А. В. Войцеховский

1.3k total citations
172 papers, 948 citations indexed

About

А. В. Войцеховский is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, А. В. Войцеховский has authored 172 papers receiving a total of 948 indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Electrical and Electronic Engineering, 112 papers in Atomic and Molecular Physics, and Optics and 50 papers in Materials Chemistry. Recurrent topics in А. В. Войцеховский's work include Advanced Semiconductor Detectors and Materials (124 papers), Semiconductor Quantum Structures and Devices (97 papers) and Chalcogenide Semiconductor Thin Films (53 papers). А. В. Войцеховский is often cited by papers focused on Advanced Semiconductor Detectors and Materials (124 papers), Semiconductor Quantum Structures and Devices (97 papers) and Chalcogenide Semiconductor Thin Films (53 papers). А. В. Войцеховский collaborates with scholars based in Russia, Ukraine and Poland. А. В. Войцеховский's co-authors include А. П. Коханенко, S. N. Nesmelov, S. М. Dzyadukh, Kirill A. Lozovoy, І. І. Іжнін, M. V. Yakushev, S. A. Dvoretsky, G. Yu. Sidorov, В. С. Варавин and Н. Н. Михайлов and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Chemistry Chemical Physics.

In The Last Decade

А. В. Войцеховский

158 papers receiving 900 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
А. В. Войцеховский Russia 15 728 560 349 122 92 172 948
M. V. Yakushev Russia 18 1.1k 1.5× 613 1.1× 501 1.4× 80 0.7× 84 0.9× 165 1.2k
Eric M. Jackson United States 20 569 0.8× 434 0.8× 205 0.6× 93 0.8× 107 1.2× 55 873
Grace D. Metcalfe United States 14 677 0.9× 485 0.9× 171 0.5× 165 1.4× 220 2.4× 37 975
Stephen W. Kennerly United States 16 913 1.3× 880 1.6× 322 0.9× 212 1.7× 79 0.9× 34 1.1k
Elizabeth H. Steenbergen United States 17 1.0k 1.4× 784 1.4× 189 0.5× 93 0.8× 117 1.3× 53 1.1k
Ajit V. Barve United States 16 718 1.0× 600 1.1× 240 0.7× 214 1.8× 61 0.7× 43 885
Yi Gu China 17 818 1.1× 685 1.2× 127 0.4× 156 1.3× 53 0.6× 115 944
В. А. Соловьев Russia 16 586 0.8× 573 1.0× 262 0.8× 86 0.7× 19 0.2× 120 833
Xiumei Shao China 13 481 0.7× 239 0.4× 178 0.5× 246 2.0× 66 0.7× 87 636
Nicolas Péré‐Laperne France 13 505 0.7× 262 0.5× 223 0.6× 275 2.3× 117 1.3× 64 694

Countries citing papers authored by А. В. Войцеховский

Since Specialization
Citations

This map shows the geographic impact of А. В. Войцеховский's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. В. Войцеховский with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. В. Войцеховский more than expected).

Fields of papers citing papers by А. В. Войцеховский

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. В. Войцеховский. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. В. Войцеховский. The network helps show where А. В. Войцеховский may publish in the future.

Co-authorship network of co-authors of А. В. Войцеховский

This figure shows the co-authorship network connecting the top 25 collaborators of А. В. Войцеховский. A scholar is included among the top collaborators of А. В. Войцеховский based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. В. Войцеховский. А. В. Войцеховский is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Войцеховский, А. В., S. М. Dzyadukh, Н. Н. Михайлов, et al.. (2025). Diffusion limitation of dark current in MBE HgCdTe based nBn MWIR structure with superlattice barrier layer. Journal of Physics D Applied Physics. 58(30). 305101–305101.
2.
Войцеховский, А. В., et al.. (2024). Unipolar barrier structures based on n-HgCdTe with superlattices as a barrier [Review]. Journal of Optical Technology. 91(2). 67–67. 1 indexed citations
3.
Войцеховский, А. В., S. М. Dzyadukh, С. А. Дворецкий, et al.. (2023). Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy. Journal of Communications Technology and Electronics. 68(9). 1036–1039. 1 indexed citations
4.
Войцеховский, А. В., S. М. Dzyadukh, С. А. Дворецкий, et al.. (2023). Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors. Journal of Communications Technology and Electronics. 68(3). 334–337. 1 indexed citations
5.
Lozovoy, Kirill A., et al.. (2020). Thickness-dependent surface energy and formation of epitaxial quantum dots. Thin Solid Films. 713. 138363–138363. 7 indexed citations
6.
Войцеховский, А. В., S. N. Nesmelov, S. М. Dzyadukh, et al.. (2020). Admittance of metal–insulator–semiconductor devices based on HgCdTe nBn structures. Semiconductor Science and Technology. 35(5). 55026–55026. 8 indexed citations
7.
Іжнін, І. І., K. D. Mynbaev, А. В. Войцеховский, et al.. (2020). Electrical and microscopic characterization of p + - type layers formed in HgCdTe by arsenic implantation. Semiconductor Science and Technology. 35(11). 115019–115019. 3 indexed citations
8.
Войцеховский, А. В., S. N. Nesmelov, S. М. Dzyadukh, et al.. (2019). Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al 2 O 3 passivation. Journal of Physics D Applied Physics. 53(5). 55107–55107. 16 indexed citations
9.
Іжнін, І. І., I.I. Syvorotka, А. В. Войцеховский, et al.. (2019). Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells. Applied Nanoscience. 10(8). 2489–2494.
10.
Коханенко, А. П., Kirill A. Lozovoy, & А. В. Войцеховский. (2018). Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces. Russian Physics Journal. 60(11). 1871–1879. 2 indexed citations
11.
Іжнін, І. І., et al.. (2016). Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells. Nanoscale Research Letters. 11(1). 53–53. 5 indexed citations
12.
Войцеховский, А. В., S. N. Nesmelov, & S. М. Dzyadukh. (2015). Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy. Journal of Electronic Materials. 45(2). 881–891. 7 indexed citations
13.
Войцеховский, А. В., et al.. (2013). The effect of boron implantation modes on the parameters of photodiodes produced in the Cd x Hg1-x Te heteroepitaxial structures. Russian Physics Journal. 56(5). 599–605. 1 indexed citations
14.
Войцеховский, А. В., et al.. (2002). Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses. Russian Physics Journal. 45(6). 629–637. 1 indexed citations
15.
Ремнев, Г. Е., et al.. (2000). Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. International Conference on High-Power Particle Beams. 775–779.
16.
Войцеховский, А. В., et al.. (1996). High power pulse electron beam modification and ion implantation of Hg 1−x Cd x Te crystals. International Conference on High-Power Particle Beams. 2. 817–820.
17.
Войцеховский, А. В., et al.. (1985). Radiation defect annealing of electron irradiated Hg1−xCdxTe crystals under various thermal treatments. physica status solidi (a). 90(1). 241–251. 4 indexed citations
18.
Войцеховский, А. В., et al.. (1984). Quantum oscillations of the photo-emf in an electric field in p-Hg(1-x)Cd(x)Te(x of approximately 0.20) with a surface inversion channel. 10. 742–746. 1 indexed citations
19.
Войцеховский, А. В., et al.. (1983). Characteristic features of the behavior of electron-irradiated Hg/sub 1-x/Cd/sub x/Te crystals subjected to various heat treatments. 1 indexed citations
20.
Войцеховский, А. В., et al.. (1981). Recombination effects in narrow-gap semiconductors p-Hg1−xCdxTe. physica status solidi (a). 67(2). 381–386. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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