Ch. Walczyk

513 total citations
13 papers, 436 citations indexed

About

Ch. Walczyk is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ch. Walczyk has authored 13 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ch. Walczyk's work include Ferroelectric and Negative Capacitance Devices (10 papers), Semiconductor materials and devices (8 papers) and Advanced Memory and Neural Computing (8 papers). Ch. Walczyk is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (10 papers), Semiconductor materials and devices (8 papers) and Advanced Memory and Neural Computing (8 papers). Ch. Walczyk collaborates with scholars based in Germany, Belgium and France. Ch. Walczyk's co-authors include Mindaugas Lukosius, Christian Wenger, Thomas Schroeder, Damian Walczyk, T. Bertaud, M. Sowińska, Bernd Tillack, D. Wolansky, J. Da̧browski and Mirko Fraschke and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

Ch. Walczyk

13 papers receiving 429 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ch. Walczyk Germany 9 408 170 71 47 28 13 436
Heeyoung Jeon South Korea 12 326 0.8× 163 1.0× 54 0.8× 58 1.2× 41 1.5× 34 387
Stefan Petzold Germany 12 378 0.9× 111 0.7× 95 1.3× 71 1.5× 14 0.5× 27 408
Sora Han South Korea 13 442 1.1× 295 1.7× 41 0.6× 41 0.9× 31 1.1× 18 483
Ching‐Chiun Wang Taiwan 12 599 1.5× 253 1.5× 69 1.0× 121 2.6× 25 0.9× 33 632
Tobias Vogel Germany 11 292 0.7× 93 0.5× 74 1.0× 53 1.1× 21 0.8× 21 345
S. U. Sharath Germany 13 636 1.6× 163 1.0× 178 2.5× 114 2.4× 40 1.4× 20 676
W. X. Xianyu South Korea 10 451 1.1× 202 1.2× 68 1.0× 156 3.3× 39 1.4× 14 504
C. Mannequin France 14 490 1.2× 145 0.9× 148 2.1× 102 2.2× 37 1.3× 31 529
Annemarie Koehl Germany 9 278 0.7× 260 1.5× 63 0.9× 57 1.2× 101 3.6× 10 392
M.N. Kozicki United States 10 399 1.0× 269 1.6× 79 1.1× 96 2.0× 41 1.5× 15 460

Countries citing papers authored by Ch. Walczyk

Since Specialization
Citations

This map shows the geographic impact of Ch. Walczyk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ch. Walczyk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ch. Walczyk more than expected).

Fields of papers citing papers by Ch. Walczyk

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ch. Walczyk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ch. Walczyk. The network helps show where Ch. Walczyk may publish in the future.

Co-authorship network of co-authors of Ch. Walczyk

This figure shows the co-authorship network connecting the top 25 collaborators of Ch. Walczyk. A scholar is included among the top collaborators of Ch. Walczyk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ch. Walczyk. Ch. Walczyk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Sowińska, M., T. Bertaud, Damian Walczyk, et al.. (2012). Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures. Applied Physics Letters. 100(23). 85 indexed citations
2.
Bertaud, T., M. Sowińska, Damian Walczyk, et al.. (2012). Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure. IOP Conference Series Materials Science and Engineering. 41. 12018–12018. 2 indexed citations
3.
Walczyk, Damian, T. Bertaud, M. Sowińska, et al.. (2012). Resistive switching behavior in TiN/HfO<inf>2</inf>/Ti/TiN devices. 22. 143–146. 20 indexed citations
4.
Walczyk, Damian, Ch. Walczyk, Thomas Schroeder, et al.. (2011). Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells. Microelectronic Engineering. 88(7). 1133–1135. 52 indexed citations
5.
Walczyk, Ch., Christian Wenger, Damian Walczyk, et al.. (2011). On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 01AD02–01AD02. 36 indexed citations
6.
Bertaud, T., Damian Walczyk, Ch. Walczyk, et al.. (2011). Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material. Thin Solid Films. 520(14). 4551–4555. 35 indexed citations
7.
Badylevich, M., V. V. Afanas’ev, A. Stesmans, et al.. (2010). Injection and trapping of electrons in Y2O3layers on Si. IOP Conference Series Materials Science and Engineering. 8. 12028–12028. 2 indexed citations
8.
Lukosius, Mindaugas, Ch. Walczyk, Mirko Fraschke, et al.. (2010). High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics. Thin Solid Films. 518(15). 4380–4384. 26 indexed citations
9.
Walczyk, Ch., Thomas Schroeder, Mindaugas Lukosius, et al.. (2009). Resistive switching in TiN/HfO<sub>2</sub>/Ti/TiN MIM devices for future nonvolatile memory applications. 1–4. 3 indexed citations
10.
Walczyk, Ch., Christian Wenger, Mindaugas Lukosius, et al.. (2009). Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications. Journal of Applied Physics. 105(11). 90 indexed citations
11.
Badylevich, M., V. V. Afanas’ev, A. Stesmans, et al.. (2009). Band alignment and electron traps in Y2O3 layers on (100)Si. Applied Physics Letters. 95(13). 41 indexed citations
12.
Seifarth, O., Ch. Walczyk, Grzegorz Łupina, et al.. (2009). Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities. Journal of Applied Physics. 106(10). 5 indexed citations
13.
Łupina, Grzegorz, Grzegorz Kozłowski, J. Da̧browski, et al.. (2008). Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications. Applied Physics Letters. 92(6). 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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