Standout Papers

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown... 1997 2026 2006 2016 601
  1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate (1998)
    Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters
  2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices (1997)
    Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics
  3. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates (1998)
    Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters
  4. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates (1998)
    Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics

Immediate Impact

20 by Nobel laureates 22 from Science/Nature 59 standout
Sub-graph 1 of 22

Citing Papers

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1 intermediate paper

Works of Hitoshi Umemoto being referenced

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 StandoutNobel
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
1997 StandoutNobel

Author Peers

Author Last Decade Papers Cites
Hitoshi Umemoto 1970 1003 467 804 12 2.1k
Kazuyuki Chocho 1847 926 439 758 10 2.0k
Isamu Akasaki Isamu Akasaki 2440 1181 535 1067 17 2.6k
Tokuya Kozaki 2465 1443 524 919 29 2.8k
A. Abare 1954 1092 436 816 44 2.2k
J. Menniger 1576 812 412 1096 26 2.0k
Motokazu Yamada 1362 587 208 1041 13 1.8k
Minho Kim 1851 1121 177 801 35 2.2k
Ronald A. Arif 1503 909 249 696 37 1.8k
M. Kito 1556 780 326 750 33 1.9k
Haruo Sunakawa 1942 761 603 1064 36 2.2k

All Works

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