Sridhar Chandrasekaran

930 total citations
27 papers, 733 citations indexed

About

Sridhar Chandrasekaran is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Cellular and Molecular Neuroscience. According to data from OpenAlex, Sridhar Chandrasekaran has authored 27 papers receiving a total of 733 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 14 papers in Polymers and Plastics and 10 papers in Cellular and Molecular Neuroscience. Recurrent topics in Sridhar Chandrasekaran's work include Advanced Memory and Neural Computing (22 papers), Transition Metal Oxide Nanomaterials (14 papers) and Neuroscience and Neural Engineering (9 papers). Sridhar Chandrasekaran is often cited by papers focused on Advanced Memory and Neural Computing (22 papers), Transition Metal Oxide Nanomaterials (14 papers) and Neuroscience and Neural Engineering (9 papers). Sridhar Chandrasekaran collaborates with scholars based in Taiwan, India and United Kingdom. Sridhar Chandrasekaran's co-authors include Tseung‐Yuen Tseng, Firman Mangasa Simanjuntak, Debashis Panda, Chun-Chieh Lin, Rakesh Aluguri, Themis Prodromakis, Amit Kumar, Nagesh Kumar, Seiji Samukawa and Takeo Ohno and has published in prestigious journals such as Applied Physics Letters, Chemosphere and IEEE Transactions on Electron Devices.

In The Last Decade

Sridhar Chandrasekaran

27 papers receiving 717 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sridhar Chandrasekaran Taiwan 19 685 348 219 116 47 27 733
Weijie Qiu China 13 385 0.6× 155 0.4× 119 0.5× 87 0.8× 45 1.0× 32 500
Jianhui Zhao China 9 862 1.3× 366 1.1× 198 0.9× 261 2.3× 51 1.1× 14 910
Shuangsuo Mao China 22 1.1k 1.6× 504 1.4× 462 2.1× 236 2.0× 64 1.4× 52 1.2k
Shouhui Zhu China 21 1.1k 1.6× 521 1.5× 418 1.9× 278 2.4× 67 1.4× 47 1.2k
Heyi Huang China 10 740 1.1× 308 0.9× 215 1.0× 197 1.7× 81 1.7× 18 866
Revannath Dnyandeo Nikam South Korea 20 911 1.3× 216 0.6× 215 1.0× 375 3.2× 63 1.3× 27 1.1k
Pu Guo China 15 569 0.8× 242 0.7× 188 0.9× 114 1.0× 39 0.8× 27 669
Atul C. Khot South Korea 17 716 1.0× 191 0.5× 230 1.1× 340 2.9× 34 0.7× 31 897
Sha Nie China 13 725 1.1× 323 0.9× 175 0.8× 211 1.8× 81 1.7× 19 847

Countries citing papers authored by Sridhar Chandrasekaran

Since Specialization
Citations

This map shows the geographic impact of Sridhar Chandrasekaran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sridhar Chandrasekaran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sridhar Chandrasekaran more than expected).

Fields of papers citing papers by Sridhar Chandrasekaran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sridhar Chandrasekaran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sridhar Chandrasekaran. The network helps show where Sridhar Chandrasekaran may publish in the future.

Co-authorship network of co-authors of Sridhar Chandrasekaran

This figure shows the co-authorship network connecting the top 25 collaborators of Sridhar Chandrasekaran. A scholar is included among the top collaborators of Sridhar Chandrasekaran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sridhar Chandrasekaran. Sridhar Chandrasekaran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vasudevan, R., et al.. (2025). A critical review on printed electronics and its application. Nanotechnology. 36(16). 162002–162002. 1 indexed citations
2.
Chandrasekaran, Sridhar, et al.. (2024). γ-Ray-Induced Effects in Al:HfO₂-Based Memristor Devices for Memory and Sensor Applications. IEEE Electron Device Letters. 45(11). 2082–2085. 1 indexed citations
3.
Chandrasekaran, Sridhar, et al.. (2023). ZTO/MgO-Based Optoelectronic Synaptic Memristor for Neuromorphic Computing. IEEE Transactions on Electron Devices. 70(3). 1048–1054. 25 indexed citations
4.
Chandrasekaran, Sridhar, Arunkumar Jayakumar, & Rajkumar Velu. (2022). A Comprehensive Review on Printed Electronics: A Technology Drift towards a Sustainable Future. Nanomaterials. 12(23). 4251–4251. 20 indexed citations
5.
Chandrasekaran, Sridhar, et al.. (2022). Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing. Applied Physics Letters. 121(23). 10 indexed citations
6.
Simanjuntak, Firman Mangasa, et al.. (2021). Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications. Applied Physics Letters. 118(11). 51 indexed citations
7.
Simanjuntak, Firman Mangasa, et al.. (2021). Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications. IEEE Electron Device Letters. 43(1). 9–12. 29 indexed citations
8.
Simanjuntak, Firman Mangasa, et al.. (2021). Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure. Applied Physics Letters. 118(17). 15 indexed citations
9.
Panda, Debashis, et al.. (2020). Barrier Layer Induced Switching Stability in Ga:ZnO Nanorods Based Electrochemical Metallization Memory. IEEE Transactions on Nanotechnology. 19. 764–768. 15 indexed citations
10.
Panda, Debashis, et al.. (2020). Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning. IEEE Journal of the Electron Devices Society. 8. 110–115. 45 indexed citations
11.
Simanjuntak, Firman Mangasa, et al.. (2020). Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices. Applied Physics Letters. 117(7). 19 indexed citations
12.
Simanjuntak, Firman Mangasa, Sridhar Chandrasekaran, Chun-Chieh Lin, & Tseung‐Yuen Tseng. (2019). ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices. APL Materials. 7(5). 44 indexed citations
13.
Chandrasekaran, Sridhar, et al.. (2019). Improving linearity by introducing Al in HfO 2 as a memristor synapse device. Nanotechnology. 30(44). 445205–445205. 107 indexed citations
14.
Chandrasekaran, Sridhar, Firman Mangasa Simanjuntak, Debashis Panda, & Tseung‐Yuen Tseng. (2019). Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme. IEEE Transactions on Electron Devices. 66(11). 4722–4726. 53 indexed citations
15.
Simanjuntak, Firman Mangasa, Sridhar Chandrasekaran, Femiana Gapsari, & Tseung‐Yuen Tseng. (2019). Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device. IOP Conference Series Materials Science and Engineering. 494. 12027–12027. 3 indexed citations
16.
Chandrasekaran, Sridhar, Firman Mangasa Simanjuntak, Rakesh Aluguri, & Tseung‐Yuen Tseng. (2018). The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices. Thin Solid Films. 660. 777–781. 28 indexed citations
17.
Chandrasekaran, Sridhar, Firman Mangasa Simanjuntak, & Tseung‐Yuen Tseng. (2018). Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. Japanese Journal of Applied Physics. 57(4S). 04FE10–04FE10. 19 indexed citations
18.
Kumar, Nagesh, Amit Kumar, Sridhar Chandrasekaran, & Tseung‐Yuen Tseng. (2018). Synthesis of Mesoporous NiFe2O4 Nanoparticles for Enhanced Supercapacitive Performance. Journal of Clean Energy Technologies. 6(1). 51–55. 36 indexed citations
19.
Chandrasekaran, Sridhar, Firman Mangasa Simanjuntak, Tsung-Ling Tsai, Chun‐An Lin, & Tseung‐Yuen Tseng. (2017). Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory. Applied Physics Letters. 111(11). 23 indexed citations
20.
Simanjuntak, Firman Mangasa, et al.. (2017). Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. Nanotechnology. 28(38). 38LT02–38LT02. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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