F. T. Chen

601 total citations
11 papers, 500 citations indexed

About

F. T. Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Artificial Intelligence. According to data from OpenAlex, F. T. Chen has authored 11 papers receiving a total of 500 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 2 papers in Materials Chemistry and 1 paper in Artificial Intelligence. Recurrent topics in F. T. Chen's work include Advanced Memory and Neural Computing (11 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (7 papers). F. T. Chen is often cited by papers focused on Advanced Memory and Neural Computing (11 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (7 papers). F. T. Chen collaborates with scholars based in Taiwan and United States. F. T. Chen's co-authors include H. Y. Lee, Wen‐Shan Chen, Y. S. Chen, M.‐J. Tsai, Chenhsin Lien, P. Y. Gu, P. S. Chen, S. S. Sheu, Wei‐Cheng Lin and Po-Hsien Chiang and has published in prestigious journals such as Applied Physics Letters.

In The Last Decade

F. T. Chen

11 papers receiving 486 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. T. Chen Taiwan 6 489 113 86 82 32 11 500
P. Y. Gu Taiwan 6 452 0.9× 104 0.9× 65 0.8× 66 0.8× 32 1.0× 14 463
S. S. Sheu Taiwan 5 448 0.9× 116 1.0× 62 0.7× 63 0.8× 31 1.0× 13 459
Po-Hsien Chiang Taiwan 2 367 0.8× 80 0.7× 58 0.7× 60 0.7× 30 0.9× 4 377
H. Y. Lee Taiwan 8 554 1.1× 148 1.3× 90 1.0× 81 1.0× 32 1.0× 16 566
P. S. Chen Taiwan 5 428 0.9× 101 0.9× 64 0.7× 65 0.8× 31 1.0× 9 442
Noriyuki Iguchi Japan 11 350 0.7× 61 0.5× 49 0.6× 92 1.1× 28 0.9× 31 369
Chen-Hsi Lin Taiwan 11 553 1.1× 201 1.8× 155 1.8× 109 1.3× 14 0.4× 19 585
K. Kawai Japan 9 382 0.8× 62 0.5× 65 0.8× 94 1.1× 43 1.3× 13 404
Tai-Yuan Wu Taiwan 9 408 0.8× 95 0.8× 78 0.9× 95 1.2× 14 0.4× 12 411
Gilbert Sassine France 11 279 0.6× 56 0.5× 82 1.0× 60 0.7× 16 0.5× 18 309

Countries citing papers authored by F. T. Chen

Since Specialization
Citations

This map shows the geographic impact of F. T. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. T. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. T. Chen more than expected).

Fields of papers citing papers by F. T. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. T. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. T. Chen. The network helps show where F. T. Chen may publish in the future.

Co-authorship network of co-authors of F. T. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of F. T. Chen. A scholar is included among the top collaborators of F. T. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. T. Chen. F. T. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

11 of 11 papers shown
1.
Lien, Chenhsin, Y. S. Chen, H. Y. Lee, et al.. (2014). Overview and high density application of HfOx based RRAM. 60. 1–4. 3 indexed citations
2.
Chung, Steve S., H. Y. Lee, Y. S. Chen, et al.. (2014). New observations on the regular and irregular noise behavior in a resistance random access memory. 94–98. 4 indexed citations
3.
Chen, F. T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2013). Resistance instabilities in a filament-based resistive memory. 5E.1.1–5E.1.7. 10 indexed citations
5.
Rahaman, S. Z., S. Maikap, Wen‐Shan Chen, et al.. (2012). Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film. Applied Physics Letters. 101(7). 73106–73106. 51 indexed citations
6.
Rahaman, S. Z., S. Maikap, Wen‐Shan Chen, et al.. (2012). Excellent resistive switching memory: Influence of GeO<inf>x</inf> in WO<inf>x</inf> mixture. 50. 1–2. 1 indexed citations
7.
Chen, Wen‐Shan, Y. S. Chen, Yu‐I Hsu, et al.. (2011). IC process compatible anodic electrode structures for unipolar HfOx-based RRAM. 18. 1–2. 4 indexed citations
8.
Chen, Y. S., H. Y. Lee, P. S. Chen, et al.. (2011). Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory. 31.3.1–31.3.4. 36 indexed citations
9.
Lee, H. Y., Y. S. Chen, P. S. Chen, et al.. (2010). Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance. 19.7.1–19.7.4. 206 indexed citations
10.
Lien, Chenhsin, et al.. (2010). The highly scalable and reliable hafnium oxide ReRAM and its future challenges. 1084–1087. 12 indexed citations
11.
Chen, Y. S., H. Y. Lee, P. S. Chen, et al.. (2009). Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. 1–4. 170 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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