B. Rössner

589 total citations
13 papers, 463 citations indexed

About

B. Rössner is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B. Rössner has authored 13 papers receiving a total of 463 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Atomic and Molecular Physics, and Optics, 11 papers in Electrical and Electronic Engineering and 2 papers in Materials Chemistry. Recurrent topics in B. Rössner's work include Semiconductor Quantum Structures and Devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Quantum and electron transport phenomena (6 papers). B. Rössner is often cited by papers focused on Semiconductor Quantum Structures and Devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Quantum and electron transport phenomena (6 papers). B. Rössner collaborates with scholars based in Switzerland, Italy and Germany. B. Rössner's co-authors include B. Batlogg, Kurt P. Pernstich, Giovanni Isella, H. von Känel, Daniel Chrastina, T. Hackbarth, U. König, H.-J. Herzog, Monica Bollani and J. P. Hague and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Surface Science.

In The Last Decade

B. Rössner

13 papers receiving 455 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Rössner Switzerland 8 335 226 188 89 70 13 463
Mikhail Masharin Russia 12 247 0.7× 139 0.6× 146 0.8× 53 0.6× 18 0.3× 21 319
Meng Lee Leek Singapore 5 424 1.3× 152 0.7× 366 1.9× 23 0.3× 39 0.6× 6 495
Juan A. Delgado‐Notario Spain 10 236 0.7× 155 0.7× 131 0.7× 127 1.4× 14 0.2× 38 374
A. S. Pozharov Russia 14 397 1.2× 419 1.9× 170 0.9× 68 0.8× 14 0.2× 33 563
Xianxiong He China 8 591 1.8× 144 0.6× 411 2.2× 42 0.5× 68 1.0× 8 613
S. Ihnatsenka Sweden 15 249 0.7× 369 1.6× 262 1.4× 30 0.3× 41 0.6× 34 486
Shigeo Asahi Japan 10 221 0.7× 209 0.9× 206 1.1× 86 1.0× 8 0.1× 34 318
Lianzhen Cao China 10 143 0.4× 114 0.5× 174 0.9× 44 0.5× 16 0.2× 44 329
Branislav Dzurňák Czechia 11 153 0.5× 138 0.6× 191 1.0× 56 0.6× 45 0.6× 20 325
Sjoerd Smit Netherlands 10 619 1.8× 321 1.4× 267 1.4× 46 0.5× 22 0.3× 13 700

Countries citing papers authored by B. Rössner

Since Specialization
Citations

This map shows the geographic impact of B. Rössner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Rössner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Rössner more than expected).

Fields of papers citing papers by B. Rössner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Rössner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Rössner. The network helps show where B. Rössner may publish in the future.

Co-authorship network of co-authors of B. Rössner

This figure shows the co-authorship network connecting the top 25 collaborators of B. Rössner. A scholar is included among the top collaborators of B. Rössner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Rössner. B. Rössner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Pernstich, Kurt P., B. Rössner, & B. Batlogg. (2008). Field-effect-modulated Seebeck coefficient in organic semiconductors. Nature Materials. 7(4). 321–325. 182 indexed citations
2.
Rössner, B., H. von Känel, Daniel Chrastina, Giovanni Isella, & B. Batlogg. (2006). Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells. Semiconductor Science and Technology. 22(1). S191–S194. 8 indexed citations
3.
Rössner, B., B. Batlogg, H. von Känel, Daniel Chrastina, & Giovanni Isella. (2006). Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures. Materials Science in Semiconductor Processing. 9(4-5). 777–780. 2 indexed citations
4.
Rössner, B., H. von Känel, Daniel Chrastina, Giovanni Isella, & B. Batlogg. (2005). 2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms. Thin Solid Films. 508(1-2). 351–354. 6 indexed citations
5.
Rössner, B., H. von Känel, Daniel Chrastina, Giovanni Isella, & B. Batlogg. (2005). Electron–electron interaction in p-SiGe/Ge quantum wells. Materials Science and Engineering B. 124-125. 184–187. 1 indexed citations
6.
Chrastina, Daniel, Giovanni Isella, Monica Bollani, et al.. (2005). Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition. Journal of Crystal Growth. 281(2-4). 281–289. 8 indexed citations
7.
Isella, Giovanni, Daniel Chrastina, B. Rössner, et al.. (2004). Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices. Solid-State Electronics. 48(8). 1317–1323. 109 indexed citations
8.
Känel, H. von, Daniel Chrastina, B. Rössner, et al.. (2004). High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition. Microelectronic Engineering. 76(1-4). 279–284. 20 indexed citations
9.
Rössner, B., Daniel Chrastina, Giovanni Isella, & H. von Känel. (2004). Scattering mechanisms in high-mobility strained Ge channels. Applied Physics Letters. 84(16). 3058–3060. 73 indexed citations
10.
Chrastina, Daniel, Giovanni Isella, B. Rössner, et al.. (2004). High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition. Thin Solid Films. 459(1-2). 37–40. 9 indexed citations
11.
Rössner, B., Giovanni Isella, & H. von Känel. (2003). Effective mass in remotely doped Ge quantum wells. Applied Physics Letters. 82(5). 754–756. 37 indexed citations
12.
Erbudak, M., et al.. (2001). An empirical study of the Mn partial density of states in icosahedral Al70Pd20Mn10. Journal of Electron Spectroscopy and Related Phenomena. 120(1-3). 47–53. 4 indexed citations
13.
Rössner, B., et al.. (2001). Local electronic density of states at the surface of the bulk quasicrystal Al70Pd20Mn10. Surface Science. 489(1-3). 169–173. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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