papers). Guoguo Yan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (42 papers), Semiconductor materials and devices (28 papers) and Copper Interconnects and Reliability (19 papers). Guoguo Yan collaborates with scholars based in China, Australia and United States. Guoguo Yan's co-authors include Xingfang Liu, Guosheng Sun, Feng Zhang, Wanshun Zhao, Yiping Zeng, Yiping Zeng, Zheng Liu, Lin Dong, Lei Wang and Xiguang Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

In The Last Decade

Guoguo Yan

45 papers receiving 358 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Guoguo Yan China 12 315 129 104 55 31 47 377
Alessandro Veneroni Italy 10 251 0.8× 84 0.7× 57 0.5× 40 0.7× 13 0.4× 19 313
An-Chen Liu Taiwan 8 176 0.6× 89 0.7× 93 0.9× 24 0.4× 81 2.6× 16 253
Catherine Langpoklakpam Taiwan 7 185 0.6× 117 0.9× 122 1.2× 33 0.6× 112 3.6× 16 307
Y. Senzaki United States 11 404 1.3× 51 0.4× 168 1.6× 42 0.8× 14 0.5× 24 445
M. Higashihata Japan 12 204 0.6× 120 0.9× 266 2.6× 25 0.5× 35 1.1× 30 316
Akinori Takeyama Japan 8 235 0.7× 112 0.9× 116 1.1× 27 0.5× 55 1.8× 28 328
Takamitsu Kawahara Japan 11 430 1.4× 151 1.2× 36 0.3× 69 1.3× 12 0.4× 22 442
Tomo Ueno Japan 11 288 0.9× 61 0.5× 217 2.1× 61 1.1× 7 0.2× 36 358
François Cauwet France 12 376 1.2× 120 0.9× 105 1.0× 63 1.1× 14 0.5× 55 459
Zonglun Li China 10 164 0.5× 51 0.4× 220 2.1× 20 0.4× 11 0.4× 31 292

Countries citing papers authored by Guoguo Yan

Since Specialization
Citations

This map shows the geographic impact of Guoguo Yan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guoguo Yan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guoguo Yan more than expected).

Fields of papers citing papers by Guoguo Yan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guoguo Yan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guoguo Yan. The network helps show where Guoguo Yan may publish in the future.

Co-authorship network of co-authors of Guoguo Yan

This figure shows the co-authorship network connecting the top 25 collaborators of Guoguo Yan. A scholar is included among the top collaborators of Guoguo Yan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Guoguo Yan. Guoguo Yan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Yunkai, Jingyi Jiao, Lei Wang, et al.. (2025). Stress-induced cracks in triangular defects of thick 4H-SiC homoepitaxial layers. Vacuum. 234. 114077–114077. 2 indexed citations
2.
Li, Yunkai, et al.. (2025). Pressure-driven growth mechanisms and uniformity analysis of β-Ga2O3/4H-SiC heteroepitaxy. Surfaces and Interfaces. 66. 106607–106607. 1 indexed citations
3.
4.
Li, Yunkai, et al.. (2024). Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation. Materials Today Communications. 40. 110083–110083. 1 indexed citations
5.
Li, Yunkai, et al.. (2024). Growth behavior of cristobalite SiO2 coating on 4H–SiC surface via high-temperature oxidation. Ceramics International. 50(18). 33968–33978. 3 indexed citations
6.
Chen, Junhong, Guoguo Yan, Wanshun Zhao, et al.. (2023). Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS). Journal of Crystal Growth. 612. 127058–127058. 9 indexed citations
7.
Guo, Ning, et al.. (2023). Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing. Semiconductor Science and Technology. 38(11). 115001–115001. 1 indexed citations
8.
Chen, Junhong, Yunkai Li, Guoguo Yan, et al.. (2023). Electrochemical etching modes of 4H-SiC in KOH solutions. Semiconductor Science and Technology. 38(5). 55019–55019. 6 indexed citations
9.
Yan, Guoguo, et al.. (2022). Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation. Semiconductor Science and Technology. 37(10). 105009–105009. 5 indexed citations
10.
Yan, Guoguo, et al.. (2022). Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions. Coatings. 12(5). 597–597. 6 indexed citations
11.
12.
Yan, Guoguo, Wanshun Zhao, Lei Wang, et al.. (2019). Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling. Journal of Crystal Growth. 531. 125352–125352. 1 indexed citations
13.
Zhang, Feng, Guoguo Yan, Wanshun Zhao, et al.. (2018). Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss. Griffith Research Online (Griffith University, Queensland, Australia). 118–122. 3 indexed citations
14.
Yan, Guoguo, Feng Zhang, Fei Yang, et al.. (2015). Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates. Applied Surface Science. 353. 744–749. 6 indexed citations
15.
Liu, Zheng, Guosheng Sun, Feng Zhang, et al.. (2013). Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface. Applied Surface Science. 280. 500–503. 1 indexed citations
16.
Liu, Bin, Guosheng Sun, Xingfang Liu, et al.. (2013). Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System. Chinese Physics Letters. 30(12). 128101–128101. 10 indexed citations
17.
Dong, Lin, Guosheng Sun, Xingfang Liu, et al.. (2013). Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers. Chinese Physics Letters. 30(9). 96105–96105. 13 indexed citations
18.
Sun, Guosheng, Xingfang Liu, Guoguo Yan, et al.. (2011). Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement. Chinese Physics B. 20(3). 33301–33301. 12 indexed citations
19.
Yan, Guoguo, et al.. (2011). Multi-wafer 3C-SiC thin films grown on Si (100) in a vertical HWLPCVD reactor. Journal of Semiconductors. 32(6). 63001–63001. 5 indexed citations
20.
Sun, Guosheng, Guoguo Yan, Lei Wang, et al.. (2010). Raman scattering investigation of defects in thick homoepitaxial 4H-SiC films. 72. 1569–1571. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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