C. Tivarus

841 total citations
18 papers, 262 citations indexed

About

C. Tivarus is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Aerospace Engineering. According to data from OpenAlex, C. Tivarus has authored 18 papers receiving a total of 262 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Aerospace Engineering. Recurrent topics in C. Tivarus's work include Integrated Circuits and Semiconductor Failure Analysis (7 papers), CCD and CMOS Imaging Sensors (5 papers) and Semiconductor materials and interfaces (4 papers). C. Tivarus is often cited by papers focused on Integrated Circuits and Semiconductor Failure Analysis (7 papers), CCD and CMOS Imaging Sensors (5 papers) and Semiconductor materials and interfaces (4 papers). C. Tivarus collaborates with scholars based in United States, Romania and Italy. C. Tivarus's co-authors include J. P. Pelz, Mantu K. Hudait, Steven A. Ringel, Yu-Fu Lin, Ioana Pintilie, L. Pintilie, W. C. McColgin, M. N. Palmisiano, T. Boƫilă and E. Pentia and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Tivarus

18 papers receiving 239 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Tivarus United States 9 235 129 63 44 20 18 262
N. M. Stus’ Russia 11 321 1.4× 261 2.0× 54 0.9× 31 0.7× 16 0.8× 57 356
Michael Doderer Switzerland 6 217 0.9× 272 2.1× 86 1.4× 164 3.7× 16 0.8× 14 451
Joel Kuttruff Germany 9 92 0.4× 111 0.9× 26 0.4× 99 2.3× 10 0.5× 15 233
M. Fukuma Japan 12 373 1.6× 149 1.2× 72 1.1× 43 1.0× 3 0.1× 37 443
Ruijun Ding China 8 286 1.2× 117 0.9× 49 0.8× 54 1.2× 93 4.7× 51 342
Mark Kasperczyk Switzerland 10 52 0.2× 257 2.0× 138 2.2× 99 2.3× 11 0.6× 12 358
Yu. M. Zadiranov Russia 12 439 1.9× 428 3.3× 67 1.1× 97 2.2× 6 0.3× 87 572
Carlos H. Costa Brazil 14 122 0.5× 293 2.3× 90 1.4× 130 3.0× 37 1.9× 29 381
L. M. Murray United States 9 325 1.4× 266 2.1× 50 0.8× 39 0.9× 29 1.4× 13 347
І. Bolshakova Ukraine 11 203 0.9× 98 0.8× 57 0.9× 45 1.0× 24 1.2× 49 285

Countries citing papers authored by C. Tivarus

Since Specialization
Citations

This map shows the geographic impact of C. Tivarus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Tivarus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Tivarus more than expected).

Fields of papers citing papers by C. Tivarus

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Tivarus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Tivarus. The network helps show where C. Tivarus may publish in the future.

Co-authorship network of co-authors of C. Tivarus

This figure shows the co-authorship network connecting the top 25 collaborators of C. Tivarus. A scholar is included among the top collaborators of C. Tivarus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Tivarus. C. Tivarus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Doran, J., et al.. (2019). 43- and 50-Mp High-Performance Interline CCD Image Sensors. IEEE Transactions on Electron Devices. 66(3). 1329–1337. 3 indexed citations
2.
Doan, Hung Q., et al.. (2008). Low-Crosstalk and Low-Dark-Current CMOS Image-Sensor Technology Using a Hole-Based Detector. 25. 60–595. 23 indexed citations
3.
Tivarus, C. & W. C. McColgin. (2008). Dark Current Spectroscopy of Irradiated CCD Image Sensors. IEEE Transactions on Nuclear Science. 55(3). 1719–1724. 14 indexed citations
4.
McColgin, W. C., et al.. (2007). Bright-Pixel Defects in Irradiated CCD Image Sensors. MRS Proceedings. 994. 6 indexed citations
5.
Tivarus, C. & W. C. McColgin. (2007). Radiation-Induced Deep-Level Traps in CCD Image Sensors. MRS Proceedings. 994. 1 indexed citations
6.
Haick, Hossam, J. P. Pelz, T. Ligonzo, et al.. (2006). Controlling Au/n‐GaAs junctions by partial molecular monolayers. physica status solidi (a). 203(14). 3438–3451. 26 indexed citations
7.
Tivarus, C., J. P. Pelz, Mantu K. Hudait, & Steven A. Ringel. (2005). Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts. Physical Review Letters. 94(20). 206803–206803. 25 indexed citations
8.
Tivarus, C., J. P. Pelz, Mantu K. Hudait, & Steven A. Ringel. (2005). Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts. Applied Physics Letters. 87(18). 15 indexed citations
9.
Hudait, Mantu K., Yu-Fu Lin, M. N. Palmisiano, et al.. (2004). Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates. Journal of Applied Physics. 95(8). 3952–3960. 54 indexed citations
10.
Hudait, Mantu K., Yu-Fu Lin, David M. Wilt, et al.. (2003). High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy. Applied Physics Letters. 82(19). 3212–3214. 30 indexed citations
11.
Heller, Eric R., C. Tivarus, & J. P. Pelz. (2003). Avalanche ballistic electron emission microscopy with single hot-electron sensitivity. Applied Physics Letters. 83(14). 2841–2843. 1 indexed citations
12.
Tivarus, C., Yun Ding, & J. P. Pelz. (2002). Calculated potential profile near charged threading dislocations at metal/semiconductor interfaces. Journal of Applied Physics. 92(10). 6010–6013. 5 indexed citations
13.
Hudait, Mantu K., Yu-Fu Lin, C. Andre, et al.. (2002). Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE. MRS Proceedings. 722. 4 indexed citations
14.
Pintilie, Ioana, C. Tivarus, L. Pintilie, et al.. (2002). Thermally stimulated current method applied to highly irradiated silicon diodes. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 476(3). 652–657. 8 indexed citations
15.
Pentia, E., L. Pintilie, C. Tivarus, Ioana Pintilie, & T. Boƫilă. (2001). Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films. Materials Science and Engineering B. 80(1-3). 23–26. 33 indexed citations
16.
Pintilie, Ioana, C. Tivarus, T. Boƫilă, D. Petre, & L. Pintilie. (2000). Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 439(2-3). 221–227. 4 indexed citations
17.
Pintilie, Ioana, D. Petre, L. Pintilie, et al.. (2000). Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 439(2-3). 303–309. 5 indexed citations
18.
Pintilie, Ioana, L. Pintilie, D. Petre, C. Tivarus, & T. Boƫilă. (1998). Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels. Applied Physics Letters. 73(12). 1685–1687. 5 indexed citations

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