M. Trempa

784 total citations
33 papers, 600 citations indexed

About

M. Trempa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Trempa has authored 33 papers receiving a total of 600 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Trempa's work include Silicon and Solar Cell Technologies (27 papers), Silicon Nanostructures and Photoluminescence (12 papers) and Thin-Film Transistor Technologies (10 papers). M. Trempa is often cited by papers focused on Silicon and Solar Cell Technologies (27 papers), Silicon Nanostructures and Photoluminescence (12 papers) and Thin-Film Transistor Technologies (10 papers). M. Trempa collaborates with scholars based in Germany and United States. M. Trempa's co-authors include Jochen Friedrich, C. Reimann, G. Müller, L. Sylla, Thomas Jung, Thomas Richter, Christian Kranert, A. Krause, Hartmut S. Leipner and Georg Müller and has published in prestigious journals such as Acta Materialia, Materials and Journal of Crystal Growth.

In The Last Decade

M. Trempa

32 papers receiving 585 citations

Peers

M. Trempa
C. Reimann Germany
Markus Rinio Germany
N. Beck Switzerland
D.A. Clugston Australia
C. Reimann Germany
M. Trempa
Citations per year, relative to M. Trempa M. Trempa (= 1×) peers C. Reimann

Countries citing papers authored by M. Trempa

Since Specialization
Citations

This map shows the geographic impact of M. Trempa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Trempa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Trempa more than expected).

Fields of papers citing papers by M. Trempa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Trempa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Trempa. The network helps show where M. Trempa may publish in the future.

Co-authorship network of co-authors of M. Trempa

This figure shows the co-authorship network connecting the top 25 collaborators of M. Trempa. A scholar is included among the top collaborators of M. Trempa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Trempa. M. Trempa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mohammadi, Mahsa, et al.. (2023). Influence of Aluminum Co-Doping on Current-Induced Degradation and Regeneration Kinetics in Boron-Doped Cz PERC Solar Cells. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4.
3.
Trempa, M., et al.. (2022). Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals. Crystals. 13(1). 14–14. 3 indexed citations
4.
Trempa, M., et al.. (2022). Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals. Journal of Crystal Growth. 584. 126582–126582. 8 indexed citations
5.
Trempa, M., C. Reimann, Gustav Schroll, et al.. (2021). Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots. Journal of Crystal Growth. 568-569. 126178–126178. 8 indexed citations
6.
Koch, Holger M., et al.. (2021). Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals. Journal of Crystal Growth. 576. 126384–126384. 4 indexed citations
7.
Trempa, M., Christian Kranert, C. Reimann, & Jochen Friedrich. (2021). Impact of silicon feedstock contamination by gas phase diffusion on material quality of cast silicon ingots. Journal of Crystal Growth. 570. 126224–126224. 4 indexed citations
8.
Trempa, M., et al.. (2021). Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals. Journal of Crystal Growth. 570. 126231–126231. 12 indexed citations
9.
Trempa, M., et al.. (2020). Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application. Journal of Crystal Growth. 540. 125636–125636. 16 indexed citations
10.
Mosel, F., Christian Kranert, Thomas Jung, et al.. (2020). Limitations of the Growth Rate of Silicon Mono Ingots Grown by the Czochralski Technique. EU PVSEC. 468–473. 1 indexed citations
11.
Friedrich, Jochen, et al.. (2019). Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications. Journal of Crystal Growth. 524. 125168–125168. 23 indexed citations
12.
Trempa, M., et al.. (2019). Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles. Journal of Crystal Growth. 522. 151–159. 5 indexed citations
13.
Trempa, M., et al.. (2019). Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots. Journal of Crystal Growth. 514. 114–123. 4 indexed citations
14.
Trempa, M., et al.. (2019). Impact of different SiO2 diffusion barrier layers on lifetime distribution in multi-crystalline silicon ingots. Journal of Crystal Growth. 532. 125378–125378. 15 indexed citations
15.
Trempa, M., et al.. (2017). Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots. Journal of Crystal Growth. 465. 18–26. 8 indexed citations
16.
Trempa, M., et al.. (2017). Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon. Journal of Crystal Growth. 463. 1–9. 18 indexed citations
17.
Trempa, M., Manfred Beier, C. Reimann, et al.. (2016). Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots. Journal of Crystal Growth. 454. 6–14. 13 indexed citations
18.
Beier, Manfred, M. Trempa, C. Reimann, et al.. (2014). Feedstock Recharging During Directional Solidification of Silicon Ingots for PV Applications. EU PVSEC. 717–721. 1 indexed citations
19.
Trempa, M., C. Reimann, Jochen Friedrich, et al.. (2014). Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots. Journal of Crystal Growth. 405. 131–141. 55 indexed citations
20.
Reimann, C., M. Trempa, Jochen Friedrich, & G. Müller. (2010). About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock. Journal of Crystal Growth. 312(9). 1510–1516. 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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