C. Reimann

1.1k total citations
54 papers, 833 citations indexed

About

C. Reimann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Reimann has authored 54 papers receiving a total of 833 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 35 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Reimann's work include Silicon and Solar Cell Technologies (40 papers), Solidification and crystal growth phenomena (21 papers) and Thin-Film Transistor Technologies (16 papers). C. Reimann is often cited by papers focused on Silicon and Solar Cell Technologies (40 papers), Solidification and crystal growth phenomena (21 papers) and Thin-Film Transistor Technologies (16 papers). C. Reimann collaborates with scholars based in Germany, United States and France. C. Reimann's co-authors include Jochen Friedrich, M. Trempa, G. Müller, Christian Kranert, Thomas Jung, L. Sylla, Thomas Richter, A. Krause, A. Cröll and Elke Meißner and has published in prestigious journals such as Journal of Applied Physics, Acta Materialia and ACS Applied Materials & Interfaces.

In The Last Decade

C. Reimann

53 papers receiving 812 citations

Peers

C. Reimann

EEE

AMPO

M. Trempa Germany

H.J. Möller Germany

Xiao Chen China

Jae-Geun Ha South Korea

Shotaro HARA Japan

Geun-Hie Rim South Korea

Hongming Zhao China

N. Beck Switzerland

Guohua Qiu China

M. Trempa Germany

C. Reimann

467 ×0.8

EEE

321 ×0.7

123 ×0.8

AMPO

118 ×0.8

94 ×0.8

Citations per year, relative to C. Reimann C. Reimann (= 1×) peers M. Trempa

Countries citing papers authored by C. Reimann

Since Specialization

Citations

This map shows the geographic impact of C. Reimann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Reimann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Reimann more than expected).

Fields of papers citing papers by C. Reimann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Reimann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Reimann. The network helps show where C. Reimann may publish in the future.

Co-authorship network of co-authors of C. Reimann

This figure shows the co-authorship network connecting the top 25 collaborators of C. Reimann. A scholar is included among the top collaborators of C. Reimann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Reimann. C. Reimann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Erlbacher, Tobias, et al.. (2023). Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 344. 53–57.

Trempa, M., et al.. (2022). Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals. Crystals. 13(1). 14–14. 3 indexed citations

Trempa, M., et al.. (2022). Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals. Journal of Crystal Growth. 584. 126582–126582. 8 indexed citations

Trempa, M., C. Reimann, Gustav Schroll, et al.. (2021). Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots. Journal of Crystal Growth. 568-569. 126178–126178. 8 indexed citations

Kranert, Christian, et al.. (2021). Facet growth and geometry of the growth ridge during dynamic Czochralski processes. Journal of Crystal Growth. 568-569. 126174–126174. 5 indexed citations

Trempa, M., et al.. (2020). Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application. Journal of Crystal Growth. 540. 125636–125636. 16 indexed citations

Mosel, F., Christian Kranert, Thomas Jung, et al.. (2020). Limitations of the Growth Rate of Silicon Mono Ingots Grown by the Czochralski Technique. EU PVSEC. 468–473. 1 indexed citations

Friedrich, Jochen, et al.. (2019). Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications. Journal of Crystal Growth. 524. 125168–125168. 23 indexed citations

Trempa, M., et al.. (2019). Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles. Journal of Crystal Growth. 522. 151–159. 5 indexed citations

10.

Trempa, M., et al.. (2019). Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots. Journal of Crystal Growth. 514. 114–123. 4 indexed citations

11.

He, Ran, Nicolás Pérez, Christine Damm, et al.. (2018). Thermoelectric properties of silicon and recycled silicon sawing waste. Journal of Materiomics. 5(1). 15–33. 27 indexed citations

12.

Derby, Jeffrey J., et al.. (2017). A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth. Journal of Crystal Growth. 463. 100–109. 7 indexed citations

13.

Trempa, M., et al.. (2017). Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots. Journal of Crystal Growth. 465. 18–26. 8 indexed citations

14.

Cröll, A., et al.. (2016). Particle engulfment dynamics under oscillating crystal growth conditions. Journal of Crystal Growth. 468. 24–27. 10 indexed citations

15.

Kundin, Julia, et al.. (2016). Phase-field simulations of particle capture during the directional solidification of silicon. Journal of Crystal Growth. 446. 12–26. 18 indexed citations

16.

Trempa, M., Manfred Beier, C. Reimann, et al.. (2016). Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots. Journal of Crystal Growth. 454. 6–14. 13 indexed citations

17.

Reimann, C., et al.. (2015). Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon. Acta Materialia. 93. 129–137. 7 indexed citations

18.

Müller, Georg, et al.. (2014). Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods. Journal of Crystal Growth. 395. 74–79. 5 indexed citations

19.

Beier, Manfred, M. Trempa, C. Reimann, et al.. (2014). Feedstock Recharging During Directional Solidification of Silicon Ingots for PV Applications. EU PVSEC. 717–721. 1 indexed citations

20.

Reimann, C., M. Trempa, Jochen Friedrich, & G. Müller. (2010). About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock. Journal of Crystal Growth. 312(9). 1510–1516. 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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