Immediate Impact

3 standout
Sub-graph 1 of 2

Citing Papers

Ion-cut lithium niobate on insulator technology: Recent advances and perspectives
2021 Standout
GaN-based power devices: Physics, reliability, and perspectives
2021 Standout
2 intermediate papers

Works of Timothy Boles being referenced

GaN-on-Silicon – Present capabilities and future directions
2018
On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
2013

Author Peers

Author Last Decade Papers Cites
Timothy Boles 99 110 6 50 13 133
Noboru Negoro 191 133 5 64 15 226
Chad A. Stephenson 93 49 2 39 14 139
Sheng Jiang 93 109 49 13 123
Zhicheng Wu 146 98 44 16 181
K. Sakuno 106 54 2 28 14 127
C. S. Chang 77 101 2 25 13 137
Dongping Xiao 204 176 2 45 16 242
F. van Rijs 186 56 7 24 18 204
S. Joblot 82 63 2 31 19 118
A. Erven 64 71 2 49 16 135

All Works

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Rankless by CCL
2026