Bongim Jun

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors