Erwin Schmitt

562 total citations
21 papers, 471 citations indexed

About

Erwin Schmitt is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, Erwin Schmitt has authored 21 papers receiving a total of 471 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 4 papers in Condensed Matter Physics. Recurrent topics in Erwin Schmitt's work include Silicon Carbide Semiconductor Technologies (16 papers), Silicon and Solar Cell Technologies (7 papers) and Thin-Film Transistor Technologies (7 papers). Erwin Schmitt is often cited by papers focused on Silicon Carbide Semiconductor Technologies (16 papers), Silicon and Solar Cell Technologies (7 papers) and Thin-Film Transistor Technologies (7 papers). Erwin Schmitt collaborates with scholars based in Germany, China and United States. Erwin Schmitt's co-authors include Dieter Hofmann, A. Winnacker, Matthias Bickermann, Thomas L. Straubinger, R. Eckstein, St.G. Müller, E. Gmelin, K. Bärner, L. Haupt and G. H. Rao and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Journal of Crystal Growth.

In The Last Decade

Erwin Schmitt

21 papers receiving 452 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Erwin Schmitt Germany 11 303 151 145 135 94 21 471
Calvin H. Carter China 16 621 2.0× 114 0.8× 79 0.5× 96 0.7× 73 0.8× 23 671
Masatoshi Kanaya Japan 15 620 2.0× 139 0.9× 43 0.3× 102 0.8× 125 1.3× 27 689
Edward Sanchez United States 18 671 2.2× 139 0.9× 56 0.4× 107 0.8× 87 0.9× 72 763
H. S. Chen Germany 8 109 0.4× 46 0.3× 146 1.0× 186 1.4× 69 0.7× 14 431
Tatsuo Fujimoto Japan 15 526 1.7× 180 1.2× 49 0.3× 85 0.6× 127 1.4× 57 643
Kei Ogasawara Japan 13 121 0.4× 110 0.7× 180 1.2× 296 2.2× 14 0.1× 30 448
D. Henshall United States 10 478 1.6× 61 0.4× 44 0.3× 77 0.6× 115 1.2× 11 522
Michael D. Hill United States 7 117 0.4× 102 0.7× 86 0.6× 142 1.1× 24 0.3× 14 286
D. Schläfer Germany 10 93 0.3× 123 0.8× 134 0.9× 186 1.4× 32 0.3× 19 361
S. Nishino Japan 11 403 1.3× 121 0.8× 21 0.1× 135 1.0× 54 0.6× 39 493

Countries citing papers authored by Erwin Schmitt

Since Specialization
Citations

This map shows the geographic impact of Erwin Schmitt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Erwin Schmitt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Erwin Schmitt more than expected).

Fields of papers citing papers by Erwin Schmitt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Erwin Schmitt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Erwin Schmitt. The network helps show where Erwin Schmitt may publish in the future.

Co-authorship network of co-authors of Erwin Schmitt

This figure shows the co-authorship network connecting the top 25 collaborators of Erwin Schmitt. A scholar is included among the top collaborators of Erwin Schmitt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Erwin Schmitt. Erwin Schmitt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Straubinger, Thomas L., et al.. (2010). High Quality 100mm 4H-SiC Substrates with Low Resistivity. Materials science forum. 645-648. 3–8. 4 indexed citations
2.
Straubinger, Thomas L., et al.. (2010). Increase of SiC Substrate Resistance Induced by Annealing. Materials science forum. 645-648. 223–226. 12 indexed citations
3.
Schmitt, Erwin, et al.. (2008). Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT. Materials science forum. 600-603. 11–14. 3 indexed citations
4.
Straubinger, Thomas L., et al.. (2007). Quality Aspects for the Production of SiC Bulk Crystals. Materials science forum. 556-557. 3–8. 4 indexed citations
5.
Schmitt, Erwin, et al.. (2007). Polytype stability and defects in differently doped bulk SiC. Journal of Crystal Growth. 310(5). 966–970. 28 indexed citations
6.
Kremer, R. K., M. Cardona, Erwin Schmitt, et al.. (2005). Heat capacity ofα−GaN: Isotope effects. Physical Review B. 72(7). 68 indexed citations
7.
Straubinger, Thomas L., et al.. (2003). PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals. Materials science forum. 433-436. 55–58. 7 indexed citations
8.
Schmitt, Erwin, et al.. (2001). Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions. Materials science forum. 353-356. 15–20. 3 indexed citations
9.
Kasper, N., K. Bärner, I. O. Troyanchuk, et al.. (2000). Time-resolved thermoelectrical effect in Sm0.56Sr0.44MnO3 perovskite. Physica B Condensed Matter. 292(1-2). 54–58. 3 indexed citations
10.
Awana, V. P. S., Erwin Schmitt, E. Gmelin, et al.. (2000). Effect of Zn substitution on para- to ferromagnetic transition temperature in La0.67Ca0.33Mn1−xZnxO3 colossal magnetoresistance materials. Journal of Applied Physics. 87(9). 5034–5036. 37 indexed citations
11.
Rao, G. H., Jirong Sun, L. Haupt, et al.. (1999). Magnetic, electric and thermal properties of La0.7Ca0.3Mn1−xFexO3 compounds. Physica B Condensed Matter. 269(3-4). 379–385. 66 indexed citations
12.
Hofmann, Dieter, Matthias Bickermann, R. Eckstein, et al.. (1999). Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation. Journal of Crystal Growth. 198-199. 1005–1010. 51 indexed citations
13.
Schmitt, Erwin, et al.. (1999). Growth and Characterization of 2″ 6H-Silicon Carbide. MRS Proceedings. 572. 3 indexed citations
14.
Hofmann, Dieter, et al.. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B. 61-62. 48–53. 54 indexed citations
15.
Müller, S., Wolfgang Hartung, Dieter Hofmann, et al.. (1998). Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals. Materials science forum. 264-268. 33–36. 6 indexed citations
16.
17.
Hofmann, Dieter, R. Eckstein, Yuri Makarov, et al.. (1997). SiC-bulk growth by physical-vapor transport and its global modelling. Journal of Crystal Growth. 174(1-4). 669–674. 53 indexed citations
18.
Müller, S., R. Eckstein, Dieter Hofmann, et al.. (1997). Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates. Materials Science and Engineering B. 44(1-3). 392–394. 9 indexed citations
19.
Hofmann, Dieter, R. Eckstein, L. Kadinski, et al.. (1997). Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality. MRS Proceedings. 483. 9 indexed citations
20.
Eckstein, R., Dieter Hofmann, Yu.N. Makarov, et al.. (1996). Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals. MRS Proceedings. 423. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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