A. Ashok Kumar

812 total citations
45 papers, 722 citations indexed

About

A. Ashok Kumar is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. Ashok Kumar has authored 45 papers receiving a total of 722 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Atomic and Molecular Physics, and Optics, 43 papers in Electrical and Electronic Engineering and 12 papers in Materials Chemistry. Recurrent topics in A. Ashok Kumar's work include Semiconductor materials and interfaces (42 papers), Semiconductor materials and devices (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). A. Ashok Kumar is often cited by papers focused on Semiconductor materials and interfaces (42 papers), Semiconductor materials and devices (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). A. Ashok Kumar collaborates with scholars based in India, South Korea and Germany. A. Ashok Kumar's co-authors include V. Rajagopal Reddy, V. Janardhanam, M. Siva Pratap Reddy, P. Narasimha Reddy, Chel‐Jong Choi, B. Lakshmi, Subhash Chand, K. K. Sharma, U. Starke and K.M. Horn and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Physics D Applied Physics.

In The Last Decade

A. Ashok Kumar

43 papers receiving 701 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Ashok Kumar India 14 632 594 195 99 97 45 722
A. Tataroğlu Türkiye 12 602 1.0× 626 1.1× 219 1.1× 41 0.4× 46 0.5× 15 700
N. Yıldırım Türkiye 21 961 1.5× 961 1.6× 263 1.3× 135 1.4× 139 1.4× 39 1.1k
James G. Champlain United States 15 226 0.4× 409 0.7× 263 1.3× 96 1.0× 83 0.9× 44 524
I. Jyothi South Korea 16 377 0.6× 430 0.7× 222 1.1× 84 0.8× 91 0.9× 41 552
Andy Quindeau United States 12 535 0.8× 468 0.8× 217 1.1× 162 1.6× 53 0.5× 14 766
D. Biswas India 13 294 0.5× 410 0.7× 136 0.7× 98 1.0× 114 1.2× 44 524
A. Létoublon France 14 384 0.6× 554 0.9× 334 1.7× 101 1.0× 119 1.2× 25 665
Yanmeng Shi China 13 380 0.6× 207 0.3× 633 3.2× 81 0.8× 70 0.7× 25 735
Ung Hwan Pi South Korea 8 304 0.5× 181 0.3× 115 0.6× 135 1.4× 58 0.6× 22 432
Seongjae Lee South Korea 11 297 0.5× 413 0.7× 198 1.0× 43 0.4× 89 0.9× 60 562

Countries citing papers authored by A. Ashok Kumar

Since Specialization
Citations

This map shows the geographic impact of A. Ashok Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ashok Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ashok Kumar more than expected).

Fields of papers citing papers by A. Ashok Kumar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ashok Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ashok Kumar. The network helps show where A. Ashok Kumar may publish in the future.

Co-authorship network of co-authors of A. Ashok Kumar

This figure shows the co-authorship network connecting the top 25 collaborators of A. Ashok Kumar. A scholar is included among the top collaborators of A. Ashok Kumar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Ashok Kumar. A. Ashok Kumar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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2.
Kumar, A. Ashok, et al.. (2025). Electrical and photodiode possessions of the Au/V2O5/un-InP MIS-type photodiode under different illumination light intensities. Materials Science and Engineering B. 323. 118878–118878. 1 indexed citations
3.
Thomas, H., A. Ashok Kumar, S. Kaleemulla, & V. Rajagopal Reddy. (2025). Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction. Solid-State Electronics. 225. 109074–109074. 1 indexed citations
4.
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Kumar, A. Ashok, S. Kaleemulla, V. Rajagopal Reddy, et al.. (2024). Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure. Solid State Communications. 386. 115523–115523. 1 indexed citations
7.
Rani, Anjeeta, et al.. (2024). Structural, chemical, optical, electrical and photodiode properties of Au/ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer. Materials Science and Engineering B. 305. 117436–117436. 6 indexed citations
8.
Pavani, Mario, A. Ashok Kumar, V. Rajagopal Reddy, et al.. (2024). Analysis of photodiode and barrier properties of CoPc/n-Ge heterojunction under various illumination wavelengths. Optik. 307. 171811–171811. 4 indexed citations
9.
Rani, Anjeeta, V. Rajagopal Reddy, C. V. R. K. Prasad, & A. Ashok Kumar. (2024). Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer. Journal of Inorganic and Organometallic Polymers and Materials. 34(8). 3880–3892. 4 indexed citations
10.
Kumar, A. Ashok, et al.. (2024). Photovoltaic and Barrier Properties of Au/n-Ge Schottky Junction Modified by Methylene Blue Organic Dye Interlayer. Journal of Inorganic and Organometallic Polymers and Materials. 35(2). 1413–1425. 4 indexed citations
11.
Reddy, V. Rajagopal, et al.. (2023). Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure. Journal of Molecular Structure. 1294. 136490–136490. 9 indexed citations
12.
Kumar, A. Ashok, et al.. (2023). Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications. Materials Science and Engineering B. 300. 117102–117102. 3 indexed citations
13.
Reddy, P.R. Sekhar, V. Janardhanam, Kyu-Hwan Shim, et al.. (2020). Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer. Thin Solid Films. 713. 138343–138343. 16 indexed citations
14.
Kumar, Arvind, K. K. Sharma, Subhash Chand, & A. Ashok Kumar. (2018). Investigation of barrier inhomogeneities in I-V and C-V characteristics of Ni/n-TiO2/p-Si/Al heterostructure in wide temperature range. Superlattices and Microstructures. 122. 304–315. 26 indexed citations
15.
Ghadi, Hemant, et al.. (2015). Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots. IEEE Transactions on Nanotechnology. 14(4). 603–607. 8 indexed citations
16.
Kumar, A. Ashok, et al.. (2013). Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP. AIP conference proceedings. 471–472. 1 indexed citations
17.
Reddy, M. Siva Pratap, A. Ashok Kumar, & V. Rajagopal Reddy. (2011). Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature. Thin Solid Films. 519(11). 3844–3850. 44 indexed citations
18.
Janardhanam, V., A. Ashok Kumar, V. Rajagopal Reddy, & Chel‐Jong Choi. (2010). Study of deep level defect behavior in undoped n-InP (1 0 0) after rapid thermal annealing. Microelectronic Engineering. 88(4). 506–508. 1 indexed citations
19.
Kumar, A. Ashok, et al.. (2008). Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (1 1 1). Current Applied Physics. 9(5). 972–977. 42 indexed citations
20.
Kumar, A. Ashok, Massimo Tallarida, Martin‐Leo Hansmann, U. Starke, & K.M. Horn. (2004). Thin manganese films on Si(111)-(7 × 7): electronic structure and strain in silicide formation. Journal of Physics D Applied Physics. 37(7). 1083–1090. 58 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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