A.O. Adan

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Ultra-wide bandgap semiconductor Ga2O3 power diodes

The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability