Immediate Impact
6 from Science/Nature 53 standout
Citing Papers
GaN-based power devices: Physics, reliability, and perspectives
2021 Standout
Van der Waals integration before and beyond two-dimensional materials
2019 StandoutNature
Works of H. Schlötterer being referenced
Indium desorption during MBE growth of strained InGaAs layers
1991
Properties of ESFI MOS transistors due to the floating substrate and the finite volume
1975
Author Peers
| Author | Last Decade | Papers | Cites | |||
|---|---|---|---|---|---|---|
| H. Schlötterer | 362 | 126 | 126 | 14 | 412 | |
| Yoshiaki Matsushita | 398 | 121 | 188 | 20 | 438 | |
| Li-Qun Xia | 296 | 142 | 126 | 21 | 376 | |
| W. M. van de Wijgert | 390 | 122 | 192 | 11 | 435 | |
| B.W. Straughan | 318 | 268 | 182 | 16 | 456 | |
| M. L. Joshi | 221 | 138 | 158 | 21 | 385 | |
| S. Mesters | 304 | 228 | 122 | 22 | 396 | |
| N. Taylor | 375 | 241 | 147 | 20 | 452 | |
| Y. J. van der Meulen | 347 | 182 | 163 | 13 | 446 | |
| G. Hadjisavvas | 237 | 142 | 278 | 17 | 402 | |
| W. P. Allred | 293 | 255 | 144 | 18 | 378 |
All Works
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