High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
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doi.org/10.1063/1.1843286 →Countries where authors are citing High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
This map shows the geographic impact of High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer more than expected).
Fields of papers citing High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
This network shows the impact of High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.
This paper is also available at doi.org/10.1063/1.1843286.