E.M. Sankara Narayanan

3.4k total citations
168 papers, 1.8k citations indexed

About

E.M. Sankara Narayanan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E.M. Sankara Narayanan has authored 168 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 159 papers in Electrical and Electronic Engineering, 22 papers in Condensed Matter Physics and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E.M. Sankara Narayanan's work include Silicon Carbide Semiconductor Technologies (135 papers), Advancements in Semiconductor Devices and Circuit Design (73 papers) and Semiconductor materials and devices (72 papers). E.M. Sankara Narayanan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (135 papers), Advancements in Semiconductor Devices and Circuit Design (73 papers) and Semiconductor materials and devices (72 papers). E.M. Sankara Narayanan collaborates with scholars based in United Kingdom, Japan and United States. E.M. Sankara Narayanan's co-authors include M.M. De Souza, M. Sweet, Richard Cross, H. Kawai, Konstantin Vershinin, Akira Nakajima, S. Hardikar, David W. Green, Vineet Unni and G.A.J. Amaratunga and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

E.M. Sankara Narayanan

155 papers receiving 1.7k citations

Peers

E.M. Sankara Narayanan
Y. Park South Korea
Zhiwen Chen China
Zhuopeng Tan China
Guangyu Jiang China
Liusheng Xiao China
L.H. Omari Morocco
Yuan Gan China
Jiang Cao China
Richard A. Waldo United States
H. Mavoori United States
Y. Park South Korea
E.M. Sankara Narayanan
Citations per year, relative to E.M. Sankara Narayanan E.M. Sankara Narayanan (= 1×) peers Y. Park

Countries citing papers authored by E.M. Sankara Narayanan

Since Specialization
Citations

This map shows the geographic impact of E.M. Sankara Narayanan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.M. Sankara Narayanan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.M. Sankara Narayanan more than expected).

Fields of papers citing papers by E.M. Sankara Narayanan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.M. Sankara Narayanan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.M. Sankara Narayanan. The network helps show where E.M. Sankara Narayanan may publish in the future.

Co-authorship network of co-authors of E.M. Sankara Narayanan

This figure shows the co-authorship network connecting the top 25 collaborators of E.M. Sankara Narayanan. A scholar is included among the top collaborators of E.M. Sankara Narayanan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.M. Sankara Narayanan. E.M. Sankara Narayanan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Narayanan, E.M. Sankara, et al.. (2025). Evaluation of a 1200 V Polarization Super Junction GaN Field-Effect Transistor in Cascode Configuration. Electronics. 14(3). 624–624.
2.
Narayanan, E.M. Sankara, et al.. (2024). Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. Micromachines. 15(11). 1337–1337.
3.
4.
Narayanan, E.M. Sankara, et al.. (2023). Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics. 62(6). 64502–64502. 2 indexed citations
5.
Luo, Peng, et al.. (2022). Investigation on Shift in Threshold Voltages of 1.2 kV GaN Polarization Superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices. 70(1). 178–184. 4 indexed citations
6.
Luo, Peng, et al.. (2021). Analytical Modeling of Sheet Carrier Density and on-Resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices. 68(11). 5714–5719. 3 indexed citations
7.
Tan, Qiuyang, et al.. (2021). An ultra‐fast protection scheme for normally‐on wide bandgap devices. IET Power Electronics. 14(14). 2305–2313. 1 indexed citations
8.
Narayanan, E.M. Sankara, Peng Luo, Wataru Saito, & Shin–ichi Nishizawa. (2021). Performance Comparison of Scaled IGBTs and CIGBTs. 1 indexed citations
9.
Luo, Peng, E.M. Sankara Narayanan, Shin–ichi Nishizawa, & Wataru Saito. (2020). High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation. 686–689. 3 indexed citations
10.
Narayanan, E.M. Sankara, et al.. (2012). Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC. IEEE Transactions on Electron Devices. 60(1). 366–373. 11 indexed citations
11.
Nakajima, Akira, et al.. (2011). Performance Evaluation of 10-kV SiC Trench Clustered IGBT. IEEE Electron Device Letters. 32(9). 1272–1274. 9 indexed citations
12.
Hardikar, S., David W. Green, & E.M. Sankara Narayanan. (2006). Transient substrate currents in junction-isolated lateral IGBT. IEEE Transactions on Electron Devices. 53(6). 1487–1490. 4 indexed citations
13.
Hardikar, S., et al.. (2006). Influence of layout design on the performance of LIGBT. IEE Proceedings - Circuits Devices and Systems. 153(1). 67–67. 3 indexed citations
14.
Narayanan, E.M. Sankara. (2005). Surface pretretament by phosphate conversion coatings-A review. REVIEWS ON ADVANCED MATERIALS SCIENCE. 151 indexed citations
15.
McMahon, Richard, Florin Udrea, Kuang Sheng, et al.. (2004). Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings - Circuits Devices and Systems. 151(3). 203–203. 4 indexed citations
16.
Sheng, Kuang, Florin Udrea, G.A.J. Amaratunga, et al.. (2002). Dual gate lateral inversion layer emitter transistor. Cambridge University Engineering Department Publications Database. 37–40. 5 indexed citations
17.
Sweet, M., et al.. (2002). Striped anode engineering: a concept for fast switching power devices. Solid-State Electronics. 46(6). 903–909. 14 indexed citations
18.
Xu, Yue, Richard Cross, E.M. Sankara Narayanan, et al.. (2002). High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. Applied Physics Letters. 80(12). 2192–2194. 4 indexed citations
19.
Narayanan, E.M. Sankara, G.A.J. Amaratunga, W. I. Milne, & Alex Q. Huang. (2002). CMOS compatible 250 V lateral insulated base transistors. 33. 181–186.
20.
Narayanan, E.M. Sankara, et al.. (1999). A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT). IEEE Electron Device Letters. 20(11). 580–582. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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