Standout Papers

Review of displacement damage effects in silicon devices 2003 2026 2010 2018 462
  1. Review of displacement damage effects in silicon devices (2003)
    J. R. Srour, Cheryl J. Marshall et al. IEEE Transactions on Nuclear Science

Immediate Impact

1 by Nobel laureates 4 from Science/Nature 59 standout
Sub-graph 1 of 23

Citing Papers

Synaptic and neural behaviours in a standard silicon transistor
2025 StandoutNature
Insulating electromagnetic-shielding silicone compound enables direct potting electronics
2024 StandoutScience
2 intermediate papers

Works of J. R. Srour being referenced

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices
2006
The multiple-trapping model and hole transport in SiO2
1977

Author Peers

Author Last Decade Papers Cites
J. R. Srour 1651 235 109 241 50 1.8k
Scott R. Messenger 1587 327 131 332 87 1.8k
S. Holland 1521 177 35 281 77 1.8k
N. Richard 1159 364 124 669 133 1.8k
B. Brichard 1290 528 62 292 84 1.8k
C. Marcandella 1835 540 66 322 100 2.2k
Cheryl J. Marshall 1395 117 56 77 67 1.5k
N. S. Saks 2518 306 49 346 79 2.6k
Marc Gaillardin 1958 130 67 107 98 2.1k
Kazuyuki Hirose 1826 382 71 692 119 2.1k
F.W. Sexton 2630 105 174 174 74 2.7k

All Works

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2026