Standout Papers

Investigation of growth processes of ingots of silicon carbide single crystals 1978 2026 1994 2010 414
  1. Investigation of growth processes of ingots of silicon carbide single crystals (1978)
    Yu. M. Tairov, V. F. Tsvetkov Journal of Crystal Growth

Immediate Impact

36 by Nobel laureates 7 from Science/Nature 75 standout
Sub-graph 1 of 21

Citing Papers

Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide
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2 intermediate papers

Works of Yu. M. Tairov being referenced

Investigation of growth processes of ingots of silicon carbide single crystals
1978 Standout
Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase
1976
and 6 more

Author Peers

Author Last Decade Papers Cites
Yu. M. Tairov 823 275 183 48 948
Kazuhito Kamei 590 233 201 52 772
Takeshi Mitani 566 146 241 63 751
Toshihiko Shigematsu 686 126 357 57 978
E. Sakuma 961 159 272 36 1.2k
Jason R. Jenny 833 137 268 31 1.0k
Thomas L. Straubinger 571 173 179 51 765
Takeshi Bessho 497 135 254 48 804
W. Albers 578 112 602 28 849
Edward Sanchez 652 84 105 70 740
M. Berkenblit 474 78 378 37 750

All Works

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2026