G. Morgenstern

428 total citations
27 papers, 277 citations indexed

About

G. Morgenstern is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Morgenstern has authored 27 papers receiving a total of 277 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in G. Morgenstern's work include Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and interfaces (12 papers) and Silicon Nanostructures and Photoluminescence (9 papers). G. Morgenstern is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and interfaces (12 papers) and Silicon Nanostructures and Photoluminescence (9 papers). G. Morgenstern collaborates with scholars based in Germany. G. Morgenstern's co-authors include M. Kittler, W. Seifert, J. E. West, D. A. Berkley, D. Krüger, P. Zaumseil, G. Ritter, Bernd Tillack, Hans Richter and T. Morgenstern and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Morgenstern

24 papers receiving 252 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Morgenstern Germany 8 240 123 98 30 18 27 277
Huade Yao United States 7 256 1.1× 197 1.6× 86 0.9× 54 1.8× 30 1.7× 19 325
R. Surridge Canada 11 286 1.2× 105 0.9× 28 0.3× 49 1.6× 17 0.9× 30 312
C. Ransom United States 10 221 0.9× 107 0.9× 57 0.6× 27 0.9× 13 0.7× 20 265
P. E. R. Nordquist United States 7 261 1.1× 130 1.1× 67 0.7× 13 0.4× 15 0.8× 21 301
G. Giroult-Matlakowski France 6 334 1.4× 108 0.9× 96 1.0× 36 1.2× 7 0.4× 12 354
D.H. Reep United States 6 252 1.1× 225 1.8× 93 0.9× 56 1.9× 25 1.4× 11 345
J. Guldberg Denmark 8 266 1.1× 138 1.1× 60 0.6× 26 0.9× 16 0.9× 12 301
Takayuki Funatsu Japan 6 264 1.1× 119 1.0× 64 0.7× 21 0.7× 21 1.2× 13 309
J. K. Shurtleff United States 12 266 1.1× 307 2.5× 97 1.0× 44 1.5× 16 0.9× 16 368
W. Krull United States 10 284 1.2× 48 0.4× 74 0.8× 26 0.9× 46 2.6× 68 323

Countries citing papers authored by G. Morgenstern

Since Specialization
Citations

This map shows the geographic impact of G. Morgenstern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Morgenstern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Morgenstern more than expected).

Fields of papers citing papers by G. Morgenstern

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Morgenstern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Morgenstern. The network helps show where G. Morgenstern may publish in the future.

Co-authorship network of co-authors of G. Morgenstern

This figure shows the co-authorship network connecting the top 25 collaborators of G. Morgenstern. A scholar is included among the top collaborators of G. Morgenstern based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Morgenstern. G. Morgenstern is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Stelter, Michael, et al.. (2015). Recycling von nickelhaltigen Katalysatoren. Chemie Ingenieur Technik. 87(11). 1543–1549.
2.
Kissinger, G., T. Grabolla, G. Morgenstern, et al.. (1999). Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing. Journal of The Electrochemical Society. 146(5). 1971–1976. 9 indexed citations
3.
Tillack, Bernd, H. Richter, G. Ritter, et al.. (1996). Monitoring of deposition and dry etching of Si/SiGe multiple stacks. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(1). 102–105. 3 indexed citations
4.
Kissinger, G., et al.. (1995). Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 47-48. 529–534. 2 indexed citations
5.
Tillack, Bernd, P. Zaumseil, G. Morgenstern, D. Krüger, & G. Ritter. (1995). Strain compensation in Si1−xGex by heavy boron doping. Applied Physics Letters. 67(8). 1143–1144. 32 indexed citations
6.
Tillack, Bernd, P. Zaumseil, G. Morgenstern, et al.. (1995). Strain compensation in ternary Si1 − x − yGexBy films. Journal of Crystal Growth. 157(1-4). 181–184. 15 indexed citations
7.
Morgenstern, T., et al.. (1995). Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001). Applied Physics Letters. 66(16). 2083–2085. 21 indexed citations
8.
Tillack, Bernd, et al.. (1995). Sharp boron doping within thin SiGe layer by rapid thermal chemical vapour deposition. Materials Science and Technology. 11(10). 1060–1064. 5 indexed citations
9.
Kissinger, G., G. Morgenstern, & Hans Richter. (1993). Cu precipitation in oxidized wafers with and without a GexSi1−x heteroepitaxial layer. Journal of materials research/Pratt's guide to venture capital sources. 8(8). 1900–1907. 2 indexed citations
10.
Morgenstern, G., K. Schmalz, P. Gaworzewski, et al.. (1993). Deposition and P Doping of Si<sub>(1-x)</sub>Ge<sub>x</sub> Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 32-33. 409–416. 2 indexed citations
11.
Kissinger, G., G. Morgenstern, & Hans Richter. (1993). The gettering efficiency of a direct bonded interface. Journal of Applied Physics. 74(11). 6576–6579. 3 indexed citations
12.
Kittler, M., W. Seifert, & G. Morgenstern. (1993). Annealing‐Induced Changes of Recombination in Cast Polycrystalline Silicon. Journal of The Electrochemical Society. 140(2). 556–560. 7 indexed citations
13.
Seifert, W., G. Morgenstern, & M. Kittler. (1993). Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon. Semiconductor Science and Technology. 8(9). 1687–1691. 58 indexed citations
14.
Skorupa, W., et al.. (1993). Iron gettering and doping in silicon due to MeV carbon implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(1-2). 70–74. 11 indexed citations
15.
Skorupa, W., R. Kögler, M. Voelskow, et al.. (1992). MeV carbon implantation into silicon: microstructure and electrical properties. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 68(1-4). 408–412. 5 indexed citations
16.
Kittler, M., et al.. (1991). CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC. Journal de Physique IV (Proceedings). 1(C6). C6–173. 4 indexed citations
17.
18.
West, J. E., et al.. (1977). Determination of Spatial Distribution of Charges in Thin Dielectrics. Physical Review Letters. 38(7). 368–371. 70 indexed citations
19.
Morgenstern, G.. (1976). Das Strom-Spannungs-Widerstands-Ersatzschaltbild von Elektreten. Applied Physics A. 9(3). 209–215. 3 indexed citations
20.
Morgenstern, G.. (1976). Anwendung des Energieprinzips auf die Berechnung der Kraft auf den Elektreten in einem Schlitzwandler. Applied Physics A. 11(4). 371–375. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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