Standout Papers

Static-noise margin analysis of MOS SRAM cells 1987 2026 2000 2013 627
  1. Static-noise margin analysis of MOS SRAM cells (1987)
    E. Seevinck, J. Lohstroh et al. IEEE Journal of Solid-State Circuits

Immediate Impact

4 by Nobel laureates 7 from Science/Nature 68 standout
Sub-graph 1 of 23

Citing Papers

The future transistors
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Doping Approaches for Organic Semiconductors
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2 intermediate papers

Works of E. Seevinck being referenced

Static-noise margin analysis of MOS SRAM cells
1987 Standout
Worst-case static noise margin criteria for logic circuits and their mathematical equivalence
1983

Author Peers

Author Last Decade Papers Cites
E. Seevinck 1547 762 112 199 36 1.7k
Ramesh Harjani 1104 470 73 138 80 1.2k
Marcel Pelgrom 1795 944 110 270 27 1.9k
R. Jacob Baker 1151 635 77 125 50 1.4k
Mingoo Seok 1656 578 126 295 82 1.9k
Hamid Mahmoodi 1802 302 75 440 59 1.9k
G. Torelli 994 479 186 166 88 1.2k
R.L. Geiger 1158 1093 203 154 66 1.5k
Neil Weste 1409 370 181 533 28 1.7k
David Harris 1192 267 134 445 20 1.5k
Tanay Karnik 1759 506 135 436 43 1.9k

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