Denggui Wang

1.3k total citations
39 papers, 1.0k citations indexed

About

Denggui Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Denggui Wang has authored 39 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 13 papers in Condensed Matter Physics. Recurrent topics in Denggui Wang's work include GaN-based semiconductor devices and materials (13 papers), 2D Materials and Applications (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Denggui Wang is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), 2D Materials and Applications (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). Denggui Wang collaborates with scholars based in China, United States and South Korea. Denggui Wang's co-authors include Xingwang Zhang, Junhua Meng, Jingbi You, Heng Liu, Zhigang Yin, Menglei Gao, Likun Cheng, Ye Wang, Qi Jiang and Yanan Chen and has published in prestigious journals such as Advanced Materials, ACS Nano and Chemistry of Materials.

In The Last Decade

Denggui Wang

36 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Denggui Wang China 17 698 581 239 80 76 39 1.0k
Daehyun Kim South Korea 19 665 1.0× 721 1.2× 124 0.5× 103 1.3× 126 1.7× 87 1.1k
Yi Zhuo China 14 335 0.5× 446 0.8× 343 1.4× 95 1.2× 35 0.5× 39 724
Yan Xiong China 19 363 0.5× 606 1.0× 269 1.1× 85 1.1× 186 2.4× 87 1.2k
Mohammad Nazari United States 13 236 0.3× 359 0.6× 181 0.8× 101 1.3× 266 3.5× 27 574
Yuanyuan Pan China 20 1.1k 1.6× 866 1.5× 131 0.5× 19 0.2× 40 0.5× 42 1.6k
Junfeng Hou China 14 257 0.4× 152 0.3× 148 0.6× 21 0.3× 132 1.7× 49 670
Reza Fathi Iran 16 162 0.2× 464 0.8× 179 0.7× 25 0.3× 38 0.5× 42 718
Jianqun Yang China 14 246 0.4× 366 0.6× 175 0.7× 47 0.6× 34 0.4× 64 564
Chirranjeevi Balaji Gopal United States 11 478 0.7× 408 0.7× 109 0.5× 16 0.2× 14 0.2× 16 866
Xiaobo Li China 16 188 0.3× 477 0.8× 181 0.8× 287 3.6× 69 0.9× 70 656

Countries citing papers authored by Denggui Wang

Since Specialization
Citations

This map shows the geographic impact of Denggui Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Denggui Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Denggui Wang more than expected).

Fields of papers citing papers by Denggui Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Denggui Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Denggui Wang. The network helps show where Denggui Wang may publish in the future.

Co-authorship network of co-authors of Denggui Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Denggui Wang. A scholar is included among the top collaborators of Denggui Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Denggui Wang. Denggui Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Haoran, Weimin Yuan, Jing Zhu, et al.. (2025). A Monolithic GaN Power IC With Enhanced d V SW /d t Noise Immunity, Negative V SW Tolerance and Turn-On d V SW /d t Control. IEEE Journal of Emerging and Selected Topics in Power Electronics. 14(1). 350–363.
2.
Li, Sheng, Lixi Wang, Mingfei Li, et al.. (2024). Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology. 1–4. 1 indexed citations
3.
Zhao, Mengyao, Lanlan Yang, Chuanqi Pan, et al.. (2024). Substrate bias effects in p-channel GaN-on-Si transistors. Science China Information Sciences. 68(1).
4.
5.
Li, Sheng, Ran Ye, Denggui Wang, et al.. (2024). Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology. IEEE Electron Device Letters. 45(10). 1922–1925. 1 indexed citations
6.
Zhu, Jing, Weifeng Sun, Qinsong Qian, et al.. (2023). A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dVS/dt Noise Immunity Enhancement Structure. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 32(3). 542–551. 10 indexed citations
7.
Wang, Rui, Denggui Wang, Bin Xie, et al.. (2023). Recent progress of advanced carbon-based cathode in sodium-selenium batteries. Journal of Alloys and Compounds. 952. 169980–169980. 11 indexed citations
8.
9.
Wang, Denggui, et al.. (2023). Occlusion-Aware Motion Planning for Autonomous Driving. IEEE Access. 11. 42809–42823. 8 indexed citations
10.
11.
Wang, Denggui, et al.. (2022). Potential risk assessment for safe driving of autonomous vehicles under occluded vision. Scientific Reports. 12(1). 4981–4981. 36 indexed citations
12.
Wang, Wen, et al.. (2022). Research on quantum cognition in autonomous driving. Scientific Reports. 12(1). 300–300. 16 indexed citations
13.
Fu, Weiping, et al.. (2022). Quantum decision making in automatic driving. Scientific Reports. 12(1). 11042–11042. 11 indexed citations
14.
Wu, Xiaoyu, Xing Chen, Huayu Wu, et al.. (2021). Encapsulation of Se in dual-wall hollow carbon spheres: Physical confinement and chemisorption for superior Na–Se and K–Se batteries. Carbon. 187. 354–364. 33 indexed citations
15.
Cheng, Likun, Junhua Meng, Xiaojun Pan, et al.. (2019). Two-dimensional hexagonal boron–carbon–nitrogen atomic layers. Nanoscale. 11(21). 10454–10462. 46 indexed citations
16.
Wang, Ye, Xingwang Zhang, Denggui Wang, et al.. (2019). Compositional Engineering of Mixed-Cation Lead Mixed-Halide Perovskites for High-Performance Photodetectors. ACS Applied Materials & Interfaces. 11(31). 28005–28012. 32 indexed citations
17.
Meng, Junhua, Denggui Wang, Likun Cheng, Menglei Gao, & Xingwang Zhang. (2018). Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures. Nanotechnology. 30(7). 74003–74003. 38 indexed citations
18.
Wang, Ye, Xingwang Zhang, Qi Jiang, et al.. (2018). Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO2 Electron Transport Layer. ACS Applied Materials & Interfaces. 10(7). 6505–6512. 43 indexed citations
19.
Meng, Junhua, Bangming Ming, Xingwang Zhang, et al.. (2018). Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films. Crystal Growth & Design. 19(1). 453–459. 4 indexed citations
20.
Wang, Denggui. (2009). The Control System for Pneumatic Manipulator. Techniques of Automation and Applications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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