Dawei Bi

570 total citations
76 papers, 417 citations indexed

About

Dawei Bi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, Dawei Bi has authored 76 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Hardware and Architecture. Recurrent topics in Dawei Bi's work include Semiconductor materials and devices (63 papers), Radiation Effects in Electronics (51 papers) and Advancements in Semiconductor Devices and Circuit Design (48 papers). Dawei Bi is often cited by papers focused on Semiconductor materials and devices (63 papers), Radiation Effects in Electronics (51 papers) and Advancements in Semiconductor Devices and Circuit Design (48 papers). Dawei Bi collaborates with scholars based in China, United States and Australia. Dawei Bi's co-authors include Zhiyuan Hu, Bingxu Ning, Shichang Zou, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Chao Peng, Ming Chen, Yunfei En and Yanwei Zhang and has published in prestigious journals such as Optics Express, IEEE Electron Device Letters and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

In The Last Decade

Dawei Bi

67 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dawei Bi China 10 398 22 12 12 10 76 417
Wu Lu China 9 170 0.4× 26 1.2× 6 0.5× 6 0.5× 6 0.6× 34 232
A. Bryant United States 11 329 0.8× 13 0.6× 54 4.5× 12 1.0× 9 0.9× 21 332
M. Alavi United States 6 240 0.6× 73 3.3× 16 1.3× 8 0.7× 14 1.4× 8 246
Michel Mardiguian France 9 162 0.4× 5 0.2× 7 0.6× 3 0.3× 7 0.7× 19 188
Tan Kiat Sean United States 3 272 0.7× 52 2.4× 32 2.7× 10 0.8× 10 1.0× 5 299
Satish Maheshwaram India 11 290 0.7× 6 0.3× 62 5.2× 11 0.9× 7 0.7× 36 319
Gyu-Seob Jeong South Korea 12 312 0.8× 14 0.6× 73 6.1× 8 0.7× 34 3.4× 35 323
C. Contiero Italy 12 460 1.2× 13 0.6× 34 2.8× 4 0.3× 7 0.7× 27 466
Y. Minami Japan 10 188 0.5× 8 0.4× 16 1.3× 8 0.7× 15 1.5× 22 205
David Levacq Belgium 9 368 0.9× 11 0.5× 87 7.3× 6 0.5× 5 0.5× 25 372

Countries citing papers authored by Dawei Bi

Since Specialization
Citations

This map shows the geographic impact of Dawei Bi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dawei Bi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dawei Bi more than expected).

Fields of papers citing papers by Dawei Bi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dawei Bi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dawei Bi. The network helps show where Dawei Bi may publish in the future.

Co-authorship network of co-authors of Dawei Bi

This figure shows the co-authorship network connecting the top 25 collaborators of Dawei Bi. A scholar is included among the top collaborators of Dawei Bi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dawei Bi. Dawei Bi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Zhengxuan, et al.. (2025). A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability. Microelectronics Journal. 159. 106626–106626.
2.
Hu, Zhiyuan, et al.. (2025). A Wide‐Range Voltage and High‐Speed Progressive Level Shifter With Charge Pump for Embedded Flash Memory. International Journal of Circuit Theory and Applications. 53(11). 6675–6684.
3.
Bi, Dawei, et al.. (2024). An ultra low‐power double‐node‐upsets hardened latch design. International Journal of Circuit Theory and Applications. 52(10). 5374–5389. 2 indexed citations
4.
Liu, Zhongyang, et al.. (2023). High-performance and highly-stable soft error resistant 12T SRAM cell for space applications. Microelectronics Reliability. 141. 114885–114885. 3 indexed citations
5.
6.
Liu, Zhongyang, et al.. (2022). An energy‐efficient level shifter based on a differential cascade voltage switch structure. International Journal of Circuit Theory and Applications. 51(2). 955–962. 3 indexed citations
7.
Bi, Dawei, et al.. (2020). A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models. IEEE Transactions on Nuclear Science. 67(11). 2337–2344. 3 indexed citations
8.
Zhu, Huilong, Mengying Zhang, Dawei Bi, et al.. (2019). An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs. IEEE Transactions on Nuclear Science. 66(3). 625–634. 10 indexed citations
9.
Peng, Chao, et al.. (2014). Total ionizing dose effect in 0.2μm PDSOI NMOSFETs with shallow trench isolation. Microelectronics Reliability. 54(4). 730–737. 9 indexed citations
10.
11.
Ning, Bingxu, et al.. (2013). Effects of total ionizing dose on narrow-channel SOI NMOSFETs. Acta Physica Sinica. 62(7). 76104–76104. 5 indexed citations
12.
Hu, Zhiyuan, Zhangli Liu, Zhengxuan Zhang, et al.. (2012). The influence of channel length on total ionizing dose effect in deep submicron technologies. Acta Physica Sinica. 61(5). 50702–50702. 5 indexed citations
13.
Wei, Xing, Zhifeng Yang, Jing Chen, et al.. (2011). Silicon-on-Insulator-on-Cavity-Structured Micropressure Sensor. Sensors and Materials. 159–159. 1 indexed citations
14.
Liu, Zhangli, Zhiyuan Hu, Zhengxuan Zhang, et al.. (2011). Analysis of bias effects on the total ionizing dose response in a 180 nm technology. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 644(1). 48–54. 11 indexed citations
15.
Liu, Zhangli, Zhiyuan Hu, Zhengxuan Zhang, et al.. (2011). Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica. 60(11). 116103–116103. 7 indexed citations
16.
Ning, Bingxu, Zhangli Liu, Zhiyuan Hu, et al.. (2011). Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectronics Reliability. 52(1). 130–136. 7 indexed citations
17.
Hu, Zhiyuan, Zhangli Liu, Zhengxuan Zhang, et al.. (2011). Radiation Hardening by Applying Substrate Bias. IEEE Transactions on Nuclear Science. 58(3). 1355–1360. 8 indexed citations
18.
Bi, Dawei, et al.. (2011). Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 272. 257–260. 8 indexed citations
19.
Zhang, Zhengxuan, et al.. (2009). 完全空乏化SIMOXウエハの全ドーズ硬さに対するSiイオン注入の影響【Powered by NICT】. Journal of Semiconductors. 30(9). 8. 1 indexed citations
20.
Zhang, En Xia, Dawei Bi, Ming Chen, et al.. (2009). Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers. Journal of Semiconductors. 30(9). 93002–93002. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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