G. Kaufel

692 total citations
70 papers, 500 citations indexed

About

G. Kaufel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, G. Kaufel has authored 70 papers receiving a total of 500 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 7 papers in Spectroscopy. Recurrent topics in G. Kaufel's work include Semiconductor Lasers and Optical Devices (48 papers), Photonic and Optical Devices (39 papers) and Semiconductor Quantum Structures and Devices (29 papers). G. Kaufel is often cited by papers focused on Semiconductor Lasers and Optical Devices (48 papers), Photonic and Optical Devices (39 papers) and Semiconductor Quantum Structures and Devices (29 papers). G. Kaufel collaborates with scholars based in Germany, United States and France. G. Kaufel's co-authors include J. Wagner, B. Raynor, M.T. Kelemen, Marcel Rattunde, A. Hülsmann, J. Schmitz, K. Köhler, J. Weber, M. Mikulla and W. Bronner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

G. Kaufel

68 papers receiving 482 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Kaufel Germany 12 488 259 67 29 13 70 500
Jason J. Plant United States 17 745 1.5× 554 2.1× 54 0.8× 24 0.8× 9 0.7× 82 782
M. Schlak Germany 11 536 1.1× 224 0.9× 131 2.0× 25 0.9× 9 0.7× 28 547
P. L. Derry United States 9 302 0.6× 273 1.1× 32 0.5× 13 0.4× 14 1.1× 14 328
K. Kasaya Japan 15 798 1.6× 364 1.4× 64 1.0× 41 1.4× 12 0.9× 40 811
D. Coblentz United States 15 720 1.5× 604 2.3× 81 1.2× 32 1.1× 24 1.8× 46 746
M. Krakowski France 13 370 0.8× 346 1.3× 44 0.7× 15 0.5× 19 1.5× 60 435
M. Grau Germany 8 370 0.8× 288 1.1× 174 2.6× 17 0.6× 17 1.3× 19 390
H. Oohashi Japan 17 906 1.9× 483 1.9× 54 0.8× 34 1.2× 15 1.2× 74 950
J. Lopez United States 8 300 0.6× 231 0.9× 37 0.6× 11 0.4× 15 1.2× 17 314
K. Magari Japan 21 997 2.0× 538 2.1× 94 1.4× 18 0.6× 5 0.4× 73 1.0k

Countries citing papers authored by G. Kaufel

Since Specialization
Citations

This map shows the geographic impact of G. Kaufel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Kaufel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Kaufel more than expected).

Fields of papers citing papers by G. Kaufel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Kaufel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Kaufel. The network helps show where G. Kaufel may publish in the future.

Co-authorship network of co-authors of G. Kaufel

This figure shows the co-authorship network connecting the top 25 collaborators of G. Kaufel. A scholar is included among the top collaborators of G. Kaufel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Kaufel. G. Kaufel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rattunde, Marcel, J. Schmitz, G. Kaufel, et al.. (2008). Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 $\mu$m. IEEE Journal of Quantum Electronics. 44(11). 1071–1075. 3 indexed citations
2.
Rattunde, Marcel, et al.. (2007). Micro-mechanical external-cavity laser with wide tuning range. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 5738. 731–734. 1 indexed citations
3.
Rattunde, Marcel, et al.. (2006). Low-threshold, low beam divergence GaSb-based quantum-well diode-lasers emitting in the 1.9 to 2.4 μm wavelength range. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 98–98. 1 indexed citations
4.
Yang, Quankui, W. Bronner, C. Manz, et al.. (2005). Continuous-wave operation of GaInAs-AlGaAsSb quantum cascade lasers. IEEE Photonics Technology Letters. 17(11). 2283–2285. 9 indexed citations
5.
Kelemen, M.T., R. Aidam, R. Lösch, et al.. (2004). High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 2. 473–474. 2 indexed citations
6.
7.
Lang, M., W. Bronner, W. Benz, et al.. (2001). Complete monolithic integrated 2.5 Gbit/s optoelectronicreceiverwithlarge area MSM photodiode for 850 nm wavelength. Electronics Letters. 37(20). 1247–1249. 8 indexed citations
8.
Berroth, Manfred, A. Thiede, G. Kaufel, et al.. (1997). Low power 20 Gbit/s data decision and 17 GHz staticfrequency divider ICs with 1.5 V supply voltage. Electronics Letters. 33(4). 289–290. 2 indexed citations
9.
Thiede, A., et al.. (1997). Sub-nanosecond access time 2 k sine-cosine-ROM inAlGaAs/GaAs/AlGaAs quantum well HEMT technology. Electronics Letters. 33(5). 428–429. 1 indexed citations
10.
Berroth, Manfred, A. Thiede, A. Hülsmann, et al.. (1996). Low power data decision IC for 20–40 Gbit/sdata links using 0.2 µm AlGaAs/GaAs HEMTs. Electronics Letters. 32(20). 1855–1856. 6 indexed citations
11.
Lang, M., et al.. (1995). 30 GHz static frequency divider using a0.2 µm AlGaAs/GaAs/AlGaAs HEMT technology. Electronics Letters. 31(24). 2111–2112. 5 indexed citations
12.
Rosenzweig, J., et al.. (1993). Optical control of pseudomorphic HEMT‐based MMIC oscillators. Microwave and Optical Technology Letters. 6(1). 36–38. 5 indexed citations
13.
Zappe, Hans & G. Kaufel. (1991). Reactive-ion-etch damage in GaAs processing evaluated by a microwave absorption technique. Applied Surface Science. 50(1-4). 290–294.
14.
Kaufel, G., et al.. (1991). 14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology. Electronics Letters. 27(13). 1173–1175. 1 indexed citations
15.
Zappe, Hans & G. Kaufel. (1991). Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures. MRS Proceedings. 223. 1 indexed citations
16.
Hurm, V., J. Rosenzweig, M. Ludwig, et al.. (1991). 10 Gbit/s Monolithic Integrated Msm-Photodiode AlGaAs/GaAs-Hemt Optoelectronic Receiver. OPUS Publication Server of the University of Stuttgart (University of Stuttgart). 112. VA_1–0_64. 1 indexed citations
17.
Kaufel, G., B. Raynor, Klaus Koehler, et al.. (1991). Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1465. 201–201. 11 indexed citations
18.
19.
Hülsmann, A., G. Kaufel, K. Köhler, et al.. (1990). E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits. Japanese Journal of Applied Physics. 29(10R). 2317–2317. 37 indexed citations
20.
Kaufel, G., et al.. (1989). Etching of GaAs on AlGaAs in Rie-Mode. MRS Proceedings. 158. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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