Б. Н. Звонков

1.2k total citations
169 papers, 908 citations indexed

About

Б. Н. Звонков is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Б. Н. Звонков has authored 169 papers receiving a total of 908 indexed citations (citations by other indexed papers that have themselves been cited), including 146 papers in Atomic and Molecular Physics, and Optics, 101 papers in Electrical and Electronic Engineering and 63 papers in Materials Chemistry. Recurrent topics in Б. Н. Звонков's work include Semiconductor Quantum Structures and Devices (122 papers), ZnO doping and properties (45 papers) and Advanced Semiconductor Detectors and Materials (39 papers). Б. Н. Звонков is often cited by papers focused on Semiconductor Quantum Structures and Devices (122 papers), ZnO doping and properties (45 papers) and Advanced Semiconductor Detectors and Materials (39 papers). Б. Н. Звонков collaborates with scholars based in Russia, Portugal and United States. Б. Н. Звонков's co-authors include Yu. A. Danilov, О. В. Вихрова, N. V. Baidus, М. В. Дорохин, П. Б. Демина, S. V. Zaı̆tsev, Д. О. Филатов, V. Ya. Aleshkin, V. D. Kulakovskiĭ and Yu. N. Drozdov and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Б. Н. Звонков

155 papers receiving 886 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Б. Н. Звонков Russia 15 758 518 417 129 66 169 908
S. Loualiche France 25 1.7k 2.2× 1.6k 3.1× 416 1.0× 118 0.9× 93 1.4× 121 1.9k
V. A. Shalygin Russia 15 455 0.6× 339 0.7× 233 0.6× 143 1.1× 67 1.0× 74 655
P. S. Kop’ev Russia 15 1.1k 1.5× 1.0k 1.9× 317 0.8× 157 1.2× 77 1.2× 63 1.3k
M. T. Emeny United Kingdom 16 678 0.9× 564 1.1× 215 0.5× 91 0.7× 53 0.8× 43 803
A. I. Toropov Russia 18 937 1.2× 583 1.1× 329 0.8× 214 1.7× 12 0.2× 158 1.1k
J. A. Gupta Canada 17 872 1.2× 758 1.5× 187 0.4× 187 1.4× 74 1.1× 63 1.0k
N. Ohtsuka Japan 17 862 1.1× 899 1.7× 404 1.0× 125 1.0× 35 0.5× 47 1.1k
G. Walter United States 21 1.0k 1.4× 1.2k 2.4× 172 0.4× 84 0.7× 46 0.7× 62 1.3k
P. O. Holtz Sweden 15 807 1.1× 645 1.2× 426 1.0× 225 1.7× 18 0.3× 73 1.1k
G. Brunthaler Austria 22 1.0k 1.4× 835 1.6× 365 0.9× 295 2.3× 12 0.2× 82 1.3k

Countries citing papers authored by Б. Н. Звонков

Since Specialization
Citations

This map shows the geographic impact of Б. Н. Звонков's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Б. Н. Звонков with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Б. Н. Звонков more than expected).

Fields of papers citing papers by Б. Н. Звонков

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Б. Н. Звонков. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Б. Н. Звонков. The network helps show where Б. Н. Звонков may publish in the future.

Co-authorship network of co-authors of Б. Н. Звонков

This figure shows the co-authorship network connecting the top 25 collaborators of Б. Н. Звонков. A scholar is included among the top collaborators of Б. Н. Звонков based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Б. Н. Звонков. Б. Н. Звонков is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ullah, Saeed, F. Iikawa, Yu. A. Danilov, et al.. (2019). Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids. Scientific Reports. 9(1). 7294–7294. 4 indexed citations
2.
Ушаков, Д. В., et al.. (2018). Power characteristics of lasers with quantum-well waveguides and blocking layers. Quantum Electronics. 48(4). 390–394. 1 indexed citations
3.
Дорохин, М. В., et al.. (2018). Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions. Semiconductors. 52(8). 1004–1011. 6 indexed citations
4.
Вихрова, О. В., et al.. (2015). Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer. Semiconductors. 49(1). 9–12. 2 indexed citations
5.
Бобров, А. И., О. В. Вихрова, Yu. A. Danilov, et al.. (2014). Structural perfection and the distribution of impurities in magnetic semiconductor nanoheterosystems based on GaAs. Bulletin of the Russian Academy of Sciences Physics. 78(1). 6–8. 2 indexed citations
6.
Ганьшина, Е. А., В. И. Ковалев, Yu. A. Danilov, et al.. (2012). Peculiarities in Optical and Magneto-Optical Spectra of GaMnSb Layers Grown by Laser Ablation. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 190. 562–565. 3 indexed citations
7.
Вихрова, О. В., et al.. (2012). Manganese diffusion in ingaas/gaas quantum well structures. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(3). 508–510. 2 indexed citations
8.
Дорохин, М. В., et al.. (2012). Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 6(3). 511–514. 2 indexed citations
9.
Дроздов, М. Н., et al.. (2009). Heteroepitaxial III–V films on fianite substrates and buffer layers. Bulletin of the Russian Academy of Sciences Physics. 73(4). 485–490. 1 indexed citations
10.
Аронзон, Б. А., V. V. Rylkov, А. А. Давыдов, et al.. (2009). Ferromagnetic transition in GaAs/Mn/GaAs/In x Ga1 − x As/GaAs structures with a two-dimensional hole gas. Journal of Experimental and Theoretical Physics. 109(2). 293–301. 15 indexed citations
11.
Gurin, Péter, V. A. Kulbachinskiı̆, Yu. A. Danilov, et al.. (2007). Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn. Journal of Experimental and Theoretical Physics. 105(1). 181–184. 2 indexed citations
12.
Kulbachinskiı̆, V. A., et al.. (2007). Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer. Physica E Low-dimensional Systems and Nanostructures. 39(1). 1–7. 2 indexed citations
13.
Аронзон, Б. А., A. B. Granovsky, А. А. Давыдов, et al.. (2007). Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs. Physics of the Solid State. 49(1). 171–177. 4 indexed citations
14.
Kulbachinskiı̆, V. A., et al.. (2006). Persistent IR photoconductivity in InAs/GaAs structures with QD layers. Semiconductors. 40(2). 210–216. 3 indexed citations
15.
Aleshkin, V. Ya., et al.. (2005). Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers. Journal of Modern Optics. 52(16). 2323–2330. 9 indexed citations
16.
Звонков, Б. Н., et al.. (2004). Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer. Semiconductors. 38(4). 431–436. 8 indexed citations
17.
Drozdov, Yu. N., et al.. (2003). Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy. Semiconductors. 37(2). 194–199. 17 indexed citations
18.
Shastin, V. N., С.Г. Павлов, A. V. Muravjov, et al.. (1997). Far-Infrared Hole Absorption in InxGa1—xAs/GaAs MQW Heterostructures with δ-Doped Barriers. physica status solidi (b). 204(1). 174–177. 2 indexed citations
19.
Mintairov, A. M., et al.. (1995). Optical phonons in spontaneously ordered InGaP solid solutions. Physics of the Solid State. 37(12). 1985–1992. 4 indexed citations
20.
Baidus, N. V., et al.. (1994). Use of quantum-well structures to study defect formation at semiconductor surfaces. Semiconductors. 28(1). 63–67. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by S. Loualiche Breakdown of academic impact, for papers by V. A. Shalygin Breakdown of academic impact, for papers by P. S. Kop’ev Breakdown of academic impact, for papers by M. T. Emeny Breakdown of academic impact, for papers by A. I. Toropov Breakdown of academic impact, for papers by J. A. Gupta Breakdown of academic impact, for papers by N. Ohtsuka Breakdown of academic impact, for papers by G. Walter Breakdown of academic impact, for papers by P. O. Holtz Breakdown of academic impact, for papers by G. Brunthaler
Rankless by CCL
2026