Immediate Impact

1 by Nobel laureates 56 standout
Sub-graph 1 of 24

Citing Papers

Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review
2024 Standout
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Standout
2 intermediate papers

Works of Claude Ahyi being referenced

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
2013
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
2007

Author Peers

Author Last Decade Papers Cites
Claude Ahyi 242 261 128 134 13 375
Elías Muñoz 194 179 46 191 18 371
Hyeongnam Kim 242 258 124 105 17 372
H.H. Yao 219 188 177 100 15 364
Per Olof Holtz 152 131 144 75 22 338
Greeshma Chandan 214 191 134 203 17 420
Chunyan Jin 73 229 109 114 15 362
Haixu Peng 133 158 71 140 12 443
S. Sankar 139 124 350 132 13 446
Sheng-Wen Wang 147 177 35 103 12 366
K. Mi 124 233 218 134 9 403

All Works

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2026