A. V. Shaposhnikov

453 total citations
15 papers, 382 citations indexed

About

A. V. Shaposhnikov is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. V. Shaposhnikov has authored 15 papers receiving a total of 382 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Materials Chemistry, 14 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. V. Shaposhnikov's work include Semiconductor materials and devices (14 papers), Electronic and Structural Properties of Oxides (8 papers) and Silicon Nanostructures and Photoluminescence (5 papers). A. V. Shaposhnikov is often cited by papers focused on Semiconductor materials and devices (14 papers), Electronic and Structural Properties of Oxides (8 papers) and Silicon Nanostructures and Photoluminescence (5 papers). A. V. Shaposhnikov collaborates with scholars based in Russia, Hong Kong and France. A. V. Shaposhnikov's co-authors include V. A. Gritsenko, Timofey V. Perevalov, C. W. Kim, Hei Wong, Jeong Hee Han, Albert Chin, Chun Cheng, Yu. N. Novikov, Wai‐Ming Kwok and M. Röger and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Solid State Communications.

In The Last Decade

A. V. Shaposhnikov

15 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. V. Shaposhnikov Russia	10	300	212	58	53	31	15	382
C. W. Kim South Korea	11	334 1.1×	196 0.9×	72 1.2×	67 1.3×	32 1.0×	21	419
Sheng Teng Hsu United States	11	285 0.9×	208 1.0×	86 1.5×	59 1.1×	24 0.8×	42	377
Seiji Suzuki Japan	13	385 1.3×	247 1.2×	91 1.6×	160 3.0×	103 3.3×	37	549
Zengtao Lv China	11	154 0.5×	292 1.4×	70 1.2×	75 1.4×	32 1.0×	34	425
Christopher Nicklaw United States	10	595 2.0×	172 0.8×	65 1.1×	33 0.6×	28 0.9×	11	681
M. Major Germany	10	163 0.5×	231 1.1×	108 1.9×	154 2.9×	99 3.2×	47	439
Christopher Linderälv Sweden	9	223 0.7×	362 1.7×	95 1.6×	33 0.6×	12 0.4×	11	411
N. Finnegan United States	10	258 0.9×	172 0.8×	77 1.3×	21 0.4×	48 1.5×	19	367
Mitsuhiro Higashihata Japan	10	326 1.1×	349 1.6×	61 1.1×	112 2.1×	22 0.7×	31	467
Katsuhiro Yokota Japan	11	242 0.8×	196 0.9×	85 1.5×	29 0.5×	60 1.9×	72	377

Countries citing papers authored by A. V. Shaposhnikov

Since Specialization

Citations

This map shows the geographic impact of A. V. Shaposhnikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Shaposhnikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Shaposhnikov more than expected).

Fields of papers citing papers by A. V. Shaposhnikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Shaposhnikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Shaposhnikov. The network helps show where A. V. Shaposhnikov may publish in the future.

Co-authorship network of co-authors of A. V. Shaposhnikov

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Shaposhnikov. A scholar is included among the top collaborators of A. V. Shaposhnikov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Shaposhnikov. A. V. Shaposhnikov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Perevalov, Timofey V. & A. V. Shaposhnikov. (2013). Ab initio simulation of the electronic structure of Ta2O5 crystal modifications. Journal of Experimental and Theoretical Physics. 116(6). 995–1001. 12 indexed citations

Shaposhnikov, A. V., Timofey V. Perevalov, V. A. Gritsenko, Chun Cheng, & Albert Chin. (2012). Mechanism of GeO₂ resistive switching based on the multi-phonon assisted tunneling between traps. Applied Physics Letters. 100(24). 243506–243506. 61 indexed citations

Shaposhnikov, A. V., et al.. (2011). Study of the atomic and electronic structures of amorphous silicon nitride and defects in it. Journal of Experimental and Theoretical Physics Letters. 94(3). 202–205. 6 indexed citations

Gritsenko, V. A., et al.. (2009). Electronic structure of memory traps in silicon nitride. Microelectronic Engineering. 86(7-9). 1866–1869. 59 indexed citations

Perevalov, Timofey V., A. V. Shaposhnikov, & V. A. Gritsenko. (2009). Electronic structure of bulk and defect α- and γ-Al2O3. Microelectronic Engineering. 86(7-9). 1915–1917. 17 indexed citations

Shaposhnikov, A. V., et al.. (2007). Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride. Physics of the Solid State. 49(9). 1628–1632. 36 indexed citations

Perevalov, Timofey V., A. V. Shaposhnikov, V. A. Gritsenko, et al.. (2007). Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment. Journal of Experimental and Theoretical Physics Letters. 85(3). 165–168. 81 indexed citations

Shaposhnikov, A. V., O. P. Pchelyakov, V. A. Gritsenko, et al.. (2006). The atomic and electron structure of ZrO2. Journal of Experimental and Theoretical Physics. 102(5). 799–809. 24 indexed citations

Gritsenko, V. A., et al.. (2003). Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces. Thin Solid Films. 437(1-2). 135–139. 28 indexed citations

10.

Gritsenko, V. A., A. V. Shaposhnikov, Yu. N. Novikov, et al.. (2003). Onefold coordinated oxygen atom: an electron trap in the silicon oxide. Microelectronics Reliability. 43(4). 665–669. 14 indexed citations

11.

Gritsenko, V. A., A. V. Shaposhnikov, Yu. N. Novikov, et al.. (2003). Numerical study of one-fold coordinated oxygen atom in silicon gate oxide. 239. 39–42. 1 indexed citations

12.

Gritsenko, V. A., Yu. N. Novikov, A. V. Shaposhnikov, Hei Wong, & G. M. Zhidomirov. (2003). Capturing properties of a threefold coordinated silicon atom in silicon nitride: Positive correlation energy model. Physics of the Solid State. 45(11). 2031–2035. 6 indexed citations

13.

Gritsenko, V. A., A. V. Shaposhnikov, G. M. Zhidomirov, & M. Röger. (2002). Two fold coordinated silicon atom: a hole trap in SiO2. Solid State Communications. 121(6-7). 301–304. 9 indexed citations

14.

Shaposhnikov, A. V., V. A. Gritsenko, Г. M. Жидомиров, & M. Röger. (2002). Hole trapping on the twofold-coordinated silicon atom in SiO2. Physics of the Solid State. 44(6). 1028–1030. 4 indexed citations

15.

Gritsenko, V. A., et al.. (2001). Numerical simulation of intrinsic defects in SiO2 and Si3N4. Semiconductors. 35(9). 997–1005. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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