Takeki Ninomiya

829 total citations
18 papers, 411 citations indexed

About

Takeki Ninomiya is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Automotive Engineering. According to data from OpenAlex, Takeki Ninomiya has authored 18 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Automotive Engineering. Recurrent topics in Takeki Ninomiya's work include Advanced Memory and Neural Computing (12 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (10 papers). Takeki Ninomiya is often cited by papers focused on Advanced Memory and Neural Computing (12 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (10 papers). Takeki Ninomiya collaborates with scholars based in Japan. Takeki Ninomiya's co-authors include Koji Katayama, Zhiqiang Wei, Ryutaro Yasuhara, Takeshi Takagi, S. Muraoka, Takumi Mikawa, T. Takagi, K. Kawai, K. Shimakawa and K. Aono and has published in prestigious journals such as Journal of Physics Condensed Matter, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Takeki Ninomiya

17 papers receiving 406 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Takeki Ninomiya Japan	9	400	100	81	71	13	18	411
Shuichiro Yasuda United States	6	305 0.8×	62 0.6×	96 1.2×	122 1.7×	9 0.7×	9	331
K. Tsunoda Japan	7	597 1.5×	120 1.2×	197 2.4×	146 2.1×	7 0.5×	17	613
Ryutaro Yasuhara Japan	10	393 1.0×	104 1.0×	47 0.6×	44 0.6×	19 1.5×	21	414
H. Y. Lee Taiwan	8	554 1.4×	81 0.8×	90 1.1×	148 2.1×	19 1.5×	16	566
Y. Kawashima Japan	7	266 0.7×	68 0.7×	58 0.7×	49 0.7×	4 0.3×	9	282
S. O. Park South Korea	6	383 1.0×	55 0.6×	108 1.3×	107 1.5×	8 0.6×	14	410
Noriyuki Iguchi Japan	11	350 0.9×	92 0.9×	49 0.6×	61 0.9×	26 2.0×	31	369
X. Li Singapore	10	399 1.0×	46 0.5×	28 0.3×	47 0.7×	8 0.6×	19	411
Shunichi Kaeriyama Japan	12	434 1.1×	63 0.6×	37 0.5×	42 0.6×	14 1.1×	18	441

Countries citing papers authored by Takeki Ninomiya

Since Specialization

Citations

This map shows the geographic impact of Takeki Ninomiya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takeki Ninomiya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takeki Ninomiya more than expected).

Fields of papers citing papers by Takeki Ninomiya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takeki Ninomiya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takeki Ninomiya. The network helps show where Takeki Ninomiya may publish in the future.

Co-authorship network of co-authors of Takeki Ninomiya

This figure shows the co-authorship network connecting the top 25 collaborators of Takeki Ninomiya. A scholar is included among the top collaborators of Takeki Ninomiya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takeki Ninomiya. Takeki Ninomiya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Ninomiya, Takeki, Takeshi Takagi, Masakazu Mori, M. Niwa, & Tadahiro Kuroda. (2025). AlN Gap-Fill Process by Aerosol Deposition Method for Application in 3D-IC Packaging. 106–110.

Takagi, T., Takeki Ninomiya, Masako Niwa, et al.. (2024). High Thermal Conductivity AlN Films for Advanced 3D Chiplets. 1–2. 3 indexed citations

Ninomiya, Takeki, Takeshi Takagi, Masakazu Mori, M. Niwa, & Tadahiro Kuroda. (2024). Introduction of thick AlN coating on Si for 3D-IC thermal management. Japanese Journal of Applied Physics. 1 indexed citations

Takeuchi, Kai, Takeki Ninomiya, Masaya Kawano, et al.. (2023). Hydrophilic Bonding of SiO₂/SiO₂ and Cu/Cu using Sequential Plasma Activation. ECS Transactions. 112(3). 95–101. 3 indexed citations

Takeuchi, Kai, Takeki Ninomiya, Masaya Kawano, et al.. (2023). Hydrophilic Bonding of SiO₂/SiO₂ and Cu/Cu using Sequential Plasma Activation. ECS Meeting Abstracts. MA2023-02(33). 1595–1595. 2 indexed citations

Wei, Zhiqiang, et al.. (2014). Switching and reliability mechanisms for ReRAM. 109. 349–352. 4 indexed citations

Wei, Zhiqiang, et al.. (2014). Quantitative method for estimating characteristics of conductive filament in ReRAM. 842–845. 5 indexed citations

Muraoka, S., Takeki Ninomiya, Zhiqiang Wei, et al.. (2013). Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM. Symposium on VLSI Technology. 2013. 51–52. 31 indexed citations

Kawahara, Akifumi, K. Kawai, Y. Ikeda, et al.. (2013). Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM. 220–221. 37 indexed citations

10.

Ninomiya, Takeki, et al.. (2013). Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM. IEEE Electron Device Letters. 34(6). 762–764. 39 indexed citations

11.

Yasuhara, Ryo, Takeki Ninomiya, S. Muraoka, et al.. (2013). Consideration of conductive filament for realization of low-current and highly-reliable TaO<inf>x</inf> ReRAM. 34–37. 11 indexed citations

12.

Ninomiya, Takeki, et al.. (2013). Conductive Filament Expansion in TaO_xBipolar Resistive Random Access Memory during Pulse Cycling. Japanese Journal of Applied Physics. 52(11R). 114201–114201. 15 indexed citations

13.

Ninomiya, Takeki, et al.. (2013). Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current. IEEE Transactions on Electron Devices. 60(4). 1384–1389. 106 indexed citations

14.

Ninomiya, Takeki, T. Takagi, Zhiqiang Wei, et al.. (2012). Conductive filament scaling of TaO<inf>x</inf> bipolar ReRAM for long retention with low current operation. 73–74. 25 indexed citations

15.

Wei, Zhiqiang, T. Takagi, Yuchi Kanzawa, et al.. (2012). Retention Model for High-Density ReRAM. 1–4. 24 indexed citations

16.

Wei, Zhiqiang, T. Takagi, Yuchi Kanzawa, et al.. (2011). Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model. 31.4.1–31.4.4. 99 indexed citations

17.

Wei, Zhiqiang, Yuchi Kanzawa, K. Arita, et al.. (2009). Switching Mechanism of TaOx ReRAM. 1 indexed citations

18.

Toyoura, Kazuaki, Fumiyasu Oba, Takeki Ninomiya, Akihide Kuwabara, & Isao Tanaka. (2007). First-principles study of defect equilibria in lithium zinc nitride. Journal of Physics Condensed Matter. 19(4). 46201–46201. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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