A.B. Bhattacharyya

668 total citations
86 papers, 460 citations indexed

About

A.B. Bhattacharyya is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A.B. Bhattacharyya has authored 86 papers receiving a total of 460 indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 26 papers in Biomedical Engineering. Recurrent topics in A.B. Bhattacharyya's work include Advancements in Semiconductor Devices and Circuit Design (33 papers), Semiconductor materials and devices (21 papers) and Analog and Mixed-Signal Circuit Design (15 papers). A.B. Bhattacharyya is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (33 papers), Semiconductor materials and devices (21 papers) and Analog and Mixed-Signal Circuit Design (15 papers). A.B. Bhattacharyya collaborates with scholars based in India, United States and Netherlands. A.B. Bhattacharyya's co-authors include Tapas Chakravarty, Sunil Bhooshan, J. K. Srivastava, Maneesha Gupta, I. K. Varma, Shreshth Tuli, Rajinder Singh, Rohit Sharma, L. Manchanda and Rakesh Sharma and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

A.B. Bhattacharyya

71 papers receiving 403 citations

Peers

A.B. Bhattacharyya

EEE

AMPO

Mario Caron Canada

Ryosuke Watanabe Japan

A. J. Baden Fuller United Kingdom

Roger D. Meredith United States

Munehisa Takeda Japan

Sang‐Hoon Jung South Korea

M. Miller United States

C.K. Chen United States

M. McAllister United States

David B. Miller United States

Mario Caron Canada

A.B. Bhattacharyya

243 ×0.6

EEE

54 ×0.7

56 ×0.8

33 ×0.5

AMPO

35 ×0.5

Citations per year, relative to A.B. Bhattacharyya A.B. Bhattacharyya (= 1×) peers Mario Caron

Countries citing papers authored by A.B. Bhattacharyya

Since Specialization

Citations

This map shows the geographic impact of A.B. Bhattacharyya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.B. Bhattacharyya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.B. Bhattacharyya more than expected).

Fields of papers citing papers by A.B. Bhattacharyya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.B. Bhattacharyya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.B. Bhattacharyya. The network helps show where A.B. Bhattacharyya may publish in the future.

Co-authorship network of co-authors of A.B. Bhattacharyya

This figure shows the co-authorship network connecting the top 25 collaborators of A.B. Bhattacharyya. A scholar is included among the top collaborators of A.B. Bhattacharyya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.B. Bhattacharyya. A.B. Bhattacharyya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bhattacharyya, A.B., et al.. (2023). Machine Learning and Deep Learning powered satellite communications: Enabling technologies, applications, open challenges, and future research directions. International Journal of Satellite Communications and Networking. 41(6). 539–588. 16 indexed citations

Bhattacharyya, A.B., et al.. (2016). Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression. Solid-State Electronics. 129. 188–195. 3 indexed citations

Bhattacharyya, A.B., et al.. (2010). Transconductance related analysis of EKV MOSFET model for a 0.35 µm CMOS technology node. International Conference Mixed Design of Integrated Circuits and Systems. 436–440. 1 indexed citations

Bhattacharyya, A.B., et al.. (2009). Extended-Sakurai-Newton MOSFET Model for Ultra-Deep-Submicrometer CMOS Digital Design. 247–252. 13 indexed citations

Sharma, Rakesh, Tapas Chakravarty, & A.B. Bhattacharyya. (2008). Signal Integrity Issues in High-Speed Interconnects Over a Ground Plane Aperture. Journal of Electromagnetic Waves and Applications. 22(16). 2231–2240. 2 indexed citations

Sharma, Rohit, Tapas Chakravarty, Sunil Bhooshan, & A.B. Bhattacharyya. (2007). Characteristic Impedance of a Microstrip-Like Interconnect Line in Presence of Ground Plane Aperture. 2007. 1–5. 12 indexed citations

Sharma, Rohit, Tapas Chakravarty, Sunil Bhooshan, & A.B. Bhattacharyya. (2007). ResearchArticle Characteristic Impedance of a Microstrip-Like Interconnect Line in Presence of Ground Plane Aperture. 1 indexed citations

Bhattacharyya, A.B., et al.. (2002). PREDICTMOS MOSFET Model and its Application to Submicron CMOS Inverter Delay Analysis. Asia and South Pacific Design Automation Conference. 207–212. 2 indexed citations

Bhattacharyya, A.B., et al.. (1995). SPICE simulation of surface acoustic wave interdigital transducers. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 42(4). 784–786. 9 indexed citations

10.

Bhattacharyya, A.B., Shreshth Tuli, & S. K. Kataria. (1994). An automated nondestructive characterization system for pyroelectric materials. IEEE Transactions on Instrumentation and Measurement. 43(1). 30–33. 4 indexed citations

11.

Bandyopadhyay, Abhijit & A.B. Bhattacharyya. (1992). Modeling Three Dimensional Effects in CMOS Latch-up. IEICE Transactions on Electronics. 943–952. 1 indexed citations

12.

Singh, Rajinder & A.B. Bhattacharyya. (1989). Matching properties of linear MOS capacitors. Solid-State Electronics. 32(4). 299–306. 12 indexed citations

13.

Bhattacharyya, A.B., et al.. (1989). Matching properties of linear MOS capacitors. IEEE Transactions on Circuits and Systems. 36(3). 465–467. 10 indexed citations

14.

Bhattacharyya, A.B., et al.. (1983). Passivation of gallium arsenide by reactively sputtered gallium nitride thin films. Microelectronics Journal. 14(1). 43–48. 1 indexed citations

15.

Bhattacharyya, A.B., et al.. (1979). Current gain variability in normal and I2L bipolar transistors. 3(4). 107–116.

16.

Srivastava, Ashok & A.B. Bhattacharyya. (1978). Determination of base recombination lifetime and surface recombination velocity at N−N+ interface of epitaxial transistors. Solid-State Electronics. 21(8). 1089–1090. 1 indexed citations

17.

Kumar, Umesh & A.B. Bhattacharyya. (1978). Modified charge-control model for MOS transistors. Solid-State Electronics. 21(3). 593–594.

18.

Bhattacharyya, A.B. & Ashok Srivastava. (1973). Transient response of a transistor-tunnel diode hybrid combination with resistive feedback. Proceedings of the IEEE. 61(6). 790–792.

19.

Bhattacharyya, A.B., et al.. (1973). Transition-capacitance calculations for double-diffused p-n junctions. Solid-State Electronics. 16(4). 467–476. 7 indexed citations

20.

Bhattacharyya, A.B., et al.. (1968). Drift-field photovoltaic cell performance with bulk and surface recombinations†. International Journal of Electronics. 25(1). 17–26. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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