Fang Wang

4.9k total citations · 1 hit paper
162 papers, 2.9k citations indexed

About

Fang Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Fang Wang has authored 162 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 93 papers in Electrical and Electronic Engineering, 70 papers in Materials Chemistry and 28 papers in Biomedical Engineering. Recurrent topics in Fang Wang's work include Advanced Memory and Neural Computing (59 papers), Ferroelectric and Negative Capacitance Devices (36 papers) and 2D Materials and Applications (27 papers). Fang Wang is often cited by papers focused on Advanced Memory and Neural Computing (59 papers), Ferroelectric and Negative Capacitance Devices (36 papers) and 2D Materials and Applications (27 papers). Fang Wang collaborates with scholars based in China, United States and Singapore. Fang Wang's co-authors include Kailiang Zhang, Yulin Feng, Zhengchun Yang, John Wang, Shixiong Min, Yuqi Han, Yemei Han, Lei Feng, Yinping Miao and Zhitang Song and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Langmuir.

In The Last Decade

Fang Wang

149 papers receiving 2.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

2017 900 citations Kailiang Zhang, Yulin Feng et al. Journal of Materials Chemistry C profile →

Peers

Fang Wang

MC

EEE

PP

BE

EOMM

Jinyong Wang China

Wen Huang China

Chao Chen China

Zhiyu Hu China

Deok‐kee Kim South Korea

Ran Ding China

Gang Du China

Zhen Zhang China

Inho Kim South Korea

Ming Xu China

Jinyong Wang China

Fang Wang

1.9k ×1.2

MC

1.2k ×0.9

EEE

409 ×0.9

PP

980 ×2.3

BE

333 ×1.0

EOMM

Citations per year, relative to Fang Wang Fang Wang (= 1×) peers Jinyong Wang

Countries citing papers authored by Fang Wang

Since Specialization

Citations

This map shows the geographic impact of Fang Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fang Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fang Wang more than expected).

Fields of papers citing papers by Fang Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fang Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fang Wang. The network helps show where Fang Wang may publish in the future.

Co-authorship network of co-authors of Fang Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Fang Wang. A scholar is included among the top collaborators of Fang Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fang Wang. Fang Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Chen, Kai, Xiu-Mei Sun, Mingjun Zhang, et al.. (2025). 3D printed bismuth sodium titanate/hydroxyapatite piezoelectric ceramics: as an alternative material for bone repair. Materials Today Communications. 44. 112179–112179. 2 indexed citations

2.

Khan, M.I., et al.. (2025). First-principles investigation of Sc and Ti-decorated hBN monolayers as adsorbents and gas sensors for SF6 decomposition products. Chemical Physics. 595. 112708–112708. 3 indexed citations

3.

Liu, Meng, Peng Fu, Christos Masouros, et al.. (2025). Multiple Access Enabled Integrated Sensing and Communication With Imperfect SIC: Non-Orthogonal Versus Rate Splitting. IEEE Transactions on Wireless Communications. 25. 8385–8400.

4.

Wang, Fang, et al.. (2024). Mechanism and Barrier Modulation of Pt/TaOₓ/HfO₂/TiN Self- Rectifying Devices. IEEE Transactions on Electron Devices. 71(10). 5980–5985. 1 indexed citations

5.

Wang, Jingxia, Bin Wang, Yifen Wang, et al.. (2024). General synthesis of magnetic binary transition metal telluride nanocrystals. Journal of Materials Chemistry C. 12(21). 7725–7731. 1 indexed citations

6.

Wang, Fang, Xin Shan, Yupeng Zhang, et al.. (2023). Titanium oxide memristors driven by oxygen diffusion dynamics and 1S1M biomimetic system. Vacuum. 210. 111844–111844. 4 indexed citations

7.

Zhang, Yupeng, Fang Wang, Xin Shan, et al.. (2023). Modeling and emulation of artificial nociceptor based on TiO2 threshold switching memristor. Materials Science and Engineering B. 290. 116360–116360. 16 indexed citations

8.

Wang, Fang, et al.. (2023). Survey on NLOS Identification and Error Mitigation for UWB Indoor Positioning. Electronics. 12(7). 1678–1678. 33 indexed citations

9.

Zhang, Kailiang, Yemei Han, Kai Hu, et al.. (2022). Mechanism Analysis and Highly Scaled Aluminum Nitride‐Based Self‐Rectifying Memristors. Advanced Electronic Materials. 8(11). 6 indexed citations

10.

Shan, Xin, Zeyu Wu, Yangyang Xie, et al.. (2022). Centimetre-scale single crystal α-MoO₃: oxygen assisted self-standing growth and low-energy consumption synaptic devices. Nanoscale. 15(3). 1200–1209. 5 indexed citations

11.

Zhang, Lifang, Fang Wang, Yemei Han, et al.. (2022). High Conductivity Update Linearity MoS₂ Memtransistors Array Based on Lithium‐Ion Modulation. Advanced Materials Interfaces. 9(32). 3 indexed citations

12.

Zhang, Kailiang, et al.. (2021). Self-Rectifying Al ₂ O ₃ /TaO _x Memristor With Gradual Operation at Low Current by Interfacial Layer. IEEE Transactions on Electron Devices. 68(12). 6100–6105. 34 indexed citations

13.

Zhou, Baozeng, et al.. (2020). Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS ₂ memristor. Nanotechnology. 31(26). 265202–265202. 44 indexed citations

14.

Zhang, Jingwei, Fang Wang, Kai Hu, et al.. (2020). Transparent HfO _x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement. Nanotechnology. 32(14). 145202–145202. 22 indexed citations

15.

Wang, Fang, Kai Hu, Wenxi Li, et al.. (2020). Ultralow power switching of Ta ₂ O ₅ /AlO _X bilayer synergistic resistive random access memory. Journal of Physics D Applied Physics. 53(33). 335104–335104. 8 indexed citations

16.

Li, Yi, Jiajun Wang, Baozeng Zhou, et al.. (2018). Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field. Physical Chemistry Chemical Physics. 20(37). 24109–24116. 105 indexed citations

17.

Wang, Fang, Yi Li, Yue Li, et al.. (2018). Field effect properties of single-layer MoS2(1−x)Se2x nanosheets produced by a one-step CVD process. Journal of Materials Science. 53(20). 14447–14455. 13 indexed citations

18.

Wu, Xiayan, Fang Wang, & Chunling Wang. (2015). Design and magnetic properties of L10–FePt/Fe and L10–FePt exchange coupled graded nanodots. Journal of Magnetism and Magnetic Materials. 384. 40–44. 4 indexed citations

19.

Wang, Fang, Shixiong Min, Yuqi Han, & Lei Feng. (2010). Visible-light-induced photocatalytic degradation of methylene blue with polyaniline-sensitized composite photocatalysts. Superlattices and Microstructures. 48(2). 170–180. 146 indexed citations

20.

Wang, Fang. (2006). Mechanism and capacity for removal of weakly-ionized species by EDI. Membrane science and technology/Membrane science and technology series. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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