D. Lollman

468 total citations
20 papers, 420 citations indexed

About

D. Lollman is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, D. Lollman has authored 20 papers receiving a total of 420 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 6 papers in Materials Chemistry. Recurrent topics in D. Lollman's work include Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (6 papers) and Surface and Thin Film Phenomena (5 papers). D. Lollman is often cited by papers focused on Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (6 papers) and Surface and Thin Film Phenomena (5 papers). D. Lollman collaborates with scholars based in France, Czechia and Tunisia. D. Lollman's co-authors include Khalifa Aguir, C. Lemire, T.A. Nguyen Tan, J.‐Y. Veuillen, Laurence Magaud, E. Gillet, H. Carchano, D. A. Papaconstantopoulos, Pierre Muret and J.C. Dupuy and has published in prestigious journals such as Physical review. B, Condensed matter, Sensors and Actuators B Chemical and Applied Surface Science.

In The Last Decade

D. Lollman

19 papers receiving 410 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Lollman France 11 300 169 163 144 102 20 420
Julian P. Noad Canada 16 512 1.7× 272 1.6× 119 0.7× 63 0.4× 138 1.4× 66 627
J. F. Bresse France 11 433 1.4× 150 0.9× 246 1.5× 121 0.8× 51 0.5× 46 510
D. M. Hoffman United States 11 141 0.5× 69 0.4× 330 2.0× 62 0.4× 34 0.3× 21 442
Paul E. West United States 9 127 0.4× 190 1.1× 151 0.9× 38 0.3× 158 1.5× 12 368
Y. Yabuuchi Japan 10 311 1.0× 120 0.7× 152 0.9× 90 0.6× 111 1.1× 24 415
W. Erfurth Germany 11 177 0.6× 96 0.6× 130 0.8× 28 0.2× 158 1.5× 23 350
Linlin Shi China 14 387 1.3× 162 1.0× 260 1.6× 67 0.5× 78 0.8× 41 545
Christophe Defranoux France 11 511 1.7× 104 0.6× 145 0.9× 216 1.5× 142 1.4× 38 581
J.F. Chang Taiwan 7 749 2.5× 102 0.6× 586 3.6× 73 0.5× 191 1.9× 8 846
M. Abaab Tunisia 15 588 2.0× 58 0.3× 627 3.8× 45 0.3× 90 0.9× 30 717

Countries citing papers authored by D. Lollman

Since Specialization
Citations

This map shows the geographic impact of D. Lollman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Lollman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Lollman more than expected).

Fields of papers citing papers by D. Lollman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Lollman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Lollman. The network helps show where D. Lollman may publish in the future.

Co-authorship network of co-authors of D. Lollman

This figure shows the co-authorship network connecting the top 25 collaborators of D. Lollman. A scholar is included among the top collaborators of D. Lollman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Lollman. D. Lollman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lollman, D., et al.. (2013). Response enhancement of WO<inf>3</inf> gas sensors by metallic nanograins. HAL (Le Centre pour la Communication Scientifique Directe). 126. 1–4. 2 indexed citations
2.
Gillet, E., K. Mašek, D. Lollman, & M. Gillet. (2007). Evolution of the oxidation states at the WO3 thin film surface during annealing in gases. Vacuum. 82(2). 261–265. 1 indexed citations
3.
Aguir, Khalifa, C. Lemire, & D. Lollman. (2002). Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor. Sensors and Actuators B Chemical. 84(1). 1–5. 159 indexed citations
4.
Lemire, C., et al.. (2002). Reactive R.F. magnetron sputtering deposition of WO3 thin films. Sensors and Actuators B Chemical. 84(1). 43–48. 61 indexed citations
5.
Lollman, D., et al.. (1997). III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films. Materials Science and Engineering B. 43(1-3). 283–287. 4 indexed citations
6.
Aguir, Khalifa, et al.. (1997). Raman and Electrical Characterizations of a-GaAs1-xNx Thin Films Grown on c-Si(p) Substrates by N2 Reactive Sputtering. Japanese Journal of Applied Physics. 36(1R). 11–11. 16 indexed citations
7.
Bendahan, Marc, Jean-Luc Seguin, D. Lollman, & H. Carchano. (1997). New type of Schottky barriers using NiTi shape memory alloy films. Thin Solid Films. 294(1-2). 278–280. 10 indexed citations
8.
Lollman, D., et al.. (1997). Amorphous GaAs1 − xNx thin films on crystalline Si substrates: growth and characterizations. Diamond and Related Materials. 6(10). 1568–1571. 5 indexed citations
9.
Lalande, F., et al.. (1997). Electrical and photoelectrical characterization of GaAsxSy polycrystalline thin films. Thin Solid Films. 296(1-2). 114–117. 1 indexed citations
10.
Aguir, Khalifa, D. Lollman, & H. Carchano. (1997). The evolution of a-GaAs1−xNx/c-GaAs interface states as a function of Ar-NH3 plasma. Materials Science and Engineering B. 50(1-3). 157–160. 1 indexed citations
11.
Aguir, Khalifa, et al.. (1995). Propriétés électriques d'hétérostructures a-GaAs/c-GaAs(n) et de structures de type MIS a-GaAsN/c-GaAs(n). Journal de Physique III. 5(10). 1573–1585. 2 indexed citations
12.
Veuillen, J.‐Y., D. Lollman, T.A. Nguyen Tan, & Laurence Magaud. (1993). A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111). Applied Surface Science. 65-66. 712–717. 17 indexed citations
13.
Veuillen, J.‐Y., T.A. Nguyen Tan, & D. Lollman. (1993). Electronic structure of erbium suicide ultra-thin films. Surface Science. 293(1-2). 86–92. 17 indexed citations
14.
Lollman, D., T.A. Nguyen Tan, J.‐Y. Veuillen, et al.. (1993). The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111). Applied Surface Science. 65-66. 704–711. 32 indexed citations
15.
Muret, Pierre, et al.. (1993). Electrical and photoelectrical properties of ErSi1.7/Si junctions. Applied Surface Science. 65-66. 725–728. 1 indexed citations
16.
Magaud, Laurence, J.‐Y. Veuillen, D. Lollman, et al.. (1992). Electronic structure ofErSi2andYSi2. Physical review. B, Condensed matter. 46(3). 1299–1304. 31 indexed citations
17.
Veuillen, J.‐Y., Laurence Magaud, D. Lollman, & T.A. Nguyen Tan. (1992). Surface electronic structure of erbium silicide epitaxially grown on Si(111). Surface Science. 269-270. 964–969. 22 indexed citations
18.
Tan, T.A. Nguyen, et al.. (1992). Oxidation of thin ErSi1.7 overlayers on Si(111). Applied Surface Science. 56-58. 501–506. 16 indexed citations
19.
Lollman, D., T.A. Nguyen Tan, & J.‐Y. Veuillen. (1992). A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature. Surface Science. 269-270. 959–963. 8 indexed citations
20.
Veuillen, J.‐Y., et al.. (1991). Electronic properties of epitaxial erbium silicide. Surface Science. 251-252. 432–436. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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